STF5N80K5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STF5N80K5 is an N-channel 800 V MDmesh K5 Power MOSFET rated 4 A with 1.50 Ω typical RDS(on) in a TO-220FP isolated package. Designed for high-voltage switching with avalanche energy rating of 165 mJ.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF5N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.7005(MOQ 10)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STF5N80K5?
- 800 V drain-source breakdown voltage with 1.75 Ω maximum RDS(on) for high-voltage switching efficiency
- MDmesh K5 technology achieves low switching losses and 165 mJ avalanche energy rating for rugged operation
- TO-220FP isolated package with case-isolated tab simplifies thermal management without extra insulation hardware
What is STF5N80K5 used for?
The STF5N80K5 is designed for high-voltage power conversion applications including flyback converters, resonant topologies, and PFC stages operating from 400 V DC bus rails. Its 800 V rating and MDmesh K5 technology make it suitable for LED lighting drivers, AC-DC adapters, and industrial SMPS designs requiring low switching losses at 4 A continuous drain current.
What are the specifications of STF5N80K5?
| Manufacturer Package Code | TO-220FP |
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 165mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 1.75Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.3pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20W |
| Pulsed Drain Current-Max (IDM) | 16A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STF5N80K5 datasheet?
STF5N80K5 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STF5N80K5?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STF5N80K5 MOSFET?
The STF5N80K5 is rated for 800 V drain-source breakdown voltage and 4 A maximum continuous drain current (ID), with a typical RDS(on) of 1.50 Ω and a maximum of 1.75 Ω at 25°C. These parameters suit it for high-voltage off-line power conversion stages.
Which switching power supply topologies are best matched to the STF5N80K5?
The STF5N80K5 is optimized for flyback, LLC resonant, and active clamp forward converters operating from 230 V AC mains where the DC bus reaches 400 V. Its MDmesh K5 superjunction structure reduces capacitive charge (Qg) and switching losses at frequencies up to 100 kHz, enabling compact 4 A power stage designs.
What does the MDmesh K5 process offer compared to standard planar MOSFETs in high-voltage applications?
MDmesh K5 is STMicroelectronics' fifth-generation superjunction process. Compared to planar MOSFETs of similar 800 V rating, it delivers lower RDS(on) per unit area and reduced gate charge, translating to better efficiency in continuous conduction mode PFC and resonant converter stages above 50 kHz.
What does the TO-220FP isolated package mean for thermal design of the STF5N80K5?
The TO-220FP (full-pack) package has an electrically isolated mounting tab, so the drain is not shorted to the heatsink. This eliminates the need for an insulating pad between the MOSFET and chassis-mounted heatsinks, simplifying assembly in isolated topologies where the drain operates at 800 V switching voltage.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.1400 | $11.40 |
| 100+ | $1.0300 | $103.00 |
| 250+ | $0.9900 | $247.50 |
| 500+ | $0.8600 | $430.00 |
| 2000+ | $0.8149 | $1629.78 |
| 4000+ | $0.7005 | $2801.88 |
In Stock · 24h Response · Worldwide Shipping
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