STGW20NC60VD STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGW20NC60VD is an ultra-fast N-channel IGBT rated at 600 V collector-emitter voltage and 60 A collector current with a built-in anti-parallel diode, housed in a 3-pin TO-247 through-hole package. Designed for high-frequency inverter and motor drive switching applications.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGW20NC60VD Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.4000(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGW20NC60VD?
- 600 V collector-emitter breakdown voltage for high-voltage switching
- 60 A maximum collector current for medium-power motor drives
- Ultra-fast switching optimized for high-frequency PWM operation
- Integrated built-in anti-parallel diode for flyback current handling
- Gate-emitter threshold voltage max 5.75 V for reliable drive
- TO-247 through-hole package for effective heatsink mounting
What is STGW20NC60VD used for?
The STGW20NC60VD is used in single-phase and three-phase inverter stages for motor drives, UPS systems, and solar inverters operating from 400 V DC bus rails where a 600 V / 60 A IGBT with integrated diode simplifies the half-bridge switch cell design. It also suits induction heating power stages and welding inverters that require ultra-fast switching at 10 kHz to 50 kHz to minimize switching losses.
What are the specifications of STGW20NC60VD?
| Factory Lead Time | 14Weeks |
| YTEOL | 5.25 |
| Additional Feature | ULTRA FAST |
| Collector Current-Max (IC) | 60A |
| Collector-Emitter Voltage-Max | 600V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 200W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 280ns |
| Turn-on Time-Nom (ton) | 42.5ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGW20NC60VD datasheet?
STGW20NC60VD Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGW20NC60VD?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STGW20NC60VD for inverter design?
The STGW20NC60VD is rated for 600 V collector-emitter voltage and 60 A maximum collector current, making it suitable for inverter H-bridge legs powered from a 400 V DC bus. With gate-emitter voltage limited to 20 V maximum, standard 15 V gate drive circuits are directly compatible and maintain safe operating margins.
How does the built-in anti-parallel diode benefit half-bridge inverter circuits?
The integrated anti-parallel diode conducts the freewheeling current during the dead-time interval when both switches are off, eliminating the need for an external discrete diode in the half-bridge cell. This reduces component count, minimizes PCB parasitic inductance, and improves switching speed since the co-packaged diode has shorter lead lengths than an external device mounted separately on a 400 V to 600 V inverter board.
At what switching frequencies can the STGW20NC60VD operate efficiently?
Labeled as ultra-fast, the STGW20NC60VD is optimized for PWM switching at frequencies from 10 kHz to 50 kHz. At 20 kHz — a common motor-drive carrier frequency for minimizing acoustic noise — its fast turn-off time reduces tail current losses, keeping overall inverter efficiency above 97% in typical 3 kW to 10 kW motor control applications.
What is the significance of the TO-247 package for thermal management in a motor drive?
The TO-247 through-hole package provides a large metal tab with a standardized hole pattern compatible with TO-247 heatsink clips and M3 screws. With a junction-to-case thermal resistance typically around 0.5°C/W to 0.8°C/W, a modest heatsink can keep the junction below 150°C even at 60 A continuous current, simplifying thermal design in 5 kW to 15 kW motor drive enclosures.
When should an engineer choose STGW20NC60VD over a MOSFET for a 400 V inverter?
IGBTs like the STGW20NC60VD are preferred over MOSFETs at 400 V bus voltages because their on-state voltage drop (Vce(sat)) is typically lower than a similarly-rated 600 V MOSFET's Rds(on)-based conduction loss at currents above 20 A. For motor drives switching at 10 kHz to 20 kHz with 30 A to 60 A RMS phase currents, the IGBT's conduction advantage reduces thermal stress and heatsink size compared to equivalently priced 600 V super-junction MOSFETs.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.3750 | $9.38 |
| 4+ | $6.8750 | $27.50 |
| 12+ | $6.2500 | $75.00 |
| 100+ | $1.8800 | $188.00 |
| 150+ | $1.5100 | $226.50 |
| 600+ | $1.4000 | $840.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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