STP10N80K5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STP10N80K5 is an STMicroelectronics MDmesh K5 N-channel power MOSFET rated at 800 V drain-source breakdown and 9 A continuous drain current with 0.470 Ω typical on-resistance. It integrates a built-in body diode and features 130 mJ avalanche energy rating in a through-hole TO-220 package. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP10N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.2777(MOQ 2)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800 V drain-source breakdown voltage enables reliable operation in high-voltage offline power conversion topologies
- 0.470 Ω typical RDS(on) minimises conduction losses in 9 A switching applications for improved efficiency
- 130 mJ avalanche energy rating (Eas) provides ruggedness against unclamped inductive switching transients
- 0.8 pF maximum feedback capacitance (Crss) reduces gate-drain Miller charge for fast switching transitions
Applications
The STP10N80K5 is designed for high-voltage power conversion applications including flyback converters, forward converters, and LLC resonant topologies operating from universal AC mains input (85–265 V AC). Its MDmesh K5 superjunction technology balances low RDS(on) with high breakdown voltage for switch-mode power supplies in industrial, lighting, and consumer equipment. The standard TO-220 through-hole package simplifies heat-sink mounting and prototyping for designs delivering up to approximately 100 W output.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 130mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 9A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.8pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 130W |
| Pulsed Drain Current-Max (IDM) | 36A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
In which power supply topologies is the STP10N80K5 most effective given its 800 V rating?
The STP10N80K5 is well-suited for flyback, forward, and LLC resonant converters operating from a universal AC mains rectified bus of approximately 380 V DC. The 800 V drain-source breakdown provides a comfortable 2× margin over the 400 V DC bus, accommodating up to 200 V of inductive voltage spikes during switch-off transitions. Designs delivering 50 W to 150 W output at switching frequencies up to 100 kHz benefit most from its combination of low RDS(on) and low Crss.
How does the STP10N80K5 manage inductive switching transients in unclamped circuits?
The STP10N80K5 is rated for 130 mJ maximum avalanche energy (Eas) at a single pulse, allowing it to absorb energy from unclamped inductive loads without immediate failure. This avalanche ruggedness is valuable in motor drive and relay driver circuits where stray inductance can generate voltage spikes exceeding the 800 V rating. The built-in body diode also provides a freewheeling path during dead-time intervals in bridge topologies.
What gate drive voltage is needed to fully enhance the STP10N80K5 and what RDS(on) can be expected?
With a gate-source voltage of 10 V, the STP10N80K5 achieves a typical RDS(on) of 0.470 Ω and a maximum of 0.600 Ω, which corresponds to approximately 5.4 W of conduction loss at the full 9 A rated drain current. For gate drive circuits, a 10 V gate signal from a standard bootstrap driver IC is sufficient, and the 0.8 pF Crss minimises the Miller plateau duration, reducing switching losses at frequencies above 50 kHz.
When would a designer choose the STP10N80K5 over a 650 V MOSFET for a 400 V DC bus design?
Designers choose the STP10N80K5's 800 V rating over a 650 V part when the 400 V DC bus has poorly regulated mains input, significant line spikes, or when no active clamp snubber is used. The extra 150 V headroom reduces stress-related degradation over the product lifetime and meets safety margins required by IEC 62368 for reinforced isolation topologies. The trade-off is a slightly higher RDS(on) of 0.470 Ω compared to comparable 650 V devices near 0.3 Ω.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2+ | $1.3466 | $2.69 |
| 4000+ | $1.2910 | $5163.88 |
| 8000+ | $1.2843 | $10274.56 |
| 16000+ | $1.2777 | $20442.56 |
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