STGB30V60DF STMicroelectronics Transistor IGBT (Other) In Stock
STMicroelectronics STGB30V60DF is a 600 V 30 A V-series trench gate field-stop IGBT with a built-in fast anti-parallel diode for very high-speed switching in power inverter and motor drive circuits. Packaged in TO-263AB (D2PAK) with 60 A peak collector current rating and 20 V gate-emitter limit. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGB30V60DF Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.0696(MOQ 10)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V collector-emitter voltage (VCES) and 30 A rated collector current (IC) with 60 A peak IC, enabling robust high-voltage power switching in motor drives and inverters
- V-series trench gate field-stop technology delivering very high switching speed with low switching losses, ideal for high-frequency PWM operation above 20 kHz
- Integrated fast anti-parallel freewheeling diode (DF suffix) eliminates external diode BOM components and reduces parasitic inductance in half-bridge power stage layouts
Applications
The STGB30V60DF is designed for use in variable-speed motor drives, solar inverters, and uninterruptible power supplies (UPS) requiring 600 V class switching at currents up to 30 A. Its very high switching speed and built-in freewheeling diode make it well suited for high-frequency PWM half-bridge and full-bridge converter topologies operating above 20 kHz. The TO-263AB surface-mount package simplifies thermal management and PCB layout for compact power electronics designs.
Specifications
| Factory Lead Time | 15Weeks |
| YTEOL | 5.4 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 60A |
| Collector-Emitter Voltage-Max | 600V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 225ns |
| Turn-on Time-Nom (ton) | 59ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STGB30V60DF IGBT?
The STGB30V60DF is rated for 600 V collector-emitter voltage (VCES), 30 A continuous collector current (IC), and 60 A peak collector current, with a maximum gate-emitter voltage of 20 V. These ratings suit half-bridge and full-bridge motor drive designs in the 1 kW to 5 kW power range.
Does the STGB30V60DF include a freewheeling diode, and how does that simplify motor drive PCB design?
Yes, the STGB30V60DF integrates a built-in fast anti-parallel freewheeling diode (DF suffix). This eliminates the need for external diode components in each switch position of a 3-phase motor inverter bridge, reducing component count by up to 6 diodes per inverter, lowering parasitic inductance and simplifying PCB layout.
At what switching frequencies can the STGB30V60DF operate reliably in a PWM motor drive?
The STGB30V60DF belongs to ST's V-series very high-speed IGBT family, optimized for PWM switching frequencies from 20 kHz up to approximately 40 kHz. Its trench gate field-stop structure minimizes turn-off switching losses (Eoff) at these frequencies, enabling efficient motor control with reduced heat sink size compared to slower IGBT alternatives.
Which package does the STGB30V60DF use and how does it affect thermal management in a power module?
The STGB30V60DF uses the TO-263AB (D2PAK) surface-mount package, which provides direct heatsink contact through the exposed collector tab on the PCB bottom layer. The TO-263AB thermal resistance (junction-to-case) is typically below 1.5°C/W, allowing the IGBT to dissipate sufficient power at 30 A and 600 V switching in convection-cooled or heatsink-mounted SMT power board designs.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $2.2900 | $22.90 |
| 100+ | $1.6100 | $161.00 |
| 500+ | $1.3000 | $650.00 |
| 2000+ | $1.1473 | $2294.50 |
| 3000+ | $1.1054 | $3316.14 |
| 4000+ | $1.0696 | $4278.52 |
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