TN2425N8-G Microchip MOSFET (N-Channel) (Other) In Stock

Name: TN2425N8-G
Brand: Microchip
SKU: TN2425N8-G
Availability: InStock

Microchip TN2425N8-G is a logic-level compatible N-channel MOSFET rated at 250 V breakdown voltage and 3.5 Ω on-resistance in a compact SOT-89-3 package. It supports a maximum drain current of 0.48 A and features a built-in diode for protection. Available from stock worldwide with fast shipping.

ACTIVEMOSFET (N-Channel)Verified Jun 2026

Package / Visual Reference

TN2425N8-GOther

Quick Facts

Manufacturer: Microchip
Package: Other
Pin Count: 3
Lifecycle: ACTIVE
Datasheet: TN2425N8-G Datasheet PDF
Category: MOSFET (N-Channel)
Price: From $0.8101(MOQ 1)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of TN2425N8-G?

Logic-level compatible gate drive for direct MCU interfacing without additional drive circuitry
250 V drain-source breakdown voltage with 0.48 A maximum drain current for medium-voltage switching
Built-in body diode in SOT-89-3 package enabling compact PCB layouts with integrated flyback protection

What is TN2425N8-G used for?

The TN2425N8-G is well suited for low-side switching in industrial control circuits, relay drivers, and solenoid actuators operating at up to 250 V. Its logic-level compatibility makes it a natural fit for microcontroller-driven designs where gate signals come directly from 3.3 V or 5 V I/O pins. The SOT-89-3 footprint also lends itself to space-constrained LED driver and small motor control applications.

What are the specifications of TN2425N8-G?

Manufacturer Package Code	SOT-89-3
Factory Lead Time	7Weeks
YTEOL	10
Additional Feature	LOGIC LEVEL COMPATIBLE
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	250V
Drain Current-Max (ID)	0.48A
Drain-source On Resistance-Max	3.5Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	40pF
JEDEC-95 Code	TO-243AA
JESD-30 Code	R-PSSO-F3
JESD-609 Code	e3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1.6W
Pulsed Drain Current-Max (IDM)	1.9A
Qualification Status	Not Qualified
Surface Mount	YES
Terminal Finish	Matte Tin (Sn)
Terminal Form	FLAT
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-off Time-Max (toff)	50ns
Turn-on Time-Max (ton)	40ns
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
Moisture Sensitivity Level	MSL 1
ECCN	EAR99
HTS Code	8541.29.00.95
Country of Origin	Mainland China, Philippines

Where can I find the TN2425N8-G datasheet?

TN2425N8-G Datasheet Download

Official datasheet from Microchip

What are equivalent replacements for TN2425N8-G?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the maximum drain-source voltage the TN2425N8-G can withstand?

The TN2425N8-G is rated for a minimum drain-source breakdown voltage of 250 V, making it suitable for medium-voltage switching applications such as industrial relay drivers and solenoid controls operating below that threshold. Its 0.48 A maximum drain current and 3.5 Ω on-resistance further define the safe operating envelope.

Can TN2425N8-G be driven directly from a 3.3 V or 5 V microcontroller GPIO pin?

Yes. The TN2425N8-G is explicitly rated as logic-level compatible, meaning its gate threshold is low enough to achieve full enhancement from a 3.3 V or 5 V logic signal. This eliminates the need for a separate gate driver IC in many designs, saving board space and BOM cost while keeping switching transitions within acceptable limits at 0.48 A load currents.

How does the built-in diode in TN2425N8-G benefit inductive load switching designs?

The integrated body diode provides a free-wheeling path for inductive kickback energy when the MOSFET turns off, clamping the drain voltage and protecting both the device and surrounding circuitry. For relay coil or solenoid drivers operating at up to 250 V, this eliminates the need for an external Schottky diode, reducing component count and simplifying PCB layout in the SOT-89-3 footprint.

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AvailabilityIn Stock

Reference Price (USD)

From $0.8101

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
1+	$1.7000	$1.70
3+	$1.3500	$4.05
10+	$1.1300	$11.30
100+	$1.0400	$104.00
5000+	$0.9900	$4950.00
8000+	$0.8101	$6481.04

pcs

Unit price: $1.7000 · Total: $1.70

In Stock · 24h Response · Worldwide Shipping

Direct Contact

WhatsApp Inquiry Email RFQ

Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

“Response time is incredible — usually under 4 hours. They understand that production lines can't wait.”

James Wright

Supply Chain Director, CircuitPro Ltd, UK

TN2425N8-G Microchip MOSFET (N-Channel) (Other) In Stock

What are the key features of TN2425N8-G?

What is TN2425N8-G used for?

What are the specifications of TN2425N8-G?

Compliance & Regulatory

Where can I find the TN2425N8-G datasheet?

What are equivalent replacements for TN2425N8-G?

Frequently Asked Questions

What is the maximum drain-source voltage the TN2425N8-G can withstand?

Can TN2425N8-G be driven directly from a 3.3 V or 5 V microcontroller GPIO pin?

How does the built-in diode in TN2425N8-G benefit inductive load switching designs?

Related Guides

CSD87313DMS Synchronous Buck Power Stage Design Guide

STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection

C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC

STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security

Why Buy from FindMyChip

About Microchip

More from Microchip

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