STRH40P10HY1 STMicroelectronics MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
STRH40P10HY1 is a radiation-hardened 100 V, 34 A P-channel power MOSFET from STMicroelectronics in a TO-254AA package. Features 75 mOhm on-resistance, 1133 mJ avalanche energy rating, and built-in body diode for space-grade power switching. Available worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH40P10HY1 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened design ensures reliable switching in space and satellite applications exposed to total ionizing dose environments
- 34 A continuous drain current with 75 mOhm maximum Rds(on) minimizes conduction losses in high-current power paths
- 1133 mJ avalanche energy rating (Eas) provides exceptional robustness against inductive switching transients
- Built-in body diode eliminates external freewheeling diode in synchronous rectification and H-bridge topologies
Applications
The STRH40P10HY1 is designed for high-reliability power management in satellites, spacecraft, and radiation-environment electronics where MOSFET gate oxide degradation from ionizing radiation must be tightly controlled. Its 100 V, 34 A rating makes it suitable for high-side P-channel switches in battery management, solar array regulators, and load-switching circuits on space platforms. Military and avionics power conditioning systems also use this device where long-term reliability under radiation exposure is mandated.
Specifications
| YTEOL | 5.1 |
| Avalanche Energy Rating (Eas) | 1133mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 34A |
| Drain-source On Resistance-Max | 0.075Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 306pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 176W |
| Pulsed Drain Current-Max (IDM) | 136A |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 205ns |
| Turn-on Time-Max (ton) | 76ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source on-resistance of the STRH40P10HY1, and how does it affect conduction loss at 34 A?
The STRH40P10HY1 specifies a maximum Rds(on) of 75 mOhm. At 34 A continuous drain current, conduction power dissipation equals I²×R = 34² × 0.075 = approximately 87 W, requiring adequate heatsinking via the TO-254AA package to maintain junction temperature within rated limits during sustained high-current switching.
What does the 1133 mJ avalanche energy rating mean for inductive load switching applications?
An avalanche energy (Eas) of 1133 mJ means the STRH40P10HY1 can absorb that energy in a single unclamped inductive switching event without device failure. For a motor-drive application switching a 10 mH inductor at 34 A, the stored energy is 0.5 × 10 mH × 34² = approximately 5.8 J per phase — exceeding single-pulse Eas, so designers must use external clamping or snubber networks in high-energy inductive loads.
How does radiation hardening affect the gate threshold voltage stability of the STRH40P10HY1 over a satellite mission lifetime?
Standard MOSFET gate oxides accumulate trapped charge under ionizing radiation, shifting gate threshold voltage by 0.5 V to several volts over a 100 krad(Si) mission dose. The STRH40P10HY1's rad-hard process minimizes this shift, maintaining stable switching thresholds across typical GEO satellite total ionizing dose levels, ensuring predictable on/off control without requiring gate drive compensation over the mission lifetime.
Can the STRH40P10HY1 be used as a high-side switch in a 28 V satellite bus, and what gate drive voltage is needed?
Yes. The STRH40P10HY1 with a 100 V Vds(max) rating is well within the 28 V satellite bus standard. As a P-channel MOSFET, it requires the gate pulled below the source by at least the threshold voltage (typically -2 V to -4 V) to turn on. A gate drive to ground (0 V) from a 28 V source rail gives Vgs of -28 V, comfortably driving the device fully on and achieving the specified 75 mOhm Rds(on).
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