STG40H65FBD7 STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The STMicroelectronics STG40H65FBD7 is a 650V 40A N-channel trench-gate field-stop IGBT with co-packaged ultrafast soft-recovery diode in a TO-247 vertical package. Available from stock worldwide with competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STG40H65FBD7 Datasheet PDF
- Category
- Transistor IGBT
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650V collector-emitter voltage breakdown with 40A continuous collector current rating enabling robust switching in high-power inverter stages
- Trench-gate field-stop technology delivers low VCEsat of approximately 2.0V at 25°C, minimizing conduction losses in motor-drive and solar-inverter applications
- Integrated co-packaged ultrafast soft-recovery anti-parallel diode reduces reverse-recovery charge Qrr and suppresses voltage overshoot during high-frequency switching
- Low switching losses at operating frequencies up to 20 kHz make the STG40H65FBD7 efficient in resonant and hard-switching topologies
- TO-247 vertical package with isolated mounting provides high thermal dissipation and easy heatsink attachment for thermal management up to 150°C junction temperature
Applications
The STG40H65FBD7 is optimized for three-phase motor-drive inverters and variable-frequency drives in industrial machinery, where 650V blocking voltage and 40A continuous current support motors rated up to approximately 11 kW at 400V AC. Its integrated soft-recovery diode and low switching losses also make it effective in single-phase and three-phase solar micro-inverters and UPS systems operating at switching frequencies between 8 kHz and 20 kHz. The rugged TO-247 package and 150°C junction temperature rating ensure reliable operation in enclosed power conversion equipment subject to elevated ambient temperatures.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage and current ratings define the STG40H65FBD7 for industrial inverter design?
The STG40H65FBD7 is rated for 650V collector-emitter breakdown voltage and 40A continuous collector current at a case temperature of 25°C, with a pulsed peak current capability of 80A. These ratings make it suitable for three-phase inverter bridges supplying motors up to approximately 11 kW from a 400V AC grid, where the DC bus voltage reaches 560V and transient switching spikes must be absorbed within the 650V rating with appropriate gate resistance and snubber design.
How does the trench-gate field-stop structure in the STG40H65FBD7 reduce conduction losses compared to planar IGBTs?
Trench-gate technology concentrates the channel region within a narrow vertical trench, reducing cell pitch and increasing current density per unit die area. Combined with the field-stop layer that terminates the depletion region before reaching the collector, this structure achieves a VCEsat of approximately 2.0V at 25°C and 40A—roughly 15% to 20% lower than comparable planar IGBTs at the same current, translating directly to lower conduction power loss in continuous-duty motor-drive applications.
Why is the integrated co-packaged diode in the STG40H65FBD7 preferred over discrete freewheeling diodes in a 20 kHz inverter?
The co-packaged ultrafast soft-recovery diode minimizes reverse-recovery charge Qrr, typically in the range of 400 nC to 800 nC at 25°C, which directly reduces the spike current that flows through the complementary IGBT during each switching transition. At 20 kHz switching frequency, lower Qrr reduces recovery-related switching losses by 20% to 40% compared to standard fast-recovery diodes, while the soft-recovery waveform suppresses voltage ringing and associated EMI that would otherwise require larger snubber capacitors.
What thermal management approach suits the STG40H65FBD7 in a variable-frequency drive rated at 7.5 kW?
The TO-247 package presents a junction-to-case thermal resistance (RθJC) of approximately 0.5°C/W to 0.7°C/W for the IGBT. In a 7.5 kW VFD with total device losses of around 60W per switch at full load, a heatsink with thermal resistance below 1.5°C/W mounted with thermally conductive pad at 0.2°C/W keeps the junction below 125°C at a 40°C ambient, providing adequate margin below the 150°C absolute maximum junction temperature and ensuring long-term reliability.
In what scenario would an engineer select STG40H65FBD7 over a SiC MOSFET for a solar inverter design?
At switching frequencies below 20 kHz, the STG40H65FBD7's lower unit cost—typically 40% to 60% less than an equivalent 650V SiC MOSFET—makes it the economically preferred choice for string inverters with output power of 5 kW to 10 kW where efficiency targets of 97% can be met with IGBT technology. SiC MOSFETs become the better option only when the switching frequency exceeds 30 kHz or when the design prioritizes minimal heatsink volume, since their lower switching losses justify the higher device cost through savings in magnetics and thermal management hardware.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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