STGD10NC60KDT4 STMicroelectronics Transistor IGBT (Other) In Stock
The STGD10NC60KDT4 is a 600 V, 10 A N-channel IGBT with short-circuit ruggedness from STMicroelectronics, packaged in a surface-mount DPAK. It integrates a built-in anti-parallel diode and operates across a -55 °C to 150 °C junction temperature range, dissipating up to 62 W. Designed for switched-mode power supplies, motor drives, and low-frequency inverter applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGD10NC60KDT4 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $0.5500(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V collector-emitter voltage with 10 A continuous collector current rating
- Short-circuit rugged design sustaining 10 µs short-circuit duration at 600 V
- Built-in anti-parallel freewheeling diode eliminates external diode requirement
- Surface-mount DPAK package with low 0.35 °C/W junction-to-case thermal resistance
- Wide operating temperature range: -55 °C to 150 °C junction temperature
- Low gate charge enabling switching losses under 62 µJ at rated conditions
Applications
The STGD10NC60KDT4 is used in switched-mode power supply output stages, low-power motor drives, and home appliance inverters where a rugged 600 V switch in a compact surface-mount footprint is required. It is also suitable for UPS systems and solar micro-inverters that demand reliable short-circuit withstand capability and integrated freewheeling diode operation.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5.4 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 20A |
| Collector-Emitter Voltage-Max | 600V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 242ns |
| Turn-on Time-Nom (ton) | 23ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STGD10NC60KDT4?
The STGD10NC60KDT4 is rated for a 600 V collector-emitter breakdown voltage and a 10 A continuous collector current (IC), with a pulsed collector current of up to 20 A. These ratings make it suitable for 230 VAC mains-connected circuits with appropriate derating for reliable long-term operation.
How does the built-in diode in the STGD10NC60KDT4 simplify motor drive circuit design?
The integrated anti-parallel freewheeling diode eliminates the need for a separate external diode in each half-bridge switch position, reducing component count and PCB area. In a 3-phase motor drive operating at 400 V bus, this integration can save 6 discrete diodes per inverter module, lowering BOM cost and improving reliability.
What is the short-circuit withstand capability of the STGD10NC60KDT4 and why does it matter?
The STGD10NC60KDT4 is characterized as a short-circuit rugged IGBT capable of surviving a 10 µs short-circuit duration at 600 V collector-emitter voltage. This characteristic is critical in motor drive and inverter designs because a short circuit can occur during load faults, and the 10 µs window provides sufficient time for gate-drive protection circuitry to detect and turn off the device before thermal damage occurs.
Which package does the STGD10NC60KDT4 use, and how does it help with thermal management?
The STGD10NC60KDT4 is supplied in a DPAK (TO-252) surface-mount package with an exposed pad for heat sinking. The package offers a junction-to-case thermal resistance of approximately 2 °C/W, and with a suitable PCB copper area or external heatsink, the device can dissipate up to 62 W while keeping junction temperature below the 150 °C maximum.
For what switching frequency range is the STGD10NC60KDT4 optimally designed?
The STGD10NC60KDT4 is optimized for low-frequency switching applications typically up to 20 kHz. At higher frequencies its switching losses increase, so it is best suited for power factor correction stages, slow-switching resonant converters, or motor drives operating below 10 kHz where the 600 V ruggedness and low saturation voltage (VCE(sat) ≈ 1.7 V at 10 A) provide efficiency advantages.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.3000 | $13.00 |
| 25+ | $1.0800 | $27.00 |
| 100+ | $0.9999 | $99.99 |
| 500+ | $0.7970 | $398.51 |
| 1000+ | $0.7318 | $731.79 |
| 2500+ | $0.5500 | $1375.00 |
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