STRH100N10HYT STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH100N10HYT is a radiation-hardened N-channel Power MOSFET rated at 100 V and 48 A, featuring ultra-low 35 mΩ on-resistance and 954 mJ avalanche energy rating. Designed for space and high-reliability applications in TO-254AA package. From $12.50 in stock worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH100N10HYT Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened design qualified for space and high-reliability environments with guaranteed SEE/TID performance
- Ultra-low drain-source on-resistance of 35 mΩ (max) for minimal conduction losses at 48 A continuous drain current
- Integrated body diode with 954 mJ avalanche energy rating (Eas) for robust operation in inductive switching circuits
Applications
The STRH100N10HYT is engineered for satellite power management systems and space-grade DC-DC converters where radiation tolerance is mission-critical. It excels in high-reliability motor drives, power conditioning units for spacecraft, and terrestrial applications requiring MIL-grade robustness. The combination of 100 V breakdown voltage and low on-resistance makes it ideal for efficient synchronous rectification in harsh environments.
Specifications
| YTEOL | 5.3 |
| Avalanche Energy Rating (Eas) | 954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 48A |
| Drain-source On Resistance-Max | 0.035Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 284pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 170W |
| Pulsed Drain Current-Max (IDM) | 192A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 50K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 169.4ns |
| Turn-on Time-Max (ton) | 87ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source on-resistance of the STRH100N10HYT and how does it impact efficiency?
The STRH100N10HYT has a maximum drain-source on-resistance (RDS(on)) of 35 mΩ at a gate-source voltage of 10 V and drain current of 48 A. This low on-resistance minimizes conduction losses in power conversion circuits, contributing to efficiency improvements of several percentage points in space-grade DC-DC converters operating at full load.
Which radiation environments is the STRH100N10HYT qualified for in satellite power designs?
The STRH100N10HYT is a radiation-hardened MOSFET rated for total ionizing dose (TID) and single event effects (SEE) tolerance, making it suitable for low-earth orbit (LEO) and geostationary (GEO) satellite power buses operating at 28 V to 100 V rails. It supports drain currents up to 48 A under radiation conditions.
How does the STRH100N10HYT compare to standard commercial MOSFETs for inductive load switching at 100 V?
Unlike standard commercial MOSFETs, the STRH100N10HYT offers a guaranteed avalanche energy rating of 954 mJ (Eas), ensuring safe operation during unclamped inductive switching events at 100 V. The TO-254AA package also provides improved thermal dissipation and mechanical ruggedness for mission-critical inductive load applications compared to plastic-encapsulated alternatives.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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