STF8N60DM2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STF8N60DM2 is an N-channel MDmesh DM2 power MOSFET rated at 600 V and 8 A with 550 mΩ typical drain-source on-resistance. It features isolated TO-220FP packaging and 430 mJ avalanche energy rating for rugged switching applications.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STF8N60DM2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V breakdown voltage with 550 mΩ typical RDS(on) for efficient high-voltage switching
- 430 mJ avalanche energy rating (EAS) enabling robust unclamped inductive switching tolerance
- Isolated TO-220FP package with built-in body diode simplifying heatsinking in compact converter designs
Applications
STF8N60DM2 targets offline flyback and LLC resonant converters in industrial power supplies where 600 V blocking capability is required alongside low conduction losses. The MDmesh DM2 superjunction technology reduces switching losses compared to planar MOSFETs, benefiting solar microinverters and motor drive applications. The isolated TO-220FP package simplifies thermal management on standard heatsinks while maintaining 8 A continuous drain current.
Specifications
| Manufacturer Package Code | TO-220FP |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 430mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.89pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Pulsed Drain Current-Max (IDM) | 32A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain current and voltage ratings make STF8N60DM2 suitable for offline power conversion?
STF8N60DM2 is rated for 600 V drain-source breakdown voltage and 8 A continuous drain current, covering typical offline AC-to-DC flyback designs operating from 85 V to 265 V AC. The 550 mΩ typical RDS(on) limits conduction losses even at full load, while the 430 mJ avalanche energy rating handles transformer energy dumps safely.
How does the MDmesh DM2 technology in STF8N60DM2 reduce switching losses in resonant converters?
The MDmesh DM2 superjunction process reduces gate charge and output capacitance compared to conventional planar 600 V MOSFETs. The 0.89 pF maximum feedback capacitance (Crss) minimizes drain-gate Miller charge, enabling faster switching transitions in LLC resonant converters and reducing switching losses at frequencies above 100 kHz.
Is STF8N60DM2 a direct fit into TO-220 heatsink mounts, or does the isolated package require special hardware?
The TO-220FP package uses an isolated tab, so the drain pad is electrically isolated from the mounting surface. This allows direct attachment to a grounded heatsink without an insulating pad, simplifying thermal interface design in multi-switch 600 V converters where all devices share a single heatsink at ground potential.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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