STP70NS04ZC STMicroelectronics Integrated Circuit (Transistor Outline, Vertical) In Stock
The STMicroelectronics STP70NS04ZC is an N-channel power MOSFET rated at 40 V and 80 A continuous drain current with a 5 mΩ typical on-resistance in a TO-220AB package. It features avalanche energy rating of 720 mJ, an integrated clamp diode, and is optimized for low-loss DC motor drive and synchronous rectification. Available worldwide with fast shipping for high-current switching designs.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP70NS04ZC Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 80 A continuous drain current with 5 mΩ typical RDS(on) minimizes conduction loss in high-current motor-drive and DC/DC converter stages
- 720 mJ avalanche energy rating (Eas) provides robust protection against inductive flyback spikes in unclamped motor and solenoid switching applications
- Integrated clamp diode and resistor simplify gate-drive circuit design by eliminating the need for external Zener protection components
- TO-220AB package with exposed metal tab enables efficient heatsinking to keep junction temperature below 175°C at full 80 A load
Applications
The STP70NS04ZC is well suited for brushed DC motor control circuits in power tools, e-bikes, and industrial actuators where low RDS(on) at 80 A reduces heat dissipation and improves efficiency at switching frequencies up to 20 kHz. It is also used in synchronous rectification stages of high-current DC/DC buck converters operating from 12 V to 24 V input, replacing Schottky diodes to cut forward-voltage losses from 0.4 V to under 5 mV at full load. Battery management systems for lithium-ion packs leverage the avalanche-rated design to safely switch 80 A charge or discharge currents without catastrophic MOSFET failure during transient over-voltage events.
Specifications
| YTEOL | 0 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 720mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 33V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.011Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 230pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 180W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the RDS(on) and continuous drain current specifications of the STP70NS04ZC for a 12 V motor controller design?
The STP70NS04ZC is specified at 5 mΩ typical RDS(on) (11 mΩ maximum) at a gate-source voltage of 10 V and a continuous drain current of 80 A at 25°C case temperature. At 80 A, the conduction loss is just 35 mW typical (5 mΩ x 80² A = 32 W total; actual thermal derating applies), making it one of the lowest-loss N-channel MOSFETs in the TO-220 package for 12 V motor drive stages. The breakdown voltage minimum of 33 V provides adequate margin above 12 V supply with inductive transients in motor-control applications.
How does the 720 mJ avalanche energy rating of STP70NS04ZC protect a motor-drive circuit from inductive spikes?
When the STP70NS04ZC turns off a motor winding carrying 80 A, the winding inductance generates a flyback voltage spike that forward-biases the MOSFET body diode and enters avalanche breakdown. The 720 mJ single-pulse avalanche energy (Eas) specification guarantees the device absorbs up to 720 mJ without damage, equivalent to switching off a 225 µH motor winding carrying 80 A. Without this avalanche rating, designers must add a 40 V Zener snubber that dissipates the same 720 mJ, adding 2 components and a larger heatsink to the design.
For a synchronous rectification design at 40 V and 60 A, how does STP70NS04ZC reduce losses compared to a Schottky diode?
A typical Schottky rectifier at 60 A has a forward voltage of 0.35 V to 0.45 V, generating 21 W to 27 W of conduction loss. The STP70NS04ZC in synchronous rectification at 60 A with 10 V gate drive exhibits 5 mΩ x 60² = 18 W conduction loss, which dereates further at elevated temperature; at the crossover point near 100°C junction temperature, RDS(on) increases to roughly 8 mΩ, still producing less loss than a Schottky. For a 300 W converter this reduces diode loss by 8 W to 12 W, improving efficiency by 2 to 4 percentage points.
What heatsink is typically needed to run STP70NS04ZC at 80 A continuous in a 25°C ambient environment?
The STP70NS04ZC has a maximum junction temperature of 175°C and a thermal resistance junction-to-case of 1.7°C/W in the TO-220AB package. At 80 A with 11 mΩ maximum RDS(on), worst-case conduction power is 70.4 W. Allowing 100°C junction margin (175°C − 75°C junction rise = 100°C above 25°C ambient), total thermal resistance budget is 100°C / 70.4 W = 1.42°C/W. Subtracting 1.7°C/W junction-to-case leaves negative headroom, so forced-air cooling with a heatsink below 0.5°C/W and a thermal interface pad under 0.2°C/W is required for reliable 80 A continuous operation.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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