RGW80TS65DGC11 ROHM Semiconductor Transistor IGBT (Other) In Stock

ROHM RGW80TS65DGC11 is a 650 V, 78 A single IGBT with built-in freewheeling diode in a TO-247N 3-pin package. Designed for high-efficiency power conversion with low switching losses. Available from stock with worldwide shipping.

ACTIVETransistor IGBTVerified Jun 2026
Package / Visual Reference
RGW80TS65DGC11Other
Quick Facts
Manufacturer
ROHM Semiconductor
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
Transistor IGBT
Price
From $3.1507(MOQ 1)
Temp Range
-40.0°C to ?°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650 V collector-emitter breakdown voltage and 78 A maximum collector current for demanding power conversion topologies
  • Built-in freewheeling diode eliminating the need for an external anti-parallel diode and reducing component count
  • TO-247N package providing excellent thermal dissipation for high-power applications requiring efficient heat management
  • Low switching losses optimized for high-frequency operation in industrial and renewable energy power stages

Applications

The RGW80TS65DGC11 is designed for use in industrial motor drives, solar inverters, UPS systems, and welding equipment where a high-voltage, high-current IGBT with integrated freewheeling diode is required. Its 650 V and 78 A ratings make it well-suited for three-phase inverter bridges and DC-DC converter stages in medium-power applications up to several kilowatts. The TO-247N package enables direct mounting to heatsinks, facilitating efficient thermal management in compact power electronics assemblies.

Specifications

Date Of Intro2018-11-20
YTEOL5.35
Collector Current-Max (IC)78A
Collector-Emitter Voltage-Max650V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 CodeTO-247
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Surface MountNO
Terminal FinishTin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
Turn-off Time-Nom (toff)228ns
Turn-on Time-Nom (ton)59ns
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Datasheet

RGW80TS65DGC11 Datasheet Download

Official datasheet from ROHM Semiconductor

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the voltage and current ratings of the RGW80TS65DGC11 and how do they affect power stage design?

The RGW80TS65DGC11 is rated at 650 V collector-emitter voltage and 78 A maximum collector current, making it suitable for medium-power industrial inverter designs operating from 400 V AC three-phase mains. These ratings allow engineers to design motor drive and renewable energy inverter stages with adequate voltage margin against transient spikes without requiring more expensive higher-voltage devices.

Why does the built-in freewheeling diode in the RGW80TS65DGC11 simplify power circuit design?

The integrated freewheeling diode in the RGW80TS65DGC11 eliminates the need for a separate external anti-parallel diode, reducing component count and PCB area in inverter bridges. In a standard 3-phase inverter using 6 switches, this saves 6 discrete diodes, lowers total part cost, and simplifies the gate drive layout while maintaining proper commutation for inductive loads at currents up to 78 A.

For which industrial power conversion applications is the RGW80TS65DGC11 best suited?

The RGW80TS65DGC11 is best suited for industrial motor variable frequency drives, solar PV string inverters, UPS systems, and induction heating equipment. Its 650 V, 78 A ratings and low switching losses are optimized for switching frequencies between 5 kHz and 20 kHz, covering the majority of medium-power (1 kW to 30 kW) industrial power conversion topologies used in factory automation and energy storage systems.

How does the TO-247N package of the RGW80TS65DGC11 support thermal management in high-power designs?

The TO-247N package of the RGW80TS65DGC11 features a large exposed metal tab that can be bolted directly to a heatsink, providing low thermal resistance from junction to case (typically around 0.5°C/W or better). This enables the IGBT to dissipate several hundred watts of switching and conduction losses continuously when the junction temperature is kept below 150°C, supporting reliable long-term operation in high-power inverter designs.

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AvailabilityIn Stock
Reference Price (USD)
From $3.1507
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$6.5250$6.53
10+$4.0700$40.70
30+$3.9824$119.47
100+$3.4100$341.00
120+$3.3346$400.15
250+$3.1507$787.68
pcs
Unit price: $6.5250 · Total: $6.53

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

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