RGW80TS65DGC11 ROHM Semiconductor Transistor IGBT (Other) In Stock
ROHM RGW80TS65DGC11 is a 650 V, 78 A single IGBT with built-in freewheeling diode in a TO-247N 3-pin package. Designed for high-efficiency power conversion with low switching losses. Available from stock with worldwide shipping.
- Manufacturer
- ROHM Semiconductor
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- RGW80TS65DGC11 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $3.1507(MOQ 1)
- Temp Range
- -40.0°C to ?°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V collector-emitter breakdown voltage and 78 A maximum collector current for demanding power conversion topologies
- Built-in freewheeling diode eliminating the need for an external anti-parallel diode and reducing component count
- TO-247N package providing excellent thermal dissipation for high-power applications requiring efficient heat management
- Low switching losses optimized for high-frequency operation in industrial and renewable energy power stages
Applications
The RGW80TS65DGC11 is designed for use in industrial motor drives, solar inverters, UPS systems, and welding equipment where a high-voltage, high-current IGBT with integrated freewheeling diode is required. Its 650 V and 78 A ratings make it well-suited for three-phase inverter bridges and DC-DC converter stages in medium-power applications up to several kilowatts. The TO-247N package enables direct mounting to heatsinks, facilitating efficient thermal management in compact power electronics assemblies.
Specifications
| Date Of Intro | 2018-11-20 |
| YTEOL | 5.35 |
| Collector Current-Max (IC) | 78A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 228ns |
| Turn-on Time-Nom (ton) | 59ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the RGW80TS65DGC11 and how do they affect power stage design?
The RGW80TS65DGC11 is rated at 650 V collector-emitter voltage and 78 A maximum collector current, making it suitable for medium-power industrial inverter designs operating from 400 V AC three-phase mains. These ratings allow engineers to design motor drive and renewable energy inverter stages with adequate voltage margin against transient spikes without requiring more expensive higher-voltage devices.
Why does the built-in freewheeling diode in the RGW80TS65DGC11 simplify power circuit design?
The integrated freewheeling diode in the RGW80TS65DGC11 eliminates the need for a separate external anti-parallel diode, reducing component count and PCB area in inverter bridges. In a standard 3-phase inverter using 6 switches, this saves 6 discrete diodes, lowers total part cost, and simplifies the gate drive layout while maintaining proper commutation for inductive loads at currents up to 78 A.
For which industrial power conversion applications is the RGW80TS65DGC11 best suited?
The RGW80TS65DGC11 is best suited for industrial motor variable frequency drives, solar PV string inverters, UPS systems, and induction heating equipment. Its 650 V, 78 A ratings and low switching losses are optimized for switching frequencies between 5 kHz and 20 kHz, covering the majority of medium-power (1 kW to 30 kW) industrial power conversion topologies used in factory automation and energy storage systems.
How does the TO-247N package of the RGW80TS65DGC11 support thermal management in high-power designs?
The TO-247N package of the RGW80TS65DGC11 features a large exposed metal tab that can be bolted directly to a heatsink, providing low thermal resistance from junction to case (typically around 0.5°C/W or better). This enables the IGBT to dissipate several hundred watts of switching and conduction losses continuously when the junction temperature is kept below 150°C, supporting reliable long-term operation in high-power inverter designs.
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More from ROHM Semiconductor
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.5250 | $6.53 |
| 10+ | $4.0700 | $40.70 |
| 30+ | $3.9824 | $119.47 |
| 100+ | $3.4100 | $341.00 |
| 120+ | $3.3346 | $400.15 |
| 250+ | $3.1507 | $787.68 |
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