STMicroelectronics

STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

12,106

Total Products

54

Categories

All STMicroelectronics Components

Showing 1,351–1,400 of 12,106

STFU26N60M2Transistor Outline, Vertical
STFU26N60M2MOSFET (N-Channel)

N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

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STI33N60M2Transistor Outline, Vertical
STI33N60M2MOSFET (N-Channel)

I2PAK-3

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STB24N65M2Other
STB24N65M2MOSFET (N-Channel)

N‑channel 650 V, 185 mΩ typ., 16 A MDmesh M2 Power MOSFET in a D²PAK and TO-220FP packages

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STL15N60M2-EPOther
STL15N60M2-EPIntegrated Circuit

N-channel 600 V, 0.390 Ω typ., 7 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

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STF24N65M2Transistor Outline, Vertical
STF24N65M2MOSFET (N-Channel)

N‑channel 650 V, 185 mΩ typ., 16 A MDmesh M2 Power MOSFET in a D²PAK and TO-220FP packages

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STFU18N60M2Transistor Outline, Vertical
STFU18N60M2MOSFET (N-Channel)

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

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STD80N240K6Other
STD80N240K6MOSFET (N-Channel)

N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

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STP20N60M2-EPTransistor Outline, Vertical
STP20N60M2-EPMOSFET (N-Channel)

STMicroelectronics STP20N60M2-EP is an N-channel 600 V MDmesh M2 Power MOSFET with 13 A drain current, 0.230 Ω typical on-resistance, and avalanche rating of 138 mJ in a TO-220 package. Designed for high-efficiency power conversion. Available in stock with worldwide shipping.

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STL28N60M2Other
STL28N60M2MOSFET (N-Channel)

N-channel 600 V, 0.140 Ohm typ., 19 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

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STWA20N95K5Transistor Outline, Vertical
STWA20N95K5MOSFET (N-Channel)

Use the download button to access the STWA20N95K5 schematic symbol, PCB footprint, and 3D model.

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STP35N60M2-EPTransistor Outline, Vertical
STP35N60M2-EPMOSFET (N-Channel)

N-channel 600 V, 0.110 Ohm typ., 26 A MDmesh M2 Power MOSFET in TO-220 package

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STF13N60M2(045Y)Transistor Outline, Vertical
STF13N60M2(045Y)MOSFET (N-Channel)

STF13N60M2(045Y) is an N-channel 600 V MDmesh M2 Power MOSFET rated at 11 A continuous drain current with 0.35 Ohm typical RDS(on). Housed in a TO-220FP narrow leads package, it delivers low switching losses and high efficiency for power conversion designs.

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STD52P3LLH6Other
STD52P3LLH6MOSFET (P-Channel)

Use the download button to access the STD52P3LLH6 schematic symbol and PCB footprint.

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STB14N80K5Other
STB14N80K5MOSFET (N-Channel)

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a D2PAK package

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STP23N80K5Transistor Outline, Vertical
STP23N80K5MOSFET (N-Channel)

N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-220 package

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STWA20N95DK5Transistor Outline, Vertical
STWA20N95DK5MOSFET (N-Channel)

N-channel 950 V, 275 mΩ typ., 18 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages

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STL19N3LLH6AGOther
STL19N3LLH6AGMOSFET (N-Channel)

Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package

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STP7N105K5Transistor Outline, Vertical
STP7N105K5MOSFET (N-Channel)

Use the download button to access the STP7N105K5 schematic symbol, PCB footprint, and 3D model.

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STP5N105K5Transistor Outline, Vertical
STP5N105K5Integrated Circuit

Use the download button to access the STP5N105K5 schematic symbol, PCB footprint, and 3D model.

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STFW12N120K5Transistor Outline, Vertical
STFW12N120K5MOSFET (N-Channel)

Use the download button to access the STFW12N120K5 schematic symbol, PCB footprint, and 3D model.

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STP2N105K5Transistor Outline, Vertical
STP2N105K5MOSFET (N-Channel)

Use the download button to access the STP2N105K5 schematic symbol, PCB footprint, and 3D model.

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STP14N80K5Transistor Outline, Vertical
STP14N80K5MOSFET (N-Channel)

Use the download button to access the STP14N80K5 schematic symbol, PCB footprint, and 3D model.

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STF5N105K5Transistor Outline, Vertical
STF5N105K5MOSFET (N-Channel)

Use the download button to access the STF5N105K5 schematic symbol, PCB footprint, and 3D model.

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STF5N80K5Transistor Outline, Vertical
STF5N80K5MOSFET (N-Channel)

STMicroelectronics STF5N80K5 is an N-channel 800 V MDmesh K5 Power MOSFET rated 4 A with 1.50 Ω typical RDS(on) in a TO-220FP isolated package. Designed for high-voltage switching with avalanche energy rating of 165 mJ.

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STB10N95K5Other
STB10N95K5MOSFET (N-Channel)

ROHS COMPLIANT, TO-220, 3 PIN

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STU2N105K5Transistor Outline, Vertical
STU2N105K5MOSFET (N-Channel)

Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected

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STU5N80K5Transistor Outline, Vertical
STU5N80K5MOSFET (N-Channel)

N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in an IPAK package

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STU5N95K5Other
STU5N95K5MOSFET (N-Channel)

STMicroelectronics STU5N95K5 is an N-channel MOSFET rated at 950 V and 3.5 A with 70 W power dissipation, featuring avalanche energy rating of 70 mJ and 2.5 Ω on-resistance. Housed in a TO-251 (IPAK) through-hole package, it operates from -55°C to 150°C. Available in stock worldwide for immediate high-voltage power design procurement.

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STP70NS04ZCTransistor Outline, Vertical
STP70NS04ZCIntegrated Circuit

The STMicroelectronics STP70NS04ZC is an N-channel power MOSFET rated at 40 V and 80 A continuous drain current with a 5 mΩ typical on-resistance in a TO-220AB package. It features avalanche energy rating of 720 mJ, an integrated clamp diode, and is optimized for low-loss DC motor drive and synchronous rectification. Available worldwide with fast shipping for high-current switching designs.

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STFU14N80K5Transistor Outline, Vertical
STFU14N80K5MOSFET (N-Channel)

N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package

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STLD257N4F7AGOther
STLD257N4F7AGMOSFET (N-Channel)

Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 dual side cooling package

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STP180NS04ZCTransistor Outline, Vertical
STP180NS04ZCMOSFET (N-Channel)

N-channel 40 V clamped 3.6 mOhm typ., 120 A fully protected SAFeFET(TM) Power MOSFET in a TO-220 package

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STL210N4LF7AGOther
STL210N4LF7AGMOSFET (N-Channel)

Automotive N-channel 40 V, 1.35 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

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FDA450LVQuad Flat Packages
FDA450LVIntegrated Circuit

4 x 50 W PWM digital input power amplifier with built-in diagnostics features and low voltage operation

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STL210N4F7Other
STL210N4F7MOSFET (N-Channel)

N-channel 40 V, 1.05 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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STD95N4LF3Other
STD95N4LF3MOSFET (N-Channel)

ROHS COMPLIANT, DPAK-3

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STL35N75LF3Other
STL35N75LF3Integrated Circuit

N-channel 75 V, 20 mOhm typ., 35 A STripFET F3 Power MOSFET in a PowerFLAT 3.3x3.3 package

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STP70NF03LTransistor Outline, Vertical
STP70NF03LMOSFET (N-Channel)

STMicroelectronics STP70NF03L is an N-channel StripFET MOSFET rated at 30 V, 70 A, with an ultra-low 0.008 Ω on-resistance in a TO-220 package. Available in stock with worldwide shipping.

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STB80NF55-06TOther
STB80NF55-06TMOSFET (N-Channel)

STMicroelectronics STB80NF55-06T is an N-channel STripFET II power MOSFET rated at 55 V, 80 A with an ultra-low 5 mΩ (typ.) RDS(on) in a D2PAK package. It features a 1300 mJ avalanche energy rating and built-in fast body diode for robust switching performance. Available from authorized distributors with worldwide shipping.

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STA8089GRTRQuad Flat No-Lead
STA8089GRTRIntegrated Circuit

STA8089GR - GPS/Glonass/Beidou/QZSS receiver

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STA8089GRQuad Flat No-Lead
STA8089GRIntegrated Circuit

STA8089GR - GPS/Glonass/Beidou/QZSS receiver

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STA8090F4GTRBGA
STA8090F4GTRIntegrated Circuit

The STA8090F4GTR is a fully integrated multi-constellation GNSS receiver supporting GPS, Galileo, GLONASS, BeiDou-2, and QZSS with an embedded RF front-end and in-package Flash memory. Housed in a compact TFBGA99 package (5 x 6 x 1.2 mm), it operates across a -40°C to +85°C industrial temperature range for demanding navigation and positioning applications.

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STA8090WGBGA
STA8090WGIntegrated Circuit

WLCSP-77

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STSPIN32F0602QTROther
STSPIN32F0602QTRIntegrated Circuit

Advanced 600 V three-phase BLDC controller with embedded STM32 MCU

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STA8090F4GBGA
STA8090F4GIntegrated Circuit

STMicroelectronics STA8090F4G is a fully integrated multi-constellation GNSS receiver supporting GPS, Galileo, GLONASS, BeiDou-2, and QZSS, with an embedded RF front end and 4 MB in-package Flash in a compact BGA package. It delivers position accuracy down to 1.5 m CEP and sensitivity as low as -165 dBm tracking. Available from stock with worldwide shipping.

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RF3L05400CB4IC Package
RF3L05400CB4Integrated Circuit

400 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

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FDA803U-KBXOther
FDA803U-KBXIntegrated Circuit

1 x 45 W class D digital input automotive power amplifier with diagnostics, wide voltage operation range for car audio and telematic

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ST25R3915-AQWTQuad Flat No-Lead
ST25R3915-AQWTIntegrated Circuit

ST25R3915-AQWT is an STMicroelectronics AEC-Q100 automotive-grade high-frequency NFC/RFID reader IC delivering up to 1 W RF output power on the 13.56 MHz band with a supply voltage range of 2.4 V to 5.5 V. It supports ISO 15693, ISO 14443A/B, and NFC-V protocols in a compact 32-lead QFN package. Designed for automotive keyless entry and EV charging authentication applications.

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TDA7705TRQuad Flat Packages
TDA7705TRIntegrated Circuit

Highly integrated tuner for AM/FM car radio

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ST25TV02KCOther
ST25TV02KCIntegrated Circuit

The ST25TV02KC is an NFC Type 5 / ISO 15693 RFID tag IC featuring 2.5 Kbits of EEPROM memory with configurable write protection and product identification. It operates from a contactless RF interface at 13.56 MHz, supports energy harvesting, and is compatible with NFC-enabled smartphones and readers for supply chain, asset tracking, and smart packaging applications.

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