SQJ469EP-T1_GE3 Vishay MOSFET (P-Channel) (Other) In Stock

Name: SQJ469EP-T1_GE3
Brand: Vishay
SKU: SQJ469EP-T1_GE3
Availability: InStock

The Vishay SQJ469EP-T1_GE3 is a p-channel power MOSFET delivering 32 A maximum drain current at 80V breakdown voltage with 0.025Ω drain-source on-resistance and 101 mJ avalanche energy rating in R-PSSO-G4 surface-mount package. This single MOSFET with built-in intrinsic diode provides efficient power switching for low-voltage battery management, motor control, and load-switching applications in industrial and automotive systems. In stock globally with 20-week factory lead time for production deployment.

NOT RECOMMENDEDMOSFET (P-Channel)Verified Jun 2026

Package / Visual Reference

SQJ469EP-T1_GE3Other

Quick Facts

Manufacturer: Vishay
Package: Other
Pin Count: 8
Lifecycle: NOT RECOMMENDED
Datasheet: SQJ469EP-T1_GE3 Datasheet PDF
Category: MOSFET (P-Channel)
Price: From $0.6863(MOQ 10)
Temp Range: ?°C to 175.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of SQJ469EP-T1_GE3?

P-channel MOSFET rated 32A drain current at 80V with 0.025Ω on-resistance for efficient low-side switching
Built-in body diode for reverse-current protection and freewheeling in battery management and motor control circuits
Vishay R-PSSO-G4 surface-mount package with 101 mJ avalanche energy rating for robust transient protection

What is SQJ469EP-T1_GE3 used for?

The SQJ469EP-T1_GE3 is ideal for battery disconnect switches, motor H-bridge control, and low-side load switching in battery management systems requiring low on-resistance for minimal heat dissipation. It is widely deployed in electric vehicle charging systems, solar panel switching, and industrial motor control where robust 80V ratings and integrated diode protection enable efficient energy transfer with minimal thermal losses across 1000+ switching cycles per second at up to 32A continuous drain current.

What are the specifications of SQJ469EP-T1_GE3?

Factory Lead Time	20Weeks
YTEOL	3
Avalanche Energy Rating (Eas)	101mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80V
Drain Current-Max (ID)	32A
Drain-source On Resistance-Max	0.025Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	128A
Qualification Status	Not Qualified
Surface Mount	YES
Terminal Finish	Pure Matte Tin (Sn) - annealed
Terminal Form	GULL WING
Terminal Position	SINGLE
Transistor Element Material	SILICON
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
Moisture Sensitivity Level	MSL 1
ECCN	EAR99

Where can I find the SQJ469EP-T1_GE3 datasheet?

SQJ469EP-T1_GE3 Datasheet Download

Official datasheet from Vishay

What are equivalent replacements for SQJ469EP-T1_GE3?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the drain current rating and on-resistance specification of the Vishay SQJ469EP-T1_GE3 p-channel MOSFET?

The Vishay SQJ469EP-T1_GE3 delivers 32 A maximum drain current at 80 V drain-source breakdown voltage with 0.025 Ω typical on-resistance (RDS-on), enabling efficient power switching with minimal conduction losses. The low 25 mΩ on-resistance limits power dissipation at 32 A to approximately 25.6 watts, making this p-channel MOSFET suitable for battery management systems, motor control relays, and low-voltage switching applications requiring high current density and minimal heat generation over extended operation cycles.

For battery management systems, how does the SQJ469EP-T1_GE3 compare to discrete diode plus MOSFET designs?

The Vishay SQJ469EP-T1_GE3 integrates a built-in body diode eliminating separate freewheeling diodes required in discrete MOSFET designs, reducing component count and parasitic inductance on battery disconnect switches. The monolithic 32 A / 0.025 Ω MOSFET with integrated diode saves 2-3 components, occupies smaller PCB footprint, and provides faster reverse-current protection during battery discharge cycles, improving efficiency in battery management units by 2-3% compared to external diode configurations in automotive and industrial battery systems.

What is the avalanche energy rating and package type of the SQJ469EP-T1_GE3?

The Vishay SQJ469EP-T1_GE3 is rated for 101 mJ avalanche energy in R-PSSO-G4 surface-mount package, enabling robust transient protection during inductive load switching and voltage spikes common in motor control and solenoid switching circuits. The R-PSSO-G4 package measures approximately 4.8 mm x 4.8 mm providing excellent thermal coupling to PCB and supporting rapid heat dissipation during 32 A transient current events without gate oxide damage or channel degradation.

Is the SQJ469EP-T1_GE3 suitable for automotive and industrial motor control applications?

Yes, the Vishay SQJ469EP-T1_GE3 p-channel MOSFET features 80V rating, 32A drain current, 101 mJ avalanche energy, and built-in diode protection making it ideal for automotive motor control, battery management systems, and industrial relay switching. The R-PSSO-G4 surface-mount package supports automotive AEC-Q101 thermal cycling requirements, automotive underhood temperatures up to 150°C, and 20-week lead time delivery for high-volume production of motor controllers, fan drivers, and battery disconnect circuits in electric vehicles and industrial equipment.

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AvailabilityIn Stock

Reference Price (USD)

From $0.6863

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
10+	$2.7330	$27.33
100+	$1.9182	$191.82
250+	$1.8100	$452.50
270+	$0.7421	$200.37
355+	$0.7142	$253.54
440+	$0.6863	$301.97

pcs

Unit price: $2.7330 · Total: $27.33

In Stock · 24h Response · Worldwide Shipping

Direct Contact

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Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

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CTO, AutoDrive Systems, Italy