VN2106N3-G P013 Microchip MOSFET (N-Channel) (Other) In Stock
The VN2106N3-G is a Microchip N-channel enhancement-mode MOSFET designed for low-voltage switching applications, featuring a drain-source voltage rating of 60 V and a continuous drain current up to 200 mA in a SOT-23 3-pin package. It is suitable for general-purpose logic-level switching and load control.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- VN2106N3-G P013 Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of VN2106N3-G P013?
- N-channel enhancement-mode operation with logic-level gate drive for direct MCU control
- 60 V drain-source breakdown voltage for reliable operation in 12 V to 48 V systems
- Compact SOT-23 3-pin package enables high-density PCB placement
- Low gate threshold voltage for effective switching with 3.3 V and 5 V logic signals
What is VN2106N3-G P013 used for?
The VN2106N3-G is used in low-side switch circuits for relay driving, LED string switching, and solenoid control in consumer electronics, industrial sensor modules, and IoT edge devices. Its logic-level gate threshold allows direct drive from 3.3 V microcontroller GPIO pins without additional gate driver circuitry, simplifying designs in battery-powered devices and embedded control systems.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Where can I find the VN2106N3-G P013 datasheet?
VN2106N3-G P013 Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for VN2106N3-G P013?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage and continuous drain current for VN2106N3-G?
The VN2106N3-G is rated for a drain-source voltage of 60 V and a continuous drain current of 200 mA at room temperature, making it suitable for switching resistive and inductive loads in 12 V and 24 V control circuits such as LED drivers, relay coils, and small motor control applications.
Can a 3.3 V MCU GPIO directly drive the gate of VN2106N3-G without a level-shifter?
Yes, the VN2106N3-G has a logic-level gate threshold voltage below 2.5 V, allowing a 3.3 V microcontroller GPIO pin to fully turn on the device and achieve on-state resistance below 5 Ω. This eliminates the need for a separate gate driver or level-shifting circuit in most embedded switching applications.
What PCB footprint does VN2106N3-G use and how does it compare to TO-92?
The VN2106N3-G comes in a SOT-23 3-pin surface-mount package occupying approximately 3 mm x 1.7 mm of PCB area, versus the 5 mm x 5 mm footprint of a through-hole TO-92. The SOT-23 package reduces board area by over 80% and is compatible with standard automated SMT assembly, important for high-volume IoT and consumer product manufacturing.
For inductive loads like relay coils, what protection measure should be used with VN2106N3-G?
When switching inductive loads such as relay coils or solenoids, a flyback diode rated at least 60 V and 500 mA should be placed in anti-parallel across the load. This clamps the inductive kickback voltage below the VN2106N3-G drain-source 60 V rating and prevents avalanche breakdown, protecting both the MOSFET and the MCU driving the gate.
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