STGW80V60DF STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The STGW80V60DF is an N-channel IGBT transistor rated at 600 V collector-emitter voltage and 120 A continuous collector current with 469 W maximum power dissipation. It integrates a fast soft-recovery co-packaged diode optimized for hard-switching power conversion. This TO-247 through-hole device targets high-efficiency motor drives, PFC converters, and solar inverter applications.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STGW80V60DF Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $3.2579(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V collector-emitter breakdown voltage for high-voltage power stages
- 120 A continuous collector current with 469 W power dissipation
- Co-packaged fast soft-recovery freewheeling diode
- N-channel IGBT optimized for hard-switching at high frequency
- TO-247 through-hole package for robust thermal management
- Low gate-emitter threshold for efficient drive circuit design
- Maximum gate-emitter voltage rating of 20 V
Applications
The STGW80V60DF is designed for high-power motor drive inverters in industrial variable-frequency drives and servo systems requiring 600 V rail handling. It is well suited for photovoltaic solar inverters and uninterruptible power supplies where the integrated fast diode minimizes reverse-recovery losses during switching transitions. Additional uses include induction heating systems and switch-mode power supplies operating at several kHz switching frequencies.
Specifications
| YTEOL | 0 |
| Collector Current-Max (IC) | 120A |
| Collector-Emitter Voltage-Max | 600V |
| Gate-Emitter Voltage-Max | 20V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 469W |
| Surface Mount | NO |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STGW80V60DF:
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247
Frequently Asked Questions
What are the key voltage and current ratings of the STGW80V60DF?
The STGW80V60DF supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A, with a peak power dissipation of 469 W. These ratings make it suitable for industrial motor drives and high-power inverters operating from 400 V AC mains. The gate-emitter voltage is limited to 20 V maximum.
How does the integrated freewheeling diode benefit motor drive designs using STGW80V60DF?
The co-packaged fast soft-recovery diode eliminates the need for an external freewheeling diode in each inverter leg, reducing component count and PCB complexity. The soft-recovery characteristic reduces reverse-recovery current spikes during commutation, lowering switching losses and EMI noise, which is critical in 3-phase motor drive designs operating at 10 kHz or higher switching frequencies.
In which package does the STGW80V60DF come, and how does it aid thermal management?
The STGW80V60DF is housed in a TO-247 through-hole package, which features a large exposed metal tab for direct mounting to a heatsink. With a maximum junction temperature of 150°C and thermal resistance junction-to-case as low as 0.32°C/W, designers can efficiently extract up to 469 W of dissipation using standard forced-air or liquid-cooled heatsinks in inverter assemblies.
When would an engineer choose STGW80V60DF over a similarly rated MOSFET for a solar inverter?
IGBTs like the STGW80V60DF offer lower on-state saturation voltage at high current densities above 60 A compared to equivalent-rated MOSFETs, reducing conduction losses in the 600 V bus topologies common in string solar inverters. MOSFETs exhibit lower switching losses at very high frequencies above 100 kHz, so STGW80V60DF is the better choice for switching frequencies in the 10 kHz to 30 kHz range typical of solar inverters.
What gate drive requirements should designers plan for when using STGW80V60DF?
The STGW80V60DF requires a gate drive voltage of typically +15 V for full turn-on and -8 V to -15 V for robust turn-off to prevent parasitic re-triggering. Gate charge is approximately 480 nC, so a gate driver capable of sourcing and sinking at least 2 A peak is recommended to achieve switching times compatible with 20 kHz operation, while maintaining the gate resistor above 3.3 Ω to limit dV/dt and EMI.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.7900 | $4.79 |
| 30+ | $4.2740 | $128.22 |
| 120+ | $3.9007 | $468.08 |
| 270+ | $3.4083 | $920.24 |
| 600+ | $3.3310 | $1998.60 |
| 1200+ | $3.2579 | $3909.48 |
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