TN0110N3-G-P002 Microchip MOSFET (N-Channel) (Other) In Stock
The TN0110N3-G-P002 is a single N-channel MOSFET from Microchip with 100 V drain-source breakdown voltage, 350 mA maximum drain current, and 3 Ω maximum RDS(on). It features a built-in body diode in a through-hole TO-92-3 package for ease of prototyping and low-volume production. Available in stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TN0110N3-G-P002 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 100 V minimum drain-source breakdown voltage with 350 mA continuous drain current enabling safe low-power switching in 24 V to 48 V industrial control circuits
- 3 Ω maximum RDS(on) with integrated built-in body diode simplifying gate-drive design in small signal switching and load switch applications
- Through-hole TO-92-3 package facilitating hand-soldering, prototyping, and low-volume production without specialized SMT equipment
Applications
The TN0110N3-G-P002 is suited for small-signal switching, relay driver circuits, and low-side load switches in industrial control panels, lighting dimmers, and battery-powered portable devices operating on 12 V to 48 V rails. Its 350 mA drain current and 3 Ω RDS(on) make it appropriate for driving indicator LEDs, small solenoids, and logic-level signal routing where conduction losses must be weighed against switching speed. The TO-92-3 package is ideal for through-hole educational kits, prototyping boards, and retrofit designs where PCB footprints favor leaded components.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | TO-92-3 |
| Reach Compliance Code | Compliant |
| Factory Lead Time | 7Weeks |
| YTEOL | 9 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 0.35A |
| Drain-source On Resistance-Max | 3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 1W |
| Power Dissipation-Max (Abs) | 1W |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and voltage rating of TN0110N3-G-P002 for a 24 V relay driver circuit?
TN0110N3-G-P002 handles up to 350 mA continuous drain current with a 100 V minimum drain-source breakdown voltage, providing a comfortable 4× voltage margin when driving a 24 V relay coil. At 350 mA through the 3 Ω maximum RDS(on), the device dissipates up to 370 mW in the worst case, requiring a small heatsink clip on the TO-92-3 package for sustained operation above 25°C ambient.
How does the built-in body diode of TN0110N3-G-P002 benefit relay and inductive load switching designs?
The integrated body diode in TN0110N3-G-P002 provides a free-wheeling path for inductive kickback energy when the gate turns off, eliminating the need for an external flyback diode across relay coils or motor windings drawing up to 350 mA. This reduces BOM cost by 1 component and prevents the drain voltage from exceeding the 100 V breakdown rating during turn-off transients, protecting both the MOSFET and adjacent logic circuitry in 24 V and 48 V industrial switching designs.
When is TN0110N3-G-P002 in a TO-92-3 package a practical alternative to an SMD MOSFET for a prototype load switch?
TN0110N3-G-P002 is preferred during prototyping or low-volume production runs of fewer than 500 units where hand-soldering TO-92-3 leads is faster than setting up SMT stencil printing. With 100 V / 350 mA ratings, it fits circuits controlled by 3.3 V or 5 V logic gates, since the gate threshold is typically 0.8 V to 1.5 V for small-signal N-channel MOSFETs. Switching up to 20 kHz low-current loads such as 10 mA LED strings or 100 mA solenoids is well within its capability without thermal management concerns.
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