STU5N95K5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STU5N95K5 is an N-channel MOSFET rated at 950 V and 3.5 A with 70 W power dissipation, featuring avalanche energy rating of 70 mJ and 2.5 Ω on-resistance. Housed in a TO-251 (IPAK) through-hole package, it operates from -55°C to 150°C. Available in stock worldwide for immediate high-voltage power design procurement.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STU5N95K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 950 V drain-source breakdown voltage with avalanche energy rating of 70 mJ for robust high-voltage circuit protection
- Ultra-low on-resistance of 2.5 Ω with 3.5 A continuous drain current for efficient power switching
- TO-251 (IPAK) through-hole package with -55°C to 150°C operating range enabling high-reliability industrial designs
Applications
The STU5N95K5 is ideal for high-voltage switch-mode power supplies, offline flyback converters, and PFC circuits requiring robust 950 V switching capability. Its avalanche energy rated construction and 70 W thermal dissipation make it suitable for industrial motor drive circuits and LED driver topologies. This MOSFET is widely used in white goods, industrial equipment, and energy metering systems operating on mains voltage rails.
Specifications
| Date Of Intro | 2017-01-12 |
| YTEOL | 0 |
| Additional Feature | AVALANCHE ENERGY RATED |
| Avalanche Energy Rating (Eas) | 70mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 950V |
| Drain Current-Max (ID) | 3.5A |
| Drain-source On Resistance-Max | 2.5Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 1pF |
| JEDEC-95 Code | TO-251 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 14A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 57ns |
| Turn-on Time-Max (ton) | 28ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of STU5N95K5 for high-voltage power supply designs?
The STU5N95K5 supports a drain-source breakdown voltage of 950 V and a maximum drain current of 3.5 A at case temperature. Combined with a 2.5 Ω maximum on-resistance and 70 W power dissipation rating, it is well suited for offline power supplies and flyback converter primary switches operating from mains voltage.
How does the avalanche energy rating of STU5N95K5 benefit unclamped inductive switching applications?
The STU5N95K5 has an avalanche energy rating of 70 mJ, meaning it can safely absorb energy from unclamped inductive loads during turn-off events without damage. This robustness is critical in motor drive, relay driver, and flyback converter designs where voltage spikes above 950 V can occur on the drain node.
Which package does STU5N95K5 use and what is its junction temperature range for industrial designs?
The STU5N95K5 is packaged in a TO-251 (IPAK) through-hole format, which provides a compact footprint with a case-connected drain tab for heat sinking. Its junction temperature range spans -55°C to 150°C, making it suitable for industrial and outdoor power equipment operating across wide ambient temperature extremes.
When should a designer consider STU5N95K5 over a lower-voltage N-channel MOSFET in a PFC boost stage?
A designer should select the STU5N95K5 when the PFC boost output voltage exceeds 400 V and derating to 50% of breakdown voltage is required, since the 950 V rating provides sufficient headroom above 400 V DC bus plus transient spikes. The 3.5 A drain current and 2.5 Ω on-resistance are adequate for low-power PFC stages up to 70 W.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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