STGWA80H65FBAG STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGWA80H65FBAG is an AEC-Q101 automotive-grade 650 V 80 A trench gate field-stop IGBT in TO-247 long-leads package, designed for high-speed half-bridge motor drives and on-board chargers in electric vehicles.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGWA80H65FBAG Datasheet PDF
- Category
- Transistor IGBT
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- AEC-Q101 automotive-grade qualification enabling use in 650 V 80 A EV powertrain inverters and on-board chargers
- Trench gate field-stop technology minimizes switching losses for high-frequency HB operation up to hundreds of kHz
- TO-247 long-leads package provides low thermal resistance for high-power 80 A continuous collector current applications
Applications
The STGWA80H65FBAG is engineered for automotive electric vehicle powertrains, on-board battery chargers, and DC-DC converters requiring AEC-Q101 qualification at 650 V blocking voltage and 80 A continuous current. Its high-speed switching characteristics also suit industrial motor drives, solar inverters, and UPS systems where efficiency at elevated switching frequencies from 10 kHz to 50 kHz is critical.
Specifications
| YTEOL | 8 |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STGWA80H65FBAG:
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, TO-247
Frequently Asked Questions
What are the voltage and current ratings of the STGWA80H65FBAG for use in EV inverter designs?
The STGWA80H65FBAG is rated at 650 V collector-emitter voltage (VCES) and 80 A continuous collector current (IC). These ratings make it suitable for 400 V DC-bus automotive inverter stages in battery electric vehicles, where typical DC bus voltages range from 300 V to 450 V.
How does the trench gate field-stop technology in the STGWA80H65FBAG improve switching efficiency?
The trench gate field-stop structure reduces the saturation voltage (VCE(sat)) and total switching energy (Eoff) compared to planar gate IGBTs at 650 V. This allows the STGWA80H65FBAG to operate efficiently at switching frequencies from 10 kHz to 50 kHz in half-bridge topologies, reducing thermal losses in automotive motor control applications.
Is the STGWA80H65FBAG qualified for use in safety-critical automotive power electronics?
Yes. The STGWA80H65FBAG carries AEC-Q101 Grade 1 automotive qualification, covering operation from -40°C to 175°C junction temperature. This makes it suitable for underhood automotive applications such as traction inverters, on-board chargers rated at 80 A, and 12 V to 48 V DC-DC converters in hybrid and electric vehicles.
What package does the STGWA80H65FBAG use and what are its thermal advantages?
The STGWA80H65FBAG is housed in a TO-247 long-leads through-hole package with exposed metal tab for heatsink mounting. The long-lead TO-247 provides low junction-to-case thermal resistance, enabling effective heat dissipation at 80 A continuous operation, and the through-hole pins allow direct bolted connection to bus bars in high-power automotive and industrial converter assemblies.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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