STB80NF55-06T STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STB80NF55-06T is an N-channel STripFET II power MOSFET rated at 55 V, 80 A with an ultra-low 5 mΩ (typ.) RDS(on) in a D2PAK package. It features a 1300 mJ avalanche energy rating and built-in fast body diode for robust switching performance. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STB80NF55-06T Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low 5 mΩ typical RDS(on) at 80 A drain current minimizes conduction losses in high-current DC-DC converters and motor drives
- 1300 mJ avalanche energy rating (Eas) provides exceptional robustness against inductive switching transients in unclamped loads
- D2PAK (TO-263) package with drain tab enables direct heatsink attachment, supporting thermal dissipation in space-efficient power stage designs
Applications
The STB80NF55-06T is suited for high-current DC-DC buck converters, synchronous rectification stages, and battery protection circuits operating from 12 V to 48 V bus rails. Its 80 A continuous drain current and 5 mΩ RDS(on) make it a primary switch choice in automotive power distribution modules, industrial motor controllers, and UPS systems. The D2PAK package with robust avalanche rating supports high-reliability power designs where inductive load switching and thermal stress are significant concerns.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 1300mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.0065Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 350pF |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STB80NF55-06T and how do they suit high-current switching designs?
The STB80NF55-06T is rated for 55 V drain-source voltage and 80 A continuous drain current, with a maximum RDS(on) of 6.5 mΩ at 10 V gate drive. These ratings make it directly suitable for 12 V and 48 V power stages in DC-DC converters, battery management systems, and brushed DC motor drives where both low conduction loss and high current handling are required.
How does the 1300 mJ avalanche energy rating of the STB80NF55-06T benefit motor control applications?
The STB80NF55-06T's 1300 mJ single-pulse avalanche energy rating (Eas) protects the device when inductive flyback voltage spikes exceed the 55 V VDS rating during motor switching. This high Eas means the MOSFET can absorb significant energy from unclamped inductive loads without failure, reducing the need for external transient voltage suppressors in motor controller and solenoid driver circuits.
What thermal advantages does the D2PAK package offer for the STB80NF55-06T in a PCB power stage?
The D2PAK (TO-263) package used by the STB80NF55-06T has a large exposed drain tab soldered directly to the PCB copper plane, enabling a thermal resistance of approximately 1.7°C/W junction-to-case without an additional heatsink. This allows the 80 A MOSFET to dissipate over 100 W under pulsed conditions when mounted on a 2-oz copper plane, making it practical for compact high-power board-mounted power stages.
When would a designer choose the STB80NF55-06T over a 100 V MOSFET for a 24 V automotive power circuit?
At 24 V nominal bus voltage with peak transients below 45 V, the STB80NF55-06T's 55 V rating provides adequate margin while its 5 mΩ RDS(on) is typically 30–50% lower than comparable 100 V MOSFETs. This lower on-resistance reduces conduction losses and junction temperature, making the 55 V device the more efficient choice in automotive DC load switches and 24 V motor drivers where voltage headroom is well characterized.
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