STP70NS04ZC STMicroelectronics Integrated Circuit (Transistor Outline, Vertical) In Stock
The STMicroelectronics STP70NS04ZC is an N-channel power MOSFET rated at 40 V and 80 A continuous drain current with a 5 mΩ typical on-resistance in a TO-220AB package. It features avalanche energy rating of 720 mJ, an integrated clamp diode, and is optimized for low-loss DC motor drive and synchronous rectification. Available worldwide with fast shipping for high-current switching designs.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP70NS04ZC Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP70NS04ZC?
- 80 A continuous drain current with 5 mΩ typical RDS(on) minimizes conduction loss in high-current motor-drive and DC/DC converter stages
- 720 mJ avalanche energy rating (Eas) provides robust protection against inductive flyback spikes in unclamped motor and solenoid switching applications
- Integrated clamp diode and resistor simplify gate-drive circuit design by eliminating the need for external Zener protection components
- TO-220AB package with exposed metal tab enables efficient heatsinking to keep junction temperature below 175°C at full 80 A load
What is STP70NS04ZC used for?
The STP70NS04ZC is well suited for brushed DC motor control circuits in power tools, e-bikes, and industrial actuators where low RDS(on) at 80 A reduces heat dissipation and improves efficiency at switching frequencies up to 20 kHz. It is also used in synchronous rectification stages of high-current DC/DC buck converters operating from 12 V to 24 V input, replacing Schottky diodes to cut forward-voltage losses from 0.4 V to under 5 mV at full load. Battery management systems for lithium-ion packs leverage the avalanche-rated design to safely switch 80 A charge or discharge currents without catastrophic MOSFET failure during transient over-voltage events.
What are the specifications of STP70NS04ZC?
| YTEOL | 0 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 720mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 33V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.011Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 230pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 180W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP70NS04ZC datasheet?
STP70NS04ZC Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP70NS04ZC?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the RDS(on) and continuous drain current specifications of the STP70NS04ZC for a 12 V motor controller design?
The STP70NS04ZC is specified at 5 mΩ typical RDS(on) (11 mΩ maximum) at a gate-source voltage of 10 V and a continuous drain current of 80 A at 25°C case temperature. At 80 A, the conduction loss is just 35 mW typical (5 mΩ x 80² A = 32 W total; actual thermal derating applies), making it one of the lowest-loss N-channel MOSFETs in the TO-220 package for 12 V motor drive stages. The breakdown voltage minimum of 33 V provides adequate margin above 12 V supply with inductive transients in motor-control applications.
How does the 720 mJ avalanche energy rating of STP70NS04ZC protect a motor-drive circuit from inductive spikes?
When the STP70NS04ZC turns off a motor winding carrying 80 A, the winding inductance generates a flyback voltage spike that forward-biases the MOSFET body diode and enters avalanche breakdown. The 720 mJ single-pulse avalanche energy (Eas) specification guarantees the device absorbs up to 720 mJ without damage, equivalent to switching off a 225 µH motor winding carrying 80 A. Without this avalanche rating, designers must add a 40 V Zener snubber that dissipates the same 720 mJ, adding 2 components and a larger heatsink to the design.
For a synchronous rectification design at 40 V and 60 A, how does STP70NS04ZC reduce losses compared to a Schottky diode?
A typical Schottky rectifier at 60 A has a forward voltage of 0.35 V to 0.45 V, generating 21 W to 27 W of conduction loss. The STP70NS04ZC in synchronous rectification at 60 A with 10 V gate drive exhibits 5 mΩ x 60² = 18 W conduction loss, which dereates further at elevated temperature; at the crossover point near 100°C junction temperature, RDS(on) increases to roughly 8 mΩ, still producing less loss than a Schottky. For a 300 W converter this reduces diode loss by 8 W to 12 W, improving efficiency by 2 to 4 percentage points.
What heatsink is typically needed to run STP70NS04ZC at 80 A continuous in a 25°C ambient environment?
The STP70NS04ZC has a maximum junction temperature of 175°C and a thermal resistance junction-to-case of 1.7°C/W in the TO-220AB package. At 80 A with 11 mΩ maximum RDS(on), worst-case conduction power is 70.4 W. Allowing 100°C junction margin (175°C − 75°C junction rise = 100°C above 25°C ambient), total thermal resistance budget is 100°C / 70.4 W = 1.42°C/W. Subtracting 1.7°C/W junction-to-case leaves negative headroom, so forced-air cooling with a heatsink below 0.5°C/W and a thermal interface pad under 0.2°C/W is required for reliable 80 A continuous operation.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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