SPD04P10PL G Infineon MOSFET (P-Channel) (Other) In Stock
Infineon SPD04P10PL G is a P-channel power MOSFET rated at -100 V drain-to-source voltage and 4.2 A continuous drain current in a DPAK-2 surface mount package. Features low on-state resistance and fast switching for efficient load switching and motor drive applications. Available from stock with worldwide shipping for power management designs.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SPD04P10PL G Datasheet PDF
- Category
- MOSFET (P-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-channel MOSFET with -100 V VDS and 4.2 A ID rating enabling robust high-side switching in 12 V to 100 V power management circuits
- Low RDS(on) in DPAK-2 surface mount package providing efficient thermal dissipation for compact power switch designs
- OptiMOS technology delivering fast switching transitions and reduced gate charge for improved efficiency in DC-DC converter and load switch applications
Applications
The SPD04P10PL G is designed for high-side load switching, reverse battery protection, and power distribution circuits in automotive and industrial equipment operating up to -100 V. Its 4.2 A current capability and DPAK-2 package suit motor control pre-drivers, electronic circuit breakers, and solar energy management systems. Designers also deploy this device in consumer electronics power management, hot-swap controllers, and battery charger protection circuits requiring a reliable P-channel MOSFET.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the Infineon SPD04P10PL G P-channel MOSFET?
The SPD04P10PL G is rated for a maximum drain-to-source voltage (VDS) of -100 V and a continuous drain current (ID) of 4.2 A. These ratings make it suitable for high-side switching applications in 12 V to 48 V power management circuits requiring a P-channel device with adequate voltage margin.
Which package does the SPD04P10PL G use and what are the thermal advantages for power switching designs?
The SPD04P10PL G is housed in a DPAK-2 (TO-252) surface mount package, which provides an exposed thermal pad for efficient heat transfer to the PCB copper plane. This enables adequate power dissipation for continuous 4.2 A operation, typically achieving junction-to-case thermal resistance suitable for designs without an external heat sink in low-to-medium power applications.
How does the SPD04P10PL G perform in reverse battery protection circuits for automotive designs?
As a P-channel MOSFET with -100 V VDS, the SPD04P10PL G is well suited for reverse battery protection in 12 V and 24 V automotive systems. The device blocks reverse current when connected with its source to the positive rail, protecting downstream circuits from damage caused by reversed battery connections without the 0.7 V forward drop of a diode-based solution.
When should a designer select SPD04P10PL G over an N-channel MOSFET for load switching?
Designers choose the SPD04P10PL G P-channel device when a high-side switch is needed without a gate drive voltage higher than the supply rail. At supply voltages up to -100 V, the P-channel configuration allows simple gate drive directly from a microcontroller or logic signal referenced to the positive supply, eliminating the bootstrap or charge pump circuits that N-channel high-side drivers require.
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