IXBH12N300 IXYS SEMICONDUCTOR Transistor IGBT (Transistor Outline, Vertical) In Stock
IXYS IXBH12N300 is a single IGBT with a built-in anti-parallel diode rated at 3000 V collector-emitter and 30 A collector current, housed in a TO-247AD vertical through-hole package. Available from stock with worldwide shipping.
- Manufacturer
- IXYS SEMICONDUCTOR
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- IXBH12N300 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $26.3400(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IXBH12N300?
- 3000 V (VCES) collector-emitter voltage rating for ultra-high-voltage power switching applications
- 30 A continuous collector current (IC) in a single-chip configuration with integrated anti-parallel diode
- Gate-emitter threshold voltage max of 5 V ensuring reliable drive from standard IGBT gate drivers
- Gate-emitter voltage max of 20 V compatible with conventional ±15 V bipolar gate drive circuits
- TO-247AD package with collector connection to case for direct heatsink mounting and superior thermal management
- RoHS-compliant (JESD-609 e3) for use in lead-free power electronics manufacturing
What is IXBH12N300 used for?
The IXBH12N300 is designed for ultra-high-voltage power switching applications such as pulsed power systems, high-voltage DC/DC converters, medical X-ray and CT scanner power supplies, and industrial plasma generation equipment operating at bus voltages up to 3000 V. Its integrated anti-parallel diode eliminates the need for an external freewheeling diode, simplifying circuit design in half-bridge and full-bridge inverter topologies. The TO-247AD through-hole package allows direct bolting to a heatsink, making it suitable for high-power designs that require efficient thermal management in harsh industrial environments.
What are the specifications of IXBH12N300?
| YTEOL | 3 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 30A |
| Collector-Emitter Voltage-Max | 3000V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 5V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247AD |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 160W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 720ns |
| Turn-on Time-Nom (ton) | 204ns |
| VCEsat-Max | 3.2V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Philippines |
Where can I find the IXBH12N300 datasheet?
IXBH12N300 Datasheet DownloadOfficial datasheet from IXYS SEMICONDUCTOR
What are equivalent replacements for IXBH12N300?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What makes the IXBH12N300 suitable for pulsed-power and medical imaging power supplies above 1000 V?
The IXBH12N300 is rated for a 3000 V collector-emitter voltage (VCES), which places it well above the capability of standard IGBTs that typically top out at 600 V or 1200 V. This high blocking voltage allows it to switch circuits operating directly from rectified mains voltages in 2× or 3× multiplier topologies used in X-ray generators and industrial pulse modulators, without requiring series-stacked lower-voltage devices.
Does the IXBH12N300 require an external freewheeling diode in an inverter bridge, and why?
No external freewheeling diode is needed because the IXBH12N300 includes a built-in anti-parallel diode in the same TO-247AD package. This integrated diode carries reverse inductive flyback current during the IGBT off-state in bridge inverter topologies, reducing the component count and PCB area compared to designs that use a discrete 3000 V diode externally, and it also simplifies thermal management since both devices share the same heatsink mounting surface.
What gate drive voltage and current are needed to fully switch the IXBH12N300 in a hard-switching topology?
The IXBH12N300 has a gate-emitter threshold voltage (VGE(th)) maximum of 5 V, so it begins to turn on at voltages above this level. For robust fully-on conduction, a positive gate voltage of +15 V is standard practice with IGBT gate drivers. Turning off the device reliably in high-voltage circuits typically requires a negative gate voltage of -5 V to -15 V to counteract Miller capacitance. The gate-emitter voltage must not exceed the ±20 V absolute maximum rating.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About IXYS SEMICONDUCTOR
IXYS SEMICONDUCTOR is a leading electronic component manufacturer. FindMyChip sources IXYS SEMICONDUCTOR ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from IXYS SEMICONDUCTOR
CPC1025NTR
Small Outline Packages
Relay or Contactor
IXFH20N100P
Transistor Outline, Vertical
MOSFET (N-Channel)
CLA60MT1200NHB
Transistor Outline, Vertical
Integrated Circuit
IXDN609SI
Small Outline Packages
Integrated Circuit
IXTK120N65X2
Transistor Outline, Vertical
MOSFET (N-Channel)
IXTK102N65X2
Transistor Outline, Vertical
MOSFET (N-Channel)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $48.0900 | $48.09 |
| 10+ | $36.6800 | $366.80 |
| 30+ | $32.4720 | $974.16 |
| 120+ | $31.6330 | $3795.96 |
| 300+ | $26.3400 | $7902.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
ACPL-W341-000E
Avago Technologies
Transistor IGBT
GT50JR22
Toshiba
Transistor IGBT
GT50J342,Q(O
Toshiba
Transistor IGBT
FGH25T120SMD_F155
ON Semiconductor
Transistor IGBT
AFGHL40T120RWD
onsemi
Transistor IGBT
IRGP4066DPBF
International Rectifier
Transistor IGBT
IRGP4062DPBF
International Rectifier
Transistor IGBT
IRGB4062DPBF
International Rectifier
Transistor IGBT
IRG4PC50UD-EPBF
International Rectifier
Transistor IGBT
NGTB30N120LWG
ON Semiconductor
Transistor IGBT
IRG7PH46UD-EP
Infineon
Transistor IGBT
IRG7PH42UPBF
Infineon
Transistor IGBT
FGI3040G2_F085
ON Semiconductor
Transistor IGBT
FGP3440G2_F085
ON Semiconductor
Transistor IGBT
IRGB20B60PD1PBF
Infineon
Transistor IGBT
IKW50N60T
Infineon
Transistor IGBT
RJH60F0DPQ-A0#T0
Renesas Electronics
Transistor IGBT
IKW30N65ES5
Infineon
Transistor IGBT
IKW75N65ES5
Infineon
Transistor IGBT
IRGS14C40LPBF
International Rectifier
Transistor IGBT
NGTB15N60S1EG
ON Semiconductor
Transistor IGBT
LM317BD2TG
ON Semiconductor
Transistor IGBT
GT40T101(AS)
Toshiba
Transistor IGBT
RGW80TS65DGC11
ROHM Semiconductor
Transistor IGBT