TN0110N3-G-P002 Microchip MOSFET (N-Channel) (Other) In Stock
The TN0110N3-G-P002 is a single N-channel MOSFET from Microchip with 100 V drain-source breakdown voltage, 350 mA maximum drain current, and 3 Ω maximum RDS(on). It features a built-in body diode in a through-hole TO-92-3 package for ease of prototyping and low-volume production. Available in stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TN0110N3-G-P002 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6450(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TN0110N3-G-P002?
- 100 V minimum drain-source breakdown voltage with 350 mA continuous drain current enabling safe low-power switching in 24 V to 48 V industrial control circuits
- 3 Ω maximum RDS(on) with integrated built-in body diode simplifying gate-drive design in small signal switching and load switch applications
- Through-hole TO-92-3 package facilitating hand-soldering, prototyping, and low-volume production without specialized SMT equipment
What is TN0110N3-G-P002 used for?
The TN0110N3-G-P002 is suited for small-signal switching, relay driver circuits, and low-side load switches in industrial control panels, lighting dimmers, and battery-powered portable devices operating on 12 V to 48 V rails. Its 350 mA drain current and 3 Ω RDS(on) make it appropriate for driving indicator LEDs, small solenoids, and logic-level signal routing where conduction losses must be weighed against switching speed. The TO-92-3 package is ideal for through-hole educational kits, prototyping boards, and retrofit designs where PCB footprints favor leaded components.
What are the specifications of TN0110N3-G-P002?
| Pbfree Code | Yes |
| Manufacturer Package Code | TO-92-3 |
| Reach Compliance Code | Compliant |
| Factory Lead Time | 7Weeks |
| YTEOL | 9 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 0.35A |
| Drain-source On Resistance-Max | 3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 1W |
| Power Dissipation-Max (Abs) | 1W |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Where can I find the TN0110N3-G-P002 datasheet?
TN0110N3-G-P002 Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for TN0110N3-G-P002?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and voltage rating of TN0110N3-G-P002 for a 24 V relay driver circuit?
TN0110N3-G-P002 handles up to 350 mA continuous drain current with a 100 V minimum drain-source breakdown voltage, providing a comfortable 4× voltage margin when driving a 24 V relay coil. At 350 mA through the 3 Ω maximum RDS(on), the device dissipates up to 370 mW in the worst case, requiring a small heatsink clip on the TO-92-3 package for sustained operation above 25°C ambient.
How does the built-in body diode of TN0110N3-G-P002 benefit relay and inductive load switching designs?
The integrated body diode in TN0110N3-G-P002 provides a free-wheeling path for inductive kickback energy when the gate turns off, eliminating the need for an external flyback diode across relay coils or motor windings drawing up to 350 mA. This reduces BOM cost by 1 component and prevents the drain voltage from exceeding the 100 V breakdown rating during turn-off transients, protecting both the MOSFET and adjacent logic circuitry in 24 V and 48 V industrial switching designs.
When is TN0110N3-G-P002 in a TO-92-3 package a practical alternative to an SMD MOSFET for a prototype load switch?
TN0110N3-G-P002 is preferred during prototyping or low-volume production runs of fewer than 500 units where hand-soldering TO-92-3 leads is faster than setting up SMT stencil printing. With 100 V / 350 mA ratings, it fits circuits controlled by 3.3 V or 5 V logic gates, since the gate threshold is typically 0.8 V to 1.5 V for small-signal N-channel MOSFETs. Switching up to 20 kHz low-current loads such as 10 mA LED strings or 100 mA solenoids is well within its capability without thermal management concerns.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About Microchip
Microchip is a leading electronic component manufacturer. FindMyChip sources Microchip ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from Microchip
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3600 | $1.36 |
| 25+ | $0.8900 | $22.25 |
| 100+ | $0.8000 | $80.00 |
| 500+ | $0.7400 | $370.00 |
| 1500+ | $0.6590 | $988.50 |
| 2000+ | $0.6450 | $1290.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Response time is incredible — usually under 4 hours. They understand that production lines can't wait.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)