STGP6NC60HD STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The STGP6NC60HD is an N-channel IGBT rated at 600 V collector-emitter voltage and 15 A continuous collector current. It integrates a built-in fast recovery antiparallel diode and features a maximum gate-emitter threshold voltage of 5.75 V with a 20 V gate oxide limit. Housed in a TO-220AB package, it targets motor drive inverters, switch-mode power supplies, and induction heating applications operating from mains voltage.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGP6NC60HD Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $0.3868(MOQ 12)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V collector-emitter breakdown voltage for mains-connected designs
- 15 A continuous collector current in TO-220AB package
- Integrated built-in fast recovery antiparallel freewheeling diode
- 5.75 V maximum gate threshold enabling logic-level gate drive compatibility
- 20 V maximum gate-emitter voltage for robust gate driver interfacing
- TO-220AB package with isolated mounting tab for heatsink attachment
Applications
The STGP6NC60HD is designed for medium-power motor drive inverter stages where a 600 V, 15 A switch is required to control three-phase induction or BLDC motors from a rectified mains bus. Switch-mode power supply topologies such as full-bridge and half-bridge converters operating at 50 kHz to 100 kHz benefit from the integrated fast recovery diode, which eliminates an external freewheeling component. Induction heating generators, welding inverters, and UPS output stages also use this device for its rugged TO-220AB footprint and straightforward gate drive requirements.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5.25 |
| Collector Current-Max (IC) | 15A |
| Collector-Emitter Voltage-Max | 600V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 56W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 222ns |
| Turn-on Time-Nom (ton) | 17.3ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum collector-emitter voltage and collector current rating of STGP6NC60HD?
The STGP6NC60HD is rated for a 600 V maximum collector-emitter voltage and 15 A continuous collector current. These ratings make it suitable for switching stages in mains-powered equipment operating from rectified 230 V or 115 V AC buses, where the DC bus voltage typically reaches 325 V or 160 V respectively.
Does STGP6NC60HD require an external freewheeling diode in an inverter half-bridge circuit?
No. The device integrates a built-in antiparallel fast recovery diode, eliminating the need for an external freewheeling diode in half-bridge or full-bridge inverter topologies. This reduces component count, PCB area, and assembly cost in motor drive and power converter designs that switch inductive loads.
What gate drive voltage is needed to fully saturate STGP6NC60HD, and is it logic-level compatible?
A gate-emitter voltage of at least 15 V is recommended for full saturation and minimum on-state losses. The maximum gate threshold is 5.75 V, but standard IGBT gate driver ICs that output 15 V to 20 V gate pulses are required; the device is not directly logic-level compatible with 3.3 V or 5 V microcontroller I/O without an intermediate gate driver stage.
For a 1 kW induction heating circuit, how should the heatsink be specified for STGP6NC60HD at 50 kHz?
At 15 A and 600 V bus in a resonant induction heater switching at 50 kHz, the total power dissipation depends on both conduction losses and switching losses. Using the TO-220AB package's junction-to-case thermal resistance of approximately 1.25°C/W and a 150°C maximum junction temperature, a heatsink with thermal resistance below 5°C/W is typically required to maintain safe junction temperatures at ambient temperatures up to 40°C.
When would STGP6NC60HD be preferred over a similarly rated MOSFET in a 600 V motor drive?
At 600 V and 15 A, a comparably priced MOSFET would have significantly higher on-resistance than the STGP6NC60HD's IGBT saturation voltage, leading to higher conduction losses above roughly 10 A in hard-switching topologies. For motor drives operating at 10 kHz to 20 kHz switching frequency with continuous high-current conduction, the IGBT's lower on-state voltage drop of approximately 2 V makes it more efficient than a 600 V N-channel MOSFET of similar cost.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 12+ | $0.5072 | $6.09 |
| 2000+ | $0.4939 | $987.84 |
| 3000+ | $0.4400 | $1320.00 |
| 8000+ | $0.4011 | $3208.88 |
| 16000+ | $0.3938 | $6301.12 |
| 32000+ | $0.3868 | $12377.28 |
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