STF13N60M2(045Y) STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STF13N60M2(045Y) is an N-channel 600 V MDmesh M2 Power MOSFET rated at 11 A continuous drain current with 0.35 Ohm typical RDS(on). Housed in a TO-220FP narrow leads package, it delivers low switching losses and high efficiency for power conversion designs.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STF13N60M2(045Y) Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STF13N60M2(045Y)?
- 600 V breakdown voltage with 11 A continuous drain current for robust high-voltage switching
- Low RDS(on) of 0.35 Ohm typ. minimizes conduction losses and improves power efficiency
- MDmesh M2 technology reduces gate charge and switching losses compared to standard MOSFETs
- TO-220FP narrow leads package enables compact PCB layout with easy heatsink mounting
What is STF13N60M2(045Y) used for?
STF13N60M2(045Y) is well-suited for switch-mode power supplies, PFC boost converters, and flyback topologies operating at up to 600 V. Its low RDS(on) and fast switching characteristics make it ideal for energy-efficient industrial power supplies and AC-DC adapters. The device also fits motor drive circuits and lighting ballast applications where high-voltage, low-loss operation is critical.
What are the specifications of STF13N60M2(045Y)?
| YTEOL | 0 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STF13N60M2(045Y) datasheet?
STF13N60M2(045Y) Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STF13N60M2(045Y)?
Compatible alternatives and drop-in replacements for STF13N60M2(045Y):
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Frequently Asked Questions
Which power-conversion designs fit the STF13N60M2(045Y) voltage and current ratings?
The device supports switching designs requiring up to 600 V blocking capability and 11 A continuous drain current, subject to thermal design.
How does the on-resistance affect conduction losses?
Its typical 0.35 Ohm RDS(on) helps limit conduction loss, but actual dissipation depends on junction temperature, gate drive, and operating current.
What package constraint should purchasing and assembly teams verify?
This MOSFET uses a TO-220FP narrow-lead package, and the 11 A design target still requires appropriate heatsinking, creepage, footprint, and lead forming.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
In Stock · 24h Response · Worldwide Shipping
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