MOSFET (N-Channel)

ROHS COMPLIANT, TO-262, I2PAK-3

N-channel 300 V, 35 mOhm, 60 A STripFET II Power MOSFET in a TO-247 package

STMicroelectronics STP2NA60 is a SEARAY high-speed board-to-board array connector. It provides 3 positions on a .050 in pitch open-pin-field terminal. From inquiry pricing, request current stock for worldwide shipping.

N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Automotive-grade N-channel 40 V, 0.9 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

N-channel 75 V, 0.0095 Ohm typ., 80 A STripFET(TM) II Power MOSFET in D2PAK package

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D²PAK package

N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH Power MOSFET in an IPAK package

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package

N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220 package

N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5 Power MOSFET in a TO-247 package

Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an H2PAK-2 package

STMicroelectronics STP410N4F7AG is an automotive-grade N-channel power MOSFET rated 40 V, 180 A with 0.8 mΩ typical RDS(on) in STripFET F7 technology. AEC-Q101 qualified for harsh environments in a TO-220AB package. Available from stock with worldwide shipping.

N-channel 600 V, 200 mΩ typ., 15 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

N-channel 650 V, 0.067 Ohm typ., 35 A, MDmesh M5 Power MOSFET in TO-3PF package

N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D²PAK, TO-220FP, I²PAKFP and TO-220 packages

N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

MOSFET PTD HIGH VOLTAGE

N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO247-4 package

Use the download button to access the STQ1HN60K3-AP schematic symbol, PCB footprint, and 3D model.

N-channel 100 V, 0.038 Ω typ., 25 A STripFET™ II Power MOSFET in a DPAK package

N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK

The TN0110N3-G-P002 is a single N-channel MOSFET from Microchip with 100 V drain-source breakdown voltage, 350 mA maximum drain current, and 3 Ω maximum RDS(on). It features a built-in body diode in a through-hole TO-92-3 package for ease of prototyping and low-volume production. Available in stock with worldwide shipping.

VN2460N3-G is a 600 V N-channel MOSFET from Microchip with 25 Ω maximum R_DS(on) and 160 mA continuous drain current. It features a built-in protection diode in a compact TO-92 3-pin through-hole package for low-current high-voltage switching. From $0.60 in stock with worldwide shipping.

TN0106N3-G is a logic-level compatible N-channel MOSFET from Microchip Technology rated at 60 V minimum drain-source breakdown, 350 mA drain current, and 3 Ω on-resistance in a 3-pin TO-92 through-hole package. It features a built-in diode and low 8 pF feedback capacitance for reliable switching. Available from stock with worldwide shipping.

The VN2106N3-G is a Microchip N-channel enhancement-mode MOSFET designed for low-voltage switching applications, featuring a drain-source voltage rating of 60 V and a continuous drain current up to 200 mA in a SOT-23 3-pin package. It is suitable for general-purpose logic-level switching and load control.

Microchip TN2425N8-G is a logic-level compatible N-channel MOSFET rated at 250 V breakdown voltage and 3.5 Ω on-resistance in a compact SOT-89-3 package. It supports a maximum drain current of 0.48 A and features a built-in diode for protection. Available from stock worldwide with fast shipping.

N-Channel 60 V 300mA (Tj) 740mW (Tc) Through Hole TO-92-3, 2.5Ohm, 50pF @ 25V , -55°C ~ 150°C (TJ)

Microchip VP3203N3-G is an N-channel enhancement-mode MOSFET designed for power switching and motor drive applications. Offers low on-resistance and fast switching for efficient energy conversion. Available from stock worldwide.

The STP10N80K5 is an STMicroelectronics MDmesh K5 N-channel power MOSFET rated at 800 V drain-source breakdown and 9 A continuous drain current with 0.470 Ω typical on-resistance. It integrates a built-in body diode and features 130 mJ avalanche energy rating in a through-hole TO-220 package. Available from stock with worldwide shipping.

N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package

N-channel 650 V, 0.60 Ω typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP package

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package

N-channel 650 V, 320 mΩ typ., 11 A MDmesh M2 Power MOSFET in a DPAK package

N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

Use the download button to access the STFW2N105K5 schematic symbol, PCB footprint, and 3D model.

N-channel 650 V, 0.91 Ohm typ., 5 A MDmesh M6 Power MOSFET in a DPAK package

N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long leads package

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package

STF8N60DM2 is an N-channel MDmesh DM2 power MOSFET rated at 600 V and 8 A with 550 mΩ typical drain-source on-resistance. It features isolated TO-220FP packaging and 430 mJ avalanche energy rating for rugged switching applications.

N-channel 40 V, 1.8 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package

N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package

N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP wide crepage package

TO-263, D2PAK-3/2

Use the download button to access the STW12N170K5 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STW18N65M5 schematic symbol, PCB footprint, and 3D model.

Automotive N-channel 55 V, 6.5 mΩ typ., 80 A STripFET II Power MOSFETs in D²PAK and TO-220 packages

STMicroelectronics STRH100N10HYT is a radiation-hardened N-channel Power MOSFET rated at 100 V and 48 A, featuring ultra-low 35 mΩ on-resistance and 954 mJ avalanche energy rating. Designed for space and high-reliability applications in TO-254AA package. From $12.50 in stock worldwide shipping.

Automotive-grade N-channel 1200 V, 0.62 Ω typ., 12 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package

N-channel 600 V, 70 mΩ typ., 36 A, MDmesh™ M6 Power MOSFET in a TO‑LL HV package