SQ2309ES-T1_GE3 Vishay MOSFET (P-Channel) (SOT23 (3-Pin)) In Stock
The Vishay SQ2309ES-T1_GE3 is a P-channel MOSFET in SOT-23 (3-pin) surface-mount package rated at 60 V with 1.7 A maximum drain current. Featuring a low on-resistance of 0.335 Ω and integrated avalanche protection (2.3 mJ), this trench MOSFET is optimized for low-power switching applications, load control, and high-side gate-drive circuits in consumer and industrial equipment.
- Manufacturer
- Vishay
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SQ2309ES-T1_GE3 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.1288(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SQ2309ES-T1_GE3?
- P-channel TRENCH MOSFET technology for low on-resistance (0.335 Ω max)
- 60 V breakdown rating with 1.7 A drain current capacity
- Built-in avalanche energy protection (2.3 mJ) and integral freewheeling diode
- Compact SOT-23 (3-pin) package for space-constrained PCB designs
What is SQ2309ES-T1_GE3 used for?
Widely used in battery charger circuits, load switches, USB power delivery systems, and motor control applications where P-channel switching is required. Common in consumer electronics power-path management, LED dimming circuits, and industrial relay-replacement designs where low quiescent current and integration are valued.
What are the specifications of SQ2309ES-T1_GE3?
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 2.3mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 1.7A |
| Drain-source On Resistance-Max | 0.335Ω |
| FET Technology | TRENCH MOSFET |
| Feedback Cap-Max (Crss) | 30pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 6.8A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 32ns |
| Turn-on Time-Max (ton) | 22ns |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the SQ2309ES-T1_GE3 datasheet?
SQ2309ES-T1_GE3 Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for SQ2309ES-T1_GE3?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What on-resistance and drain current rating makes the SQ2309ES-T1_GE3 suitable for USB power-path load switching?
The SQ2309ES-T1_GE3 offers a maximum on-resistance of 0.335 Ω at 1.7 A drain current with a 60 V rating, allowing designers to build efficient USB power-path switches with minimal voltage drop and thermal dissipation in 5 V and 12 V charging circuits.
How does the SOT-23 package footprint compare in size to older TO-92 packaging for board density?
The SQ2309ES-T1_GE3 comes in a compact SOT-23 (3-pin) surface-mount package, occupying roughly 1/10th the board area of through-hole TO-92 packages, making it ideal for modern smartphone chargers, portable power banks, and hand-held industrial tools requiring high-density layouts.
Is the built-in avalanche protection on the SQ2309ES-T1_GE3 sufficient for automotive inductive load switching without external snubbers?
Yes. The SQ2309ES-T1_GE3 includes integrated avalanche diode protection rated at 2.3 mJ and a 60 V breakdown rating, allowing designers to operate in motor-control and relay-replacement circuits without adding separate transient protection in many consumer and light-duty automotive applications.
What is the typical application fit for a P-channel MOSFET like SQ2309ES-T1_GE3 in battery management systems?
P-channel MOSFETs like the SQ2309ES-T1_GE3 are widely chosen as high-side load switches in battery charger circuits where gate-drive simplicity is valued; the 1.7 A rating and 0.335 Ω on-resistance make it suitable for 1-2 A branch currents in multi-cell battery balancing and USB PD systems.
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Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9300 | $0.93 |
| 100+ | $0.2650 | $26.50 |
| 500+ | $0.2470 | $123.50 |
| 1350+ | $0.1486 | $200.61 |
| 1745+ | $0.1436 | $250.58 |
| 2330+ | $0.1288 | $300.10 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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