IXBH12N300 IXYS SEMICONDUCTOR Transistor IGBT (Transistor Outline, Vertical) In Stock
IXYS IXBH12N300 is a single IGBT with a built-in anti-parallel diode rated at 3000 V collector-emitter and 30 A collector current, housed in a TO-247AD vertical through-hole package. Available from stock with worldwide shipping.
- Manufacturer
- IXYS SEMICONDUCTOR
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- IXBH12N300 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $26.3400(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IXBH12N300?
- 3000 V (VCES) collector-emitter voltage rating for ultra-high-voltage power switching applications
- 30 A continuous collector current (IC) in a single-chip configuration with integrated anti-parallel diode
- Gate-emitter threshold voltage max of 5 V ensuring reliable drive from standard IGBT gate drivers
- Gate-emitter voltage max of 20 V compatible with conventional ±15 V bipolar gate drive circuits
- TO-247AD package with collector connection to case for direct heatsink mounting and superior thermal management
- RoHS-compliant (JESD-609 e3) for use in lead-free power electronics manufacturing
What is IXBH12N300 used for?
The IXBH12N300 is designed for ultra-high-voltage power switching applications such as pulsed power systems, high-voltage DC/DC converters, medical X-ray and CT scanner power supplies, and industrial plasma generation equipment operating at bus voltages up to 3000 V. Its integrated anti-parallel diode eliminates the need for an external freewheeling diode, simplifying circuit design in half-bridge and full-bridge inverter topologies. The TO-247AD through-hole package allows direct bolting to a heatsink, making it suitable for high-power designs that require efficient thermal management in harsh industrial environments.
What are the specifications of IXBH12N300?
| YTEOL | 3 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 30A |
| Collector-Emitter Voltage-Max | 3000V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 5V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247AD |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 160W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 720ns |
| Turn-on Time-Nom (ton) | 204ns |
| VCEsat-Max | 3.2V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Philippines |
Where can I find the IXBH12N300 datasheet?
IXBH12N300 Datasheet DownloadOfficial datasheet from IXYS SEMICONDUCTOR
What are equivalent replacements for IXBH12N300?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What makes the IXBH12N300 suitable for pulsed-power and medical imaging power supplies above 1000 V?
The IXBH12N300 is rated for a 3000 V collector-emitter voltage (VCES), which places it well above the capability of standard IGBTs that typically top out at 600 V or 1200 V. This high blocking voltage allows it to switch circuits operating directly from rectified mains voltages in 2× or 3× multiplier topologies used in X-ray generators and industrial pulse modulators, without requiring series-stacked lower-voltage devices.
Does the IXBH12N300 require an external freewheeling diode in an inverter bridge, and why?
No external freewheeling diode is needed because the IXBH12N300 includes a built-in anti-parallel diode in the same TO-247AD package. This integrated diode carries reverse inductive flyback current during the IGBT off-state in bridge inverter topologies, reducing the component count and PCB area compared to designs that use a discrete 3000 V diode externally, and it also simplifies thermal management since both devices share the same heatsink mounting surface.
What gate drive voltage and current are needed to fully switch the IXBH12N300 in a hard-switching topology?
The IXBH12N300 has a gate-emitter threshold voltage (VGE(th)) maximum of 5 V, so it begins to turn on at voltages above this level. For robust fully-on conduction, a positive gate voltage of +15 V is standard practice with IGBT gate drivers. Turning off the device reliably in high-voltage circuits typically requires a negative gate voltage of -5 V to -15 V to counteract Miller capacitance. The gate-emitter voltage must not exceed the ±20 V absolute maximum rating.
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Why Buy from FindMyChip
About IXYS SEMICONDUCTOR
IXYS SEMICONDUCTOR is a leading electronic component manufacturer. FindMyChip sources IXYS SEMICONDUCTOR ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $48.0900 | $48.09 |
| 10+ | $36.6800 | $366.80 |
| 30+ | $32.4720 | $974.16 |
| 120+ | $31.6330 | $3795.96 |
| 300+ | $26.3400 | $7902.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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