STF13N60M2(045Y) STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STF13N60M2(045Y) is an N-channel 600 V MDmesh M2 Power MOSFET rated at 11 A continuous drain current with 0.35 Ohm typical RDS(on). Housed in a TO-220FP narrow leads package, it delivers low switching losses and high efficiency for power conversion designs.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STF13N60M2(045Y) Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V breakdown voltage with 11 A continuous drain current for robust high-voltage switching
- Low RDS(on) of 0.35 Ohm typ. minimizes conduction losses and improves power efficiency
- MDmesh M2 technology reduces gate charge and switching losses compared to standard MOSFETs
- TO-220FP narrow leads package enables compact PCB layout with easy heatsink mounting
Applications
STF13N60M2(045Y) is well-suited for switch-mode power supplies, PFC boost converters, and flyback topologies operating at up to 600 V. Its low RDS(on) and fast switching characteristics make it ideal for energy-efficient industrial power supplies and AC-DC adapters. The device also fits motor drive circuits and lighting ballast applications where high-voltage, low-loss operation is critical.
Specifications
| YTEOL | 0 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STF13N60M2(045Y):
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Frequently Asked Questions
What is the maximum drain-to-source voltage the STF13N60M2(045Y) can handle?
The STF13N60M2(045Y) has a 600 V drain-to-source breakdown voltage (VDSS), making it suitable for offline power supplies operating from 85 V to 265 V AC mains. This rating provides sufficient derating margin in typical PFC and flyback converter designs.
How does the MDmesh M2 technology in STF13N60M2(045Y) improve switching efficiency compared to older STMicroelectronics MOSFETs?
MDmesh M2 technology delivers a significantly lower gate charge (Qg) and reduced output capacitance (Coss) versus previous-generation MDmesh devices, enabling faster switching transitions at frequencies above 50 kHz. The 0.35 Ohm typical RDS(on) also lowers conduction losses, improving overall converter efficiency by several percentage points in 100 W–300 W power supply designs.
Which power supply topologies are best served by the STF13N60M2(045Y)?
The 11 A continuous drain current and 600 V rating make the STF13N60M2(045Y) a strong fit for PFC boost stages, flyback converters, and LLC resonant topologies in the 50 W–250 W range. Its TO-220FP narrow leads package simplifies heatsinking on PCBs where 5 mm lead pitch is preferred.
Is STF13N60M2(045Y) RoHS-compliant and what is its operating temperature range?
The STF13N60M2(045Y) from STMicroelectronics is manufactured in compliance with RoHS directives and is lead-free. It is rated for junction temperatures from -55 °C to +150 °C, ensuring reliable operation across automotive-adjacent and industrial environment conditions.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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