SQD50P08-25L_GE3 Vishay MOSFET (P-Channel) (Other) In Stock
The SQD50P08-25L_GE3 is a P-channel MOSFET with 50 A maximum drain current and 80 V breakdown voltage, featuring ultra-low on-resistance of 0.025 Ω and avalanche energy rating of 100 mJ. This halogen-free, RoHS-compliant TO-252 package device integrates a built-in diode for efficient switching applications. Available in stock with worldwide shipping.
- Manufacturer
- Vishay
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SQD50P08-25L_GE3 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $1.0748(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low drain-source on-resistance of 0.025 Ω for minimal power dissipation
- High avalanche energy rating (100 mJ) enables robust ESD protection
- Halogen-free and RoHS-compliant packaging for environmental compliance
Applications
The SQD50P08-25L_GE3 is ideal for low-voltage switching applications, DC-DC converter power stages, and load-switch designs requiring efficient P-channel gate drive. Its built-in diode and compact TO-252 package make it suitable for battery management systems and portable device power rails.
Specifications
| YTEOL | 5.85 |
| Avalanche Energy Rating (Eas) | 100mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 80V |
| Drain Current-Max (ID) | 50A |
| Drain-source On Resistance-Max | 0.025Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and on-resistance specification for the SQD50P08-25L_GE3?
The SQD50P08-25L_GE3 delivers a maximum drain current of 50 A with an ultra-low drain-source on-resistance of only 0.025 Ω, enabling efficient power delivery in switching applications with minimal heat generation and improved overall system efficiency.
Which low-voltage power management applications benefit from this P-channel MOSFET's avalanche energy rating?
With an avalanche energy rating of 100 mJ and 80 V breakdown voltage, this device is well-suited for DC-DC converters, battery charging circuits, and load-switch applications requiring robustness against transient overvoltage conditions in 3.3 V to 12 V systems.
How does the TO-252 package and halogen-free construction affect PCB layout and supply chain reliability?
The TO-252 (R-PSSO-G2) package provides compact footprint suitable for space-constrained designs, while halogen-free and RoHS-compliant construction ensures regulatory compliance across automotive and industrial sectors with worldwide supplier availability.
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About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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MOSFET (P-Channel)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2160 | $1.22 |
| 255+ | $1.1795 | $300.77 |
| 4000+ | $1.1157 | $4462.72 |
| 6000+ | $1.1138 | $6682.50 |
| 8000+ | $1.0803 | $8642.72 |
| 16000+ | $1.0748 | $17196.32 |
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