IXBH12N300 IXYS SEMICONDUCTOR Transistor IGBT (Transistor Outline, Vertical) In Stock

IXYS IXBH12N300 is a single IGBT with a built-in anti-parallel diode rated at 3000 V collector-emitter and 30 A collector current, housed in a TO-247AD vertical through-hole package. Available from stock with worldwide shipping.

NOT RECOMMENDEDTransistor IGBTVerified Jun 2026
Package / Visual Reference
IXBH12N300Transistor Outline, Vertical
Quick Facts
Manufacturer
IXYS SEMICONDUCTOR
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
NOT RECOMMENDED
Category
Transistor IGBT
Price
From $26.3400(MOQ 1)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 3000 V (VCES) collector-emitter voltage rating for ultra-high-voltage power switching applications
  • 30 A continuous collector current (IC) in a single-chip configuration with integrated anti-parallel diode
  • Gate-emitter threshold voltage max of 5 V ensuring reliable drive from standard IGBT gate drivers
  • Gate-emitter voltage max of 20 V compatible with conventional ±15 V bipolar gate drive circuits
  • TO-247AD package with collector connection to case for direct heatsink mounting and superior thermal management
  • RoHS-compliant (JESD-609 e3) for use in lead-free power electronics manufacturing

Applications

The IXBH12N300 is designed for ultra-high-voltage power switching applications such as pulsed power systems, high-voltage DC/DC converters, medical X-ray and CT scanner power supplies, and industrial plasma generation equipment operating at bus voltages up to 3000 V. Its integrated anti-parallel diode eliminates the need for an external freewheeling diode, simplifying circuit design in half-bridge and full-bridge inverter topologies. The TO-247AD through-hole package allows direct bolting to a heatsink, making it suitable for high-power designs that require efficient thermal management in harsh industrial environments.

Specifications

YTEOL3
Case ConnectionCOLLECTOR
Collector Current-Max (IC)30A
Collector-Emitter Voltage-Max3000V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max5V
Gate-Emitter Voltage-Max20V
JEDEC-95 CodeTO-247AD
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)160W
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)10
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
Turn-off Time-Nom (toff)720ns
Turn-on Time-Nom (ton)204ns
VCEsat-Max3.2V
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginPhilippines

Datasheet

IXBH12N300 Datasheet Download

Official datasheet from IXYS SEMICONDUCTOR

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What makes the IXBH12N300 suitable for pulsed-power and medical imaging power supplies above 1000 V?

The IXBH12N300 is rated for a 3000 V collector-emitter voltage (VCES), which places it well above the capability of standard IGBTs that typically top out at 600 V or 1200 V. This high blocking voltage allows it to switch circuits operating directly from rectified mains voltages in 2× or 3× multiplier topologies used in X-ray generators and industrial pulse modulators, without requiring series-stacked lower-voltage devices.

Does the IXBH12N300 require an external freewheeling diode in an inverter bridge, and why?

No external freewheeling diode is needed because the IXBH12N300 includes a built-in anti-parallel diode in the same TO-247AD package. This integrated diode carries reverse inductive flyback current during the IGBT off-state in bridge inverter topologies, reducing the component count and PCB area compared to designs that use a discrete 3000 V diode externally, and it also simplifies thermal management since both devices share the same heatsink mounting surface.

What gate drive voltage and current are needed to fully switch the IXBH12N300 in a hard-switching topology?

The IXBH12N300 has a gate-emitter threshold voltage (VGE(th)) maximum of 5 V, so it begins to turn on at voltages above this level. For robust fully-on conduction, a positive gate voltage of +15 V is standard practice with IGBT gate drivers. Turning off the device reliably in high-voltage circuits typically requires a negative gate voltage of -5 V to -15 V to counteract Miller capacitance. The gate-emitter voltage must not exceed the ±20 V absolute maximum rating.

Related Guides

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About IXYS SEMICONDUCTOR

IXYS SEMICONDUCTOR is a leading electronic component manufacturer. FindMyChip sources IXYS SEMICONDUCTOR ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

AvailabilityIn Stock
Reference Price (USD)
From $26.3400
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$48.0900$48.09
10+$36.6800$366.80
30+$32.4720$974.16
120+$31.6330$3795.96
300+$26.3400$7902.00
pcs
Unit price: $48.0900 · Total: $48.09

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy