AON7405 Alpha & Omega Semiconductors MOSFET (P-Channel) (Other) In Stock

Alpha & Omega Semiconductors AON7405 is a P-Channel MOSFET in DFN-8 package with 30 V breakdown voltage, 50 A maximum drain current, and ultra-low 6.2 mΩ on-resistance. It features a single configuration with built-in diode and 97 mJ avalanche energy rating, ideal for high-current power switching and load management applications.

OBSOLETEMOSFET (P-Channel)Verified Jun 2026
Package / Visual Reference
AON7405Other
Quick Facts
Manufacturer
Alpha & Omega Semiconductors
Package
Other
Pin Count
9
Lifecycle
OBSOLETE
Category
MOSFET (P-Channel)
Price
From $0.4590(MOQ 405)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low 6.2 mΩ drain-source on-resistance for minimal conduction losses at 50 A
  • 30 V breakdown voltage with 97 mJ avalanche energy rating for robust switching transients
  • Single P-Channel configuration with built-in body diode in compact DFN-8 package
  • 520 pF maximum feedback capacitance (Crss) enabling fast switching in power management circuits

Applications

The AON7405 is optimized for high-current load switching, battery protection circuits, and DC-DC converter applications where low conduction losses are critical. Its 50 A drain current and 6.2 mΩ on-resistance reduce thermal dissipation in portable device power rails and motor drive pre-driver stages. The compact DFN-8 footprint allows dense PCB integration in space-constrained power management designs.

Specifications

YTEOL0
Avalanche Energy Rating (Eas)97mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30V
Drain Current-Max (ID)50A
Drain-source On Resistance-Max0.0062Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)520pF
JESD-30 CodeS-PDSO-N8
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleSMALL OUTLINE
Polarity/Channel TypeP-CHANNEL
Power Dissipation Ambient-Max6.25W
Power Dissipation-Max (Abs)83W
Pulsed Drain Current-Max (IDM)210A
Surface MountYES
Terminal FormNO LEAD
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)182ns
Turn-on Time-Max (ton)19.5ns
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
HTS Code8541.29.00.95

Datasheet

AON7405 Datasheet Download

Official datasheet from Alpha & Omega Semiconductors

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for AON7405:

Frequently Asked Questions

What is the drain-source on-resistance of the AON7405, and how does it benefit high-current switching designs?

The AON7405 has a maximum drain-source on-resistance of 6.2 mΩ, which minimizes conduction losses even at 50 A continuous drain current. This ultra-low Rds(on) makes it suitable for battery protection and DC-DC converter applications where thermal efficiency is critical.

How does the 97 mJ avalanche energy rating of the AON7405 protect a power circuit during inductive switching events?

The AON7405's 97 mJ avalanche energy rating (Eas) means it can safely absorb inductive flyback energy during unclamped switching events without device failure. This built-in robustness protects motor drive circuits and relay driver stages from voltage spikes exceeding the 30 V drain-source breakdown threshold.

For a battery management system requiring load switching, what current and voltage limits does the AON7405 support?

The AON7405 supports up to 50 A maximum drain current and 30 V minimum drain-source breakdown voltage, making it appropriate for single-cell to multi-cell lithium battery packs in the 3 V to 24 V operating range. The built-in body diode also provides a reverse current path for bidirectional protection stages.

How does the DFN-8 package of the AON7405 help in a thermally constrained PCB layout compared to larger through-hole packages?

The DFN-8 package exposes a large drain pad on the bottom, enabling direct thermal conduction to the PCB copper plane and reducing junction-to-board thermal resistance. This allows the AON7405 to sustain 50 A switching currents with less heatsinking area than TO-220 or D2PAK packages occupying several times more board space.

When is the AON7405 a better fit than a discrete N-Channel MOSFET plus charge pump for a P-Channel high-side switch?

The AON7405 is a better fit when the supply rail is already negative-gate switchable, eliminating the charge pump circuit needed to drive an N-Channel MOSFET above the 30 V rail. For load switches where gate drive comes from a logic-level P-Channel controller, the AON7405's P-Channel configuration reduces component count and design complexity at 50 A output levels.

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About Alpha & Omega Semiconductors

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More from Alpha & Omega Semiconductors

AvailabilityIn Stock
Reference Price (USD)
From $0.4590
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
405+$0.4963$201.00
525+$0.4777$250.79
655+$0.4590$300.65
pcs
Unit price: $0.4963 · Total: $201.00

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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Thomas Mueller
Hardware Lead, SensorTech GmbH, Germany