SPD18P06PGBTMA1 Infineon MOSFET (P-Channel) (Other) In Stock

The SPD18P06PGBTMA1 is a P-channel power MOSFET from Infineon rated at -60 V drain-source breakdown voltage and -18.6 A continuous drain current, featuring a low 0.13 Ω on-resistance and 150 mJ avalanche energy rating in a DPAK-2 surface mount package. It includes a built-in body diode and avalanche protection for robust load-switching and motor-drive designs. Available worldwide for high-volume production.

END OF LIFEMOSFET (P-Channel)Verified Jun 2026
Package / Visual Reference
SPD18P06PGBTMA1Other
Quick Facts
Manufacturer
Infineon
Package
Other
Pin Count
4
Lifecycle
END OF LIFE
Category
MOSFET (P-Channel)
Temp Range
?°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Avalanche-rated P-channel MOSFET with 150 mJ avalanche energy (Eas) providing robust protection against inductive switching transients in load-switch and motor-control circuits
  • -60 V drain-source breakdown voltage and -18.6 A continuous drain current enabling high-power load switching in automotive and industrial 12 V to 48 V systems
  • Low 0.13 Ω drain-source on-resistance (RDS(on)) minimizing conduction losses and reducing heat generation in high-current switching paths
  • Built-in body diode configuration in compact DPAK-2 surface mount package simplifying PCB layout for synchronous switching and half-bridge topologies

Applications

The SPD18P06PGBTMA1 is suited for high-side load switching in 12 V automotive systems, battery protection circuits, and motor-control half-bridge stages where P-channel FETs simplify gate drive at negative supply rails. Its 150 mJ avalanche rating protects against inductive energy spikes in relay and solenoid drive applications where the load has significant stored energy. The DPAK-2 package and low RDS(on) of 0.13 Ω make it a strong choice for power tool battery management and DC motor speed control boards.

Specifications

Pbfree CodeNo
Factory Lead Time10Weeks
YTEOL0
Additional FeatureAVALANCHE RATED
Avalanche Energy Rating (Eas)150mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60V
Drain Current-Max (ID)18.6A
Drain-source On Resistance-Max0.13Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Polarity/Channel TypeP-CHANNEL
Pulsed Drain Current-Max (IDM)74.4A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishTin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
HTS Code8541.29.00.95

Datasheet

SPD18P06PGBTMA1 Datasheet Download

Official datasheet from Infineon

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What voltage and current ratings make SPD18P06PGBTMA1 suitable for 12 V automotive load switching?

The SPD18P06PGBTMA1 is rated at -60 V drain-source breakdown voltage and -18.6 A continuous drain current, giving more than 4x margin over a 12 V rail. Its 0.13 Ω RDS(on) keeps conduction losses under 45 mW per ampere of load current, making it an efficient high-side switch for automotive relay replacement and battery disconnect circuits.

How does the 150 mJ avalanche energy rating benefit inductive load applications?

When switching inductive loads such as motors, solenoids, or relays, the stored magnetic energy must be dissipated when the MOSFET turns off. The SPD18P06PGBTMA1's 150 mJ single-pulse avalanche energy (Eas) allows it to absorb these transients internally without needing an external snubber or TVS diode in many designs, reducing component count and PCB area.

Does SPD18P06PGBTMA1 include a body diode, and how does it affect synchronous rectification designs?

Yes, the SPD18P06PGBTMA1 is specified as a single P-channel MOSFET with a built-in body diode. In synchronous rectification or half-bridge topologies, this body diode conducts during dead-time intervals between gate pulses, preventing shoot-through and allowing the device to be used directly in complementary switching pairs without an additional freewheeling diode.

What PCB thermal considerations apply when running SPD18P06PGBTMA1 at near-rated drain current?

At -18.6 A drain current with RDS(on) of 0.13 Ω, the device dissipates approximately 45 W in conduction losses, which approaches the DPAK-2 package's thermal limits. Designers must ensure the PCB copper area beneath the DPAK-2 thermal pad covers at least 1 cm² and use thermal vias to the ground plane to keep junction temperature below the maximum rated value, typically 150°C.

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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

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Marco Rossi
CTO, AutoDrive Systems, Italy