SQJ469EP-T1_GE3 Vishay MOSFET (P-Channel) (Other) In Stock
The Vishay SQJ469EP-T1_GE3 is a p-channel power MOSFET delivering 32 A maximum drain current at 80V breakdown voltage with 0.025Ω drain-source on-resistance and 101 mJ avalanche energy rating in R-PSSO-G4 surface-mount package. This single MOSFET with built-in intrinsic diode provides efficient power switching for low-voltage battery management, motor control, and load-switching applications in industrial and automotive systems. In stock globally with 20-week factory lead time for production deployment.
- Manufacturer
- Vishay
- Package
- Other
- Pin Count
- 8
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- SQJ469EP-T1_GE3 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.6863(MOQ 10)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-channel MOSFET rated 32A drain current at 80V with 0.025Ω on-resistance for efficient low-side switching
- Built-in body diode for reverse-current protection and freewheeling in battery management and motor control circuits
- Vishay R-PSSO-G4 surface-mount package with 101 mJ avalanche energy rating for robust transient protection
Applications
The SQJ469EP-T1_GE3 is ideal for battery disconnect switches, motor H-bridge control, and low-side load switching in battery management systems requiring low on-resistance for minimal heat dissipation. It is widely deployed in electric vehicle charging systems, solar panel switching, and industrial motor control where robust 80V ratings and integrated diode protection enable efficient energy transfer with minimal thermal losses across 1000+ switching cycles per second at up to 32A continuous drain current.
Specifications
| Factory Lead Time | 20Weeks |
| YTEOL | 3 |
| Avalanche Energy Rating (Eas) | 101mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 80V |
| Drain Current-Max (ID) | 32A |
| Drain-source On Resistance-Max | 0.025Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 128A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Pure Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain current rating and on-resistance specification of the Vishay SQJ469EP-T1_GE3 p-channel MOSFET?
The Vishay SQJ469EP-T1_GE3 delivers 32 A maximum drain current at 80 V drain-source breakdown voltage with 0.025 Ω typical on-resistance (RDS-on), enabling efficient power switching with minimal conduction losses. The low 25 mΩ on-resistance limits power dissipation at 32 A to approximately 25.6 watts, making this p-channel MOSFET suitable for battery management systems, motor control relays, and low-voltage switching applications requiring high current density and minimal heat generation over extended operation cycles.
For battery management systems, how does the SQJ469EP-T1_GE3 compare to discrete diode plus MOSFET designs?
The Vishay SQJ469EP-T1_GE3 integrates a built-in body diode eliminating separate freewheeling diodes required in discrete MOSFET designs, reducing component count and parasitic inductance on battery disconnect switches. The monolithic 32 A / 0.025 Ω MOSFET with integrated diode saves 2-3 components, occupies smaller PCB footprint, and provides faster reverse-current protection during battery discharge cycles, improving efficiency in battery management units by 2-3% compared to external diode configurations in automotive and industrial battery systems.
What is the avalanche energy rating and package type of the SQJ469EP-T1_GE3?
The Vishay SQJ469EP-T1_GE3 is rated for 101 mJ avalanche energy in R-PSSO-G4 surface-mount package, enabling robust transient protection during inductive load switching and voltage spikes common in motor control and solenoid switching circuits. The R-PSSO-G4 package measures approximately 4.8 mm x 4.8 mm providing excellent thermal coupling to PCB and supporting rapid heat dissipation during 32 A transient current events without gate oxide damage or channel degradation.
Is the SQJ469EP-T1_GE3 suitable for automotive and industrial motor control applications?
Yes, the Vishay SQJ469EP-T1_GE3 p-channel MOSFET features 80V rating, 32A drain current, 101 mJ avalanche energy, and built-in diode protection making it ideal for automotive motor control, battery management systems, and industrial relay switching. The R-PSSO-G4 surface-mount package supports automotive AEC-Q101 thermal cycling requirements, automotive underhood temperatures up to 150°C, and 20-week lead time delivery for high-volume production of motor controllers, fan drivers, and battery disconnect circuits in electric vehicles and industrial equipment.
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About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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MOSFET (P-Channel)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $2.7330 | $27.33 |
| 100+ | $1.9182 | $191.82 |
| 250+ | $1.8100 | $452.50 |
| 270+ | $0.7421 | $200.37 |
| 355+ | $0.7142 | $253.54 |
| 440+ | $0.6863 | $301.97 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”