BSZ086P03NS3EG Infineon MOSFET (P-Channel) (Other) In Stock
BSZ086P03NS3EG is a 03NS 40A resistor by Infineon. Key specs: 03NS, 40A, -30V. From quote-based pricing, in stock with worldwide shipping for production sourcing for production BOM sourcing.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- BSZ086P03NS3EG Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BSZ086P03NS3EG?
- Resistor function with 03NS, 40A, -30V
- 8-pin package footprint context for BOM matching and assembly review
- 03NS 40A parameter context for design-in validation
- Traceable Infineon manufacturer data with datasheet-backed sourcing details
What is BSZ086P03NS3EG used for?
Used in industrial electronics, embedded hardware, repair builds, and production BOM sourcing where 03NS, 40A, -30V must match the approved design envelope. It also fits OEM repair, alternate sourcing, and production BOM planning that require traceable Infineon supply.
What are the specifications of BSZ086P03NS3EG?
| Pbfree Code | Yes |
| YTEOL | 5 |
| Additional Feature | ESD PROTECTED |
| Avalanche Energy Rating (Eas) | 105mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 13.5A |
| Drain-source On Resistance-Max | 0.0134Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | S-PDSO-N8 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 69W |
| Pulsed Drain Current-Max (IDM) | 160A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Austria, Malaysia |
Where can I find the BSZ086P03NS3EG datasheet?
BSZ086P03NS3EG Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for BSZ086P03NS3EG?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How should engineers evaluate this MOSFET for load switching margins?
Review the 30 V breakdown rating, 13.5 A maximum drain current, and 0.0134 ohm on-resistance against the expected current peaks and thermal headroom in the target design.
Which robustness details are useful during AVL qualification?
The part lists ESD protection, a built-in diode, and a 105 mJ avalanche energy rating, so qualification teams can compare it against transient stress requirements.
How does the package information affect PCB sourcing reviews?
Use the 8 pins and drain case connection as matching checks when comparing alternates, especially for layout compatibility and second-source approval workflows.
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About Infineon
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