STP410N4F7AG STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP410N4F7AG is an automotive-grade N-channel power MOSFET rated 40 V, 180 A with 0.8 mΩ typical RDS(on) in STripFET F7 technology. AEC-Q101 qualified for harsh environments in a TO-220AB package. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP410N4F7AG Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low RDS(on) of 0.8 mΩ typical (1.8 mΩ max) in STripFET F7 split-gate trench technology, minimizing conduction losses at 180 A drain current
- Automotive AEC-Q101 grade qualification with 1900 mJ avalanche energy rating, ensuring robust operation in vehicle power management and motor drive applications
- 40 V breakdown voltage in a TO-220AB package with built-in body diode, enabling direct use as a synchronous rectifier or load switch in 12 V and 24 V automotive systems
Applications
The STP410N4F7AG is designed for automotive DC-DC converters, electric power steering motor drives, and battery management systems in 12 V to 24 V vehicle architectures. Its 0.8 mΩ RDS(on) minimizes power dissipation at high currents, supporting high-efficiency synchronous buck converters and full H-bridge motor controllers. The AEC-Q101 qualification and 1900 mJ avalanche energy make it suitable for ADAS, body control module switching stages, and EV auxiliary power supplies.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 1900mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40V |
| Drain Current-Max (ID) | 180A |
| Drain-source On Resistance-Max | 0.0018Ω |
| FET Technology | SPLIT GATE TRENCH MOSFET |
| Feedback Cap-Max (Crss) | 390pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 365W |
| Pulsed Drain Current-Max (IDM) | 720A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What conduction loss does the STP410N4F7AG produce at 100 A drain current in a 12 V automotive buck converter?
At 100 A and using the typical RDS(on) of 0.8 mΩ, conduction loss is I² × RDS(on) = 10,000 × 0.0008 = 8 W. Using the maximum RDS(on) of 1.8 mΩ, worst-case loss is 18 W. These figures make the STP410N4F7AG one of the lowest-loss 40 V N-channel MOSFETs in the TO-220AB package, suitable for 97%+ efficiency buck stages in automotive 12 V power distribution.
How does the 1900 mJ avalanche energy rating of STP410N4F7AG protect against inductive load switching in motor drive circuits?
The 1900 mJ unclamped avalanche energy (E_as) means the STP410N4F7AG can safely absorb 1.9 J per switching event when an inductive load forces the drain voltage above 40 V. This is critical in automotive power steering or DC motor drives where parasitic inductance in cabling can spike drain voltage during switch-off. The high avalanche ruggedness reduces the need for external snubber circuits and improves system reliability across -40°C to +175°C junction temperature range.
Is STP410N4F7AG AEC-Q101 qualified, and what automotive temperature grade does it cover?
Yes, the STP410N4F7AG carries AEC-Q101 automotive qualification, covering operation across the full junction temperature range of -55°C to +175°C, which corresponds to Grade 0 automotive stress requirements. This qualification, combined with STripFET F7 technology and 180 A current rating, makes it suitable for under-hood environments in passenger vehicles, commercial trucks, and 48 V mild-hybrid powertrain designs.
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