SPD18P06PGBTMA1 Infineon MOSFET (P-Channel) (Other) In Stock
The SPD18P06PGBTMA1 is a P-channel power MOSFET from Infineon rated at -60 V drain-source breakdown voltage and -18.6 A continuous drain current, featuring a low 0.13 Ω on-resistance and 150 mJ avalanche energy rating in a DPAK-2 surface mount package. It includes a built-in body diode and avalanche protection for robust load-switching and motor-drive designs. Available worldwide for high-volume production.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 4
- Lifecycle
- END OF LIFE
- Datasheet
- SPD18P06PGBTMA1 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Avalanche-rated P-channel MOSFET with 150 mJ avalanche energy (Eas) providing robust protection against inductive switching transients in load-switch and motor-control circuits
- -60 V drain-source breakdown voltage and -18.6 A continuous drain current enabling high-power load switching in automotive and industrial 12 V to 48 V systems
- Low 0.13 Ω drain-source on-resistance (RDS(on)) minimizing conduction losses and reducing heat generation in high-current switching paths
- Built-in body diode configuration in compact DPAK-2 surface mount package simplifying PCB layout for synchronous switching and half-bridge topologies
Applications
The SPD18P06PGBTMA1 is suited for high-side load switching in 12 V automotive systems, battery protection circuits, and motor-control half-bridge stages where P-channel FETs simplify gate drive at negative supply rails. Its 150 mJ avalanche rating protects against inductive energy spikes in relay and solenoid drive applications where the load has significant stored energy. The DPAK-2 package and low RDS(on) of 0.13 Ω make it a strong choice for power tool battery management and DC motor speed control boards.
Specifications
| Pbfree Code | No |
| Factory Lead Time | 10Weeks |
| YTEOL | 0 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 150mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 18.6A |
| Drain-source On Resistance-Max | 0.13Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 74.4A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage and current ratings make SPD18P06PGBTMA1 suitable for 12 V automotive load switching?
The SPD18P06PGBTMA1 is rated at -60 V drain-source breakdown voltage and -18.6 A continuous drain current, giving more than 4x margin over a 12 V rail. Its 0.13 Ω RDS(on) keeps conduction losses under 45 mW per ampere of load current, making it an efficient high-side switch for automotive relay replacement and battery disconnect circuits.
How does the 150 mJ avalanche energy rating benefit inductive load applications?
When switching inductive loads such as motors, solenoids, or relays, the stored magnetic energy must be dissipated when the MOSFET turns off. The SPD18P06PGBTMA1's 150 mJ single-pulse avalanche energy (Eas) allows it to absorb these transients internally without needing an external snubber or TVS diode in many designs, reducing component count and PCB area.
Does SPD18P06PGBTMA1 include a body diode, and how does it affect synchronous rectification designs?
Yes, the SPD18P06PGBTMA1 is specified as a single P-channel MOSFET with a built-in body diode. In synchronous rectification or half-bridge topologies, this body diode conducts during dead-time intervals between gate pulses, preventing shoot-through and allowing the device to be used directly in complementary switching pairs without an additional freewheeling diode.
What PCB thermal considerations apply when running SPD18P06PGBTMA1 at near-rated drain current?
At -18.6 A drain current with RDS(on) of 0.13 Ω, the device dissipates approximately 45 W in conduction losses, which approaches the DPAK-2 package's thermal limits. Designers must ensure the PCB copper area beneath the DPAK-2 thermal pad covers at least 1 cm² and use thermal vias to the ground plane to keep junction temperature below the maximum rated value, typically 150°C.
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