STRH40P10HYT STMicroelectronics MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH40P10HYT is a radiation-hardened P-channel power MOSFET rated at 100V drain-source voltage and 34A drain current with 75 mΩ on-resistance in a TO-254AA package. It delivers robust avalanche energy handling of 1133 mJ for space and high-reliability power switching applications. Available in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH40P10HYT Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened design supporting satellite and space-grade power switching with 100 V breakdown and 34 A continuous drain current
- Ultra-low 75 mΩ drain-source on-resistance minimizing conduction losses at high current loads in compact TO-254AA vertical package
- 1133 mJ avalanche energy rating providing exceptional unclamped inductive switching (UIS) ruggedness for robust power electronics reliability
Applications
The STRH40P10HYT is designed for space-grade and high-reliability power management circuits where radiation hardness is mandatory, such as satellite power buses, launch vehicle electronics, and military avionics power converters. Its 100V/34A rating and 1133 mJ avalanche energy capability support inductive load switching in point-of-load regulators and battery protection circuits operating in harsh radiation environments. Defense and aerospace power supply designers use this P-channel MOSFET in high-side switch configurations for redundant power distribution and load protection on spacecraft power buses.
Specifications
| YTEOL | 5.1 |
| Avalanche Energy Rating (Eas) | 1133mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 34A |
| Drain-source On Resistance-Max | 0.075Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 306pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 176W |
| Pulsed Drain Current-Max (IDM) | 136A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 100K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 205ns |
| Turn-on Time-Max (ton) | 76ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What radiation hardness level does the STRH40P10HYT provide for satellite power bus applications?
The STRH40P10HYT is a radiation-hardened (rad-hard) P-channel MOSFET rated for use in space environments, with a 100V breakdown voltage and 34A drain current capacity ensuring stable switching in satellite power bus circuits exposed to total ionizing dose and single-event effects. Its TO-254AA package suits board-level integration in spacecraft power control modules.
How does the 1133 mJ avalanche energy rating of the STRH40P10HYT benefit inductive load switching circuits?
An avalanche energy rating of 1133 mJ means the STRH40P10HYT can safely absorb large inductive kickback energy pulses during unclamped inductive switching events, preventing device failure in motor drivers, solenoid controllers, and relay drive circuits. This high UIS rating allows designers to reduce snubber component size or eliminate them in space-constrained high-reliability power assemblies.
For a satellite high-side power switch at 28V and 20A, how does the STRH40P10HYT compare to general-purpose alternatives?
With a 100V breakdown headroom well above the 28V spacecraft bus, 34A current rating exceeding the 20A load, and radiation-hardened construction, the STRH40P10HYT provides the mandatory reliability margins that commercial-grade P-channel MOSFETs cannot guarantee in orbit. Its 75 mΩ on-resistance limits heat dissipation to approximately 30 mW at 20A, reducing thermal management complexity in sealed spacecraft enclosures.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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