SQ2361AEES-T1_GE3 Vishay MOSFET (P-Channel) (SOT23 (3-Pin)) In Stock
The SQ2361AEES-T1_GE3 is a Vishay P-channel MOSFET rated at -60 V with -2.8 A drain current maximum, housed in SOT23. This device features 0.17 Ω on-resistance and 8.4 mJ avalanche energy, making it suitable for automotive switching applications. Find SQ2361AEES-T1_GE3 in stock worldwide with fast shipping and competitive pricing.
- Manufacturer
- Vishay
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SQ2361AEES-T1_GE3 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.2203(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-channel MOSFET with ±60 V rating suitable for automotive applications
- Low on-resistance at 0.17 Ω maximum for efficient switching
- Integrated diode with 8.4 mJ avalanche energy for robust protection
Applications
The SQ2361AEES-T1_GE3 is ideal for automotive power switching circuits, battery management systems, and motor control applications requiring reliable reverse polarity protection. Its low on-resistance and integrated diode make it suitable for high-efficiency switching regulators and load switches in automotive environments. The SOT23 package enables compact PCB designs in space-constrained automotive modules.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 8.4mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 2.8A |
| Drain-source On Resistance-Max | 0.17Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 45pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 11A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 36ns |
| Turn-on Time-Max (ton) | 24ns |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain current rating of the SQ2361AEES-T1_GE3 P-channel MOSFET?
The SQ2361AEES-T1_GE3 has a maximum drain current of -2.8 A and features a drain-source on-resistance of 0.17 Ω at rated conditions. This low on-resistance combined with the -60 V rating makes it suitable for power switching applications requiring efficient current handling in automotive circuits.
For automotive battery switch designs, how does the SQ2361AEES-T1_GE3 compare to higher-current alternatives?
The SQ2361AEES-T1_GE3 is optimized for lower-current automotive applications (-2.8 A maximum), offering a 0.17 Ω on-resistance in the compact SOT23 package. If your design requires higher current capacity (above 5 A), consider alternatives like SQ2367 series that provide up to 10 A current ratings while maintaining similar voltage ratings and package options.
What is the package size and pin count for this Vishay P-channel MOSFET?
The SQ2361AEES-T1_GE3 is housed in a SOT23 (3-pin) package following JEDEC-95 TO-236AB and JESD-30 R-PDSO-G3 specifications. The 3-pin configuration includes gate, drain, and source connections, making it ideal for compact automotive modules where board space is limited.
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About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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MOSFET (P-Channel)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0000 | $2.00 |
| 100+ | $0.3900 | $39.00 |
| 500+ | $0.3600 | $180.00 |
| 840+ | $0.2383 | $200.17 |
| 1095+ | $0.2293 | $251.08 |
| 1365+ | $0.2203 | $300.71 |
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