SCTWA60N120G2AG STMicroelectronics MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics SCTWA60N120G2AG is an automotive-grade silicon carbide N-channel power MOSFET rated at 1200 V and 52 A with a typical on-resistance of 45 mΩ in the HiP247 long-lead package. Qualified to AEC-Q101 for harsh automotive environments. Available from global distributors with volume pricing.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SCTWA60N120G2AG Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SCTWA60N120G2AG?
- 1200 V drain-source breakdown voltage enables direct use in 800 V EV traction inverter stages
- Typical RDS(on) of 45 mΩ at 52 A reduces conduction losses versus comparable silicon devices
- AEC-Q101 automotive-qualified SiC MOSFET for reliable operation in harsh thermal environments
- HiP247 long-lead package with drain-tab connection simplifies heatsinking in high-power modules
- Integrated body diode with low reverse-recovery charge supports hard-switching and bridgeless PFC topologies
What is SCTWA60N120G2AG used for?
The SCTWA60N120G2AG targets high-power automotive traction inverters, on-board chargers, and DC-DC converters in 400 V and 800 V EV platforms where 1200 V blocking capability and low 45 mΩ on-resistance improve system efficiency. Its AEC-Q101 qualification makes it equally suited to industrial motor drives, solar string inverters, and 3-phase UPS systems operating from high DC bus voltages. The HiP247 package provides a straightforward drop-in upgrade path from silicon IGBTs in existing power stage designs.
What are the specifications of SCTWA60N120G2AG?
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 52A |
| Drain-source On Resistance-Max | 0.058Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 18pF |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 388W |
| Pulsed Drain Current-Max (IDM) | 156A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the SCTWA60N120G2AG datasheet?
SCTWA60N120G2AG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for SCTWA60N120G2AG?
Compatible alternatives and drop-in replacements for SCTWA60N120G2AG:
Power Field-Effect Transistor, 52A I(D), 1200V, 0.058ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Frequently Asked Questions
What voltage and current ratings does the SCTWA60N120G2AG support for EV traction applications?
The SCTWA60N120G2AG is rated for 1200 V drain-source breakdown voltage and 52 A continuous drain current, with a maximum RDS(on) of 58 mΩ, making it directly applicable to 400 V and 800 V automotive traction inverter stages without additional voltage margin stacking.
How does the SiC MOSFET technology in SCTWA60N120G2AG compare to silicon IGBTs at 1200 V?
Silicon carbide MOSFETs like the SCTWA60N120G2AG switch at much higher frequencies than equivalent 1200 V silicon IGBTs, typically enabling switching frequencies above 20 kHz while keeping switching losses low. The integrated body diode also eliminates the need for an external freewheeling diode, reducing component count.
Is the SCTWA60N120G2AG qualified for automotive use, and what standard does it meet?
Yes, it is AEC-Q101 qualified for automotive applications, ensuring it has passed rigorous reliability screening including high-temperature gate bias, high-temperature reverse bias, and thermal shock testing required for safety-critical vehicle power electronics.
What package does SCTWA60N120G2AG use, and how does the drain connection affect PCB or module design?
The part is housed in an HiP247 long-lead package with the drain connected to the exposed metal tab, which simplifies thermal management by allowing direct attachment to a heatsink or cold plate. The 3 through-hole leads carry gate, source, and Kelvin-source connections to the PCB.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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