STP20N60M2-EP STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP20N60M2-EP is an N-channel 600 V MDmesh M2 Power MOSFET with 13 A drain current, 0.230 Ω typical on-resistance, and avalanche rating of 138 mJ in a TO-220 package. Designed for high-efficiency power conversion. Available in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP20N60M2-EP Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V breakdown voltage with 0.230 Ω typical RDS(on) and 13 A continuous drain current enabling high-efficiency switching in offline power supplies and PFC stages
- Avalanche rated at 138 mJ (Eas) for robust unclamped inductive switching (UIS) protection in motor drives and inverter designs with inductive loads
- MDmesh M2 technology delivers ultra-low gate charge and 1.2 pF feedback capacitance (Crss), enabling fast switching above 100 kHz with minimal EMI
Applications
The STP20N60M2-EP is primarily used in switch-mode power supplies (SMPS), PFC boost converters, and LLC resonant converters operating from 85 V to 265 V AC mains, where the 600 V rating provides adequate voltage headroom. Motor drives and inverters for 3-phase AC motors rated up to 1.5 kW also benefit from the device's avalanche energy tolerance, which protects against voltage spikes during fast turn-off of inductive motor windings. The TO-220 package simplifies heatsink attachment, making it a popular choice for industrial power stages operating at switching frequencies from 50 kHz to 150 kHz.
Specifications
| YTEOL | 6 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 138mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 13A |
| Drain-source On Resistance-Max | 0.278Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 1.2pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 110W |
| Pulsed Drain Current-Max (IDM) | 52A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What switching frequency range is the STP20N60M2-EP suited for, given its 1.2 pF Crss and gate charge characteristics?
The STP20N60M2-EP's 1.2 pF feedback capacitance (Crss) and low gate charge, enabled by MDmesh M2 technology, allow efficient switching from 50 kHz up to 150 kHz in hard-switched topologies and up to 300 kHz in soft-switched resonant converters. At 100 kHz with a 400 V bus, switching losses remain below 5 W, which is significantly lower than conventional planar MOSFETs with the same 600 V, 13 A ratings.
How does the 138 mJ avalanche energy rating of the STP20N60M2-EP protect motor drive designs?
The STP20N60M2-EP is rated for 138 mJ of unclamped inductive switching (UIS) avalanche energy, which means it can safely absorb the energy stored in a 100 µH inductive load at 13 A without destruction. In 3-phase motor inverters operating at 400 V DC bus, this avalanche capability provides a critical safety margin during fast gate turn-off, preventing catastrophic failure when voltage spikes exceed 600 V for durations under 10 µs.
How does the STP20N60M2-EP's RDS(on) of 0.230 Ω compare to competing 600 V MOSFETs, and what efficiency gain does it offer?
The STP20N60M2-EP achieves a typical RDS(on) of 0.230 Ω (0.278 Ω maximum) at VGS = 10 V, which is approximately 15% lower than conventional 600 V planar MOSFETs in the same TO-220 package. At 10 A continuous drain current, this translates to conduction losses of 23 W versus 27 W for a 0.27 Ω competitor, improving converter efficiency by up to 1.5% at full load in a 500 W power supply stage.
Which thermal management approach is recommended when using the STP20N60M2-EP in a 500 W SMPS application?
For a 500 W SMPS operating at 100 kHz, the STP20N60M2-EP in a TO-220 package requires a heatsink with thermal resistance below 5°C/W to keep junction temperature under 125°C at 50°C ambient, given total switching and conduction losses of approximately 8 W to 12 W. A 50 x 50 mm aluminum extrusion heatsink with thermal paste providing 0.5°C/W interface resistance is typically sufficient. Forced-air cooling at 2 m/s airflow can reduce heatsink requirements to a 30 x 30 mm profile.
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STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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