STGW40V60DF STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The STGW40V60DF is a single N-channel IGBT from STMicroelectronics with an integrated fast recovery diode, rated at 600V collector-emitter voltage and 80A continuous collector current in a TO-247 package. Designed for high-efficiency power switching, it offers low saturation voltage and excellent EMI performance. Available from major distributors worldwide with fast shipping options.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGW40V60DF Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.3576(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V/80A N-channel IGBT with integrated fast recovery anti-parallel diode for simplified circuit design
- Low VCE(sat) for reduced conduction losses and high-efficiency power conversion
- TO-247 package provides excellent thermal performance with low thermal resistance for high-power applications
- Optimized for hard and resonant switching topologies with fast switching speed and low gate charge
Applications
The STGW40V60DF is well suited for industrial motor drives, solar inverters, and uninterruptible power supplies (UPS) where efficient high-voltage switching is critical. Its integrated freewheeling diode simplifies inverter bridge designs and reduces component count in three-phase drive circuits. The device also finds use in induction heating equipment, welding machines, and PFC (power factor correction) stages.
Specifications
| Factory Lead Time | 15Weeks |
| YTEOL | 5.25 |
| Collector Current-Max (IC) | 80A |
| Collector-Emitter Voltage-Max | 600V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 283W |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 241ns |
| Turn-on Time-Nom (ton) | 73ns |
| VCEsat-Max | 2.3V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum collector-emitter voltage and continuous collector current of the STGW40V60DF?
The STGW40V60DF is rated for a maximum collector-emitter voltage (VCES) of 600V and a maximum continuous collector current (IC) of 80A at 25°C, making it suitable for high-power industrial and energy applications.
Does the STGW40V60DF include an integrated freewheeling diode?
Yes, the STGW40V60DF integrates a fast recovery anti-parallel diode (also known as a freewheeling diode) in a single TO-247 package, which simplifies inverter and converter designs by eliminating the need for an external diode and reducing overall board area.
What package does the STGW40V60DF use and what are its thermal characteristics?
The STGW40V60DF comes in a TO-247 through-hole package (JEDEC-95 code TO-247), which provides a large exposed metal tab for efficient heat sinking. This package allows the device to handle high power dissipation in demanding industrial environments with proper heatsink mounting.
What applications is the STGW40V60DF designed for?
The STGW40V60DF is designed for high-efficiency power switching applications including motor drives, solar inverters, UPS systems, induction heating, welding equipment, and power factor correction circuits. Its 600V/80A ratings and integrated diode make it ideal for demanding industrial power conversion stages.
What is the gate-emitter threshold voltage range for the STGW40V60DF?
The STGW40V60DF has a gate-emitter threshold voltage (VGE(th)) with a maximum of 7V, and the maximum allowable gate-emitter voltage (VGE) is ±20V. These parameters are important for reliable turn-on and turn-off behavior in gate driver circuit design.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5773 | $1.58 |
| 4+ | $1.5771 | $6.31 |
| 600+ | $1.4150 | $849.00 |
| 2400+ | $1.4079 | $3378.96 |
| 4800+ | $1.3823 | $6635.04 |
| 9600+ | $1.3576 | $13033.15 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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