STRH100N10HYT STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH100N10HYT is a radiation-hardened N-channel Power MOSFET rated at 100 V and 48 A, featuring ultra-low 35 mΩ on-resistance and 954 mJ avalanche energy rating. Designed for space and high-reliability applications in TO-254AA package. From $12.50 in stock worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH100N10HYT Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STRH100N10HYT?
- Radiation-hardened design qualified for space and high-reliability environments with guaranteed SEE/TID performance
- Ultra-low drain-source on-resistance of 35 mΩ (max) for minimal conduction losses at 48 A continuous drain current
- Integrated body diode with 954 mJ avalanche energy rating (Eas) for robust operation in inductive switching circuits
What is STRH100N10HYT used for?
The STRH100N10HYT is engineered for satellite power management systems and space-grade DC-DC converters where radiation tolerance is mission-critical. It excels in high-reliability motor drives, power conditioning units for spacecraft, and terrestrial applications requiring MIL-grade robustness. The combination of 100 V breakdown voltage and low on-resistance makes it ideal for efficient synchronous rectification in harsh environments.
What are the specifications of STRH100N10HYT?
| YTEOL | 5.3 |
| Avalanche Energy Rating (Eas) | 954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 48A |
| Drain-source On Resistance-Max | 0.035Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 284pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 170W |
| Pulsed Drain Current-Max (IDM) | 192A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 50K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 169.4ns |
| Turn-on Time-Max (ton) | 87ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Where can I find the STRH100N10HYT datasheet?
STRH100N10HYT Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STRH100N10HYT?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source on-resistance of the STRH100N10HYT and how does it impact efficiency?
The STRH100N10HYT has a maximum drain-source on-resistance (RDS(on)) of 35 mΩ at a gate-source voltage of 10 V and drain current of 48 A. This low on-resistance minimizes conduction losses in power conversion circuits, contributing to efficiency improvements of several percentage points in space-grade DC-DC converters operating at full load.
Which radiation environments is the STRH100N10HYT qualified for in satellite power designs?
The STRH100N10HYT is a radiation-hardened MOSFET rated for total ionizing dose (TID) and single event effects (SEE) tolerance, making it suitable for low-earth orbit (LEO) and geostationary (GEO) satellite power buses operating at 28 V to 100 V rails. It supports drain currents up to 48 A under radiation conditions.
How does the STRH100N10HYT compare to standard commercial MOSFETs for inductive load switching at 100 V?
Unlike standard commercial MOSFETs, the STRH100N10HYT offers a guaranteed avalanche energy rating of 954 mJ (Eas), ensuring safe operation during unclamped inductive switching events at 100 V. The TO-254AA package also provides improved thermal dissipation and mechanical ruggedness for mission-critical inductive load applications compared to plastic-encapsulated alternatives.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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