TN0106N3-G Microchip MOSFET (N-Channel) (Other) In Stock
TN0106N3-G is a logic-level compatible N-channel MOSFET from Microchip Technology rated at 60 V minimum drain-source breakdown, 350 mA drain current, and 3 Ω on-resistance in a 3-pin TO-92 through-hole package. It features a built-in diode and low 8 pF feedback capacitance for reliable switching. Available from stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TN0106N3-G Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.5790(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Logic-level gate compatibility allows direct drive from 3.3 V and 5 V MCU GPIO pins without a gate driver
- 60 V minimum drain-source breakdown voltage suits motor control and relay switching at typical 12 V–48 V bus levels
- Compact 3-pin TO-92 through-hole package with built-in diode for easy prototype and low-volume production assembly
Applications
TN0106N3-G is used as a low-side switch in LED driver circuits, small relay and solenoid control, and fan speed control applications where an MCU GPIO pin directly drives the gate without an external gate driver. Its 60 V breakdown and 350 mA current capability cover 12 V load-switch and motor braking applications in automotive accessories and industrial controls. The TO-92 package and logic-level threshold make it a convenient choice for hobbyist and prototyping projects needing a simple MOSFET switch.
Specifications
| Manufacturer Package Code | TO-92-3 |
| YTEOL | 8 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 0.35A |
| Drain-source On Resistance-Max | 3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 1W |
| Power Dissipation-Max (Abs) | 1W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines, Taiwan |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Can TN0106N3-G be driven directly from a 3.3 V MCU GPIO without a separate gate driver?
Yes, TN0106N3-G is logic-level compatible, meaning its threshold voltage is specified to turn on fully at 3.3 V to 5 V gate drive, so a standard MCU GPIO pin with 4 mA to 8 mA source current is sufficient to switch up to 350 mA drain current without any external gate driver IC.
What is the on-resistance of TN0106N3-G and how does it affect power dissipation at 350 mA?
The maximum drain-source on-resistance is 3 Ω at specified gate voltage, so at the rated 350 mA drain current the conduction loss reaches approximately 370 mW (I²×R = 0.35²×3), which must be considered in the thermal budget—the TO-92 package has a typical junction-to-ambient resistance of 200°C/W.
What drain-source voltage rating does TN0106N3-G offer and which load voltages does it safely switch?
The TN0106N3-G has a minimum drain-source breakdown voltage of 60 V, allowing it to safely switch loads powered by 12 V automotive rails, 24 V industrial supplies, or 48 V bus systems with ample margin above normal operating voltage plus inductive transient spikes.
What role does the built-in diode in TN0106N3-G play in inductive load switching?
The integrated body diode conducts inductive kickback current when the MOSFET turns off an inductive load—such as a relay coil or small motor—clamping the drain voltage spike and protecting both the MOSFET and the driving MCU, often eliminating the need for a separate external flyback diode in the circuit.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8700 | $0.87 |
| 25+ | $0.8100 | $20.25 |
| 100+ | $0.8000 | $80.00 |
| 1000+ | $0.6800 | $680.00 |
| 4000+ | $0.5820 | $2328.00 |
| 8000+ | $0.5790 | $4632.00 |
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