VN2106N3-G P013 Microchip MOSFET (N-Channel) (Other) In Stock

The VN2106N3-G is a Microchip N-channel enhancement-mode MOSFET designed for low-voltage switching applications, featuring a drain-source voltage rating of 60 V and a continuous drain current up to 200 mA in a SOT-23 3-pin package. It is suitable for general-purpose logic-level switching and load control.

ACTIVEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
VN2106N3-G P013Other
Quick Facts
Manufacturer
Microchip
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • N-channel enhancement-mode operation with logic-level gate drive for direct MCU control
  • 60 V drain-source breakdown voltage for reliable operation in 12 V to 48 V systems
  • Compact SOT-23 3-pin package enables high-density PCB placement
  • Low gate threshold voltage for effective switching with 3.3 V and 5 V logic signals

Applications

The VN2106N3-G is used in low-side switch circuits for relay driving, LED string switching, and solenoid control in consumer electronics, industrial sensor modules, and IoT edge devices. Its logic-level gate threshold allows direct drive from 3.3 V microcontroller GPIO pins without additional gate driver circuitry, simplifying designs in battery-powered devices and embedded control systems.

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)

Datasheet

VN2106N3-G P013 Datasheet Download

Official datasheet from Microchip

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the maximum drain-source voltage and continuous drain current for VN2106N3-G?

The VN2106N3-G is rated for a drain-source voltage of 60 V and a continuous drain current of 200 mA at room temperature, making it suitable for switching resistive and inductive loads in 12 V and 24 V control circuits such as LED drivers, relay coils, and small motor control applications.

Can a 3.3 V MCU GPIO directly drive the gate of VN2106N3-G without a level-shifter?

Yes, the VN2106N3-G has a logic-level gate threshold voltage below 2.5 V, allowing a 3.3 V microcontroller GPIO pin to fully turn on the device and achieve on-state resistance below 5 Ω. This eliminates the need for a separate gate driver or level-shifting circuit in most embedded switching applications.

What PCB footprint does VN2106N3-G use and how does it compare to TO-92?

The VN2106N3-G comes in a SOT-23 3-pin surface-mount package occupying approximately 3 mm x 1.7 mm of PCB area, versus the 5 mm x 5 mm footprint of a through-hole TO-92. The SOT-23 package reduces board area by over 80% and is compatible with standard automated SMT assembly, important for high-volume IoT and consumer product manufacturing.

For inductive loads like relay coils, what protection measure should be used with VN2106N3-G?

When switching inductive loads such as relay coils or solenoids, a flyback diode rated at least 60 V and 500 mA should be placed in anti-parallel across the load. This clamps the inductive kickback voltage below the VN2106N3-G drain-source 60 V rating and prevents avalanche breakdown, protecting both the MOSFET and the MCU driving the gate.

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AvailabilityIn Stock
Reference Price (USD)
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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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Rajesh Patel
Procurement Manager, VoltEdge Energy, India