Transistor BJT NPN

ROHM QS5W2TR is a dual NPN bipolar junction transistor in a compact TSMT5 5-pin package, rated at 50 V collector-emitter voltage and 3 A collector current with a minimum hFE of 180. Ideal for low-side switching and driver applications. Available in stock with worldwide shipping.

Diodes Inc. FCX491ATA is a single NPN bipolar junction transistor rated at 1 A collector current and 40 V collector-emitter voltage in a compact 4-pin SOT-89 package. With a minimum DC current gain (hFE) of 35, it delivers efficient switching and amplification in power management circuits. Available from authorized distributors with worldwide shipping.

Infineon BFR 181W H6327 is an NPN RF bipolar transistor rated at 20 mA collector current and 12 V collector-emitter voltage in a compact 3-pin SOT-323 package optimized for low-noise, high-frequency amplifier applications. High transition frequency enables gain stages in VHF and UHF bands. Available worldwide from authorized distributors with competitive pricing.

Diodes Inc. FMMTA42TA is a Transistor BJT NPN for switching, amplification, level-shifting, and driver circuits. It offers 3 pins, 3 PIN in SOT23 (3-Pin). From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

BC548C A1 from Taiwan Semiconductor is a transistor for switching, amplification, and driver stages. Key specs include 3 pins, standard transistor package, and Bipolar Transistors - BJT NPN Transistor. From quote pricing, in-stock sourcing support.

Collector Dissipation : PC = 625mW Amplifier Transistor; Collector-Emitter Voltage : VCEO= KSP43: 200V; Collector-Emitter Voltage : VCEO= KSP42: 300V

2N5153ESY1 is a STMicroelectronics transistor bjt npn for switching. Key specs include 3 pins, Transistor Outline, Vertical, 80 V. From RFQ-based sourcing, in-stock options can support worldwide shipping.

The 2N5154RESYHRT is a radiation-hardened NPN bipolar transistor rated to 80 V collector-emitter voltage and 5 A collector current in a TO-257 package. It offers a minimum DC current gain (hFE) of 40 and maximum collector-base capacitance of 250 pF for high-reliability space applications. Designed for harsh radiation environments where device longevity and electrical integrity are paramount.

STMicroelectronics 2N5154ESYHRT is a radiation-hardened NPN bipolar transistor rated at 80 V collector-emitter voltage and 5 A collector current, designed for high-reliability space and aerospace switching and amplification applications.

2N5154ESY1 is a radiation-hardened NPN bipolar transistor rated for 80 V collector-emitter voltage and 5 A collector current in a hermetic TO-257 package. Designed for high-reliability space and military applications, it delivers stable DC current gain of 40 minimum under total ionizing dose environments.

The 2N5154RESYHRG is a radiation-hardened NPN bipolar transistor from STMicroelectronics, rated at 80 V collector-emitter voltage and 5 A collector current. Designed for high-reliability space and military applications, it features a single-transistor configuration in a TO-257 hermetic package with DC current gain (hFE) of 40 minimum.

High voltage fast-switching NPN power transistor

Use the download button to access the 2N3501 schematic symbol and PCB footprint.

TO-39, 3 PIN

Bipolar Transistors - BJT NPN Transistor

Bipolar (BJT) Transistor NPN 30 V 100 mA 300 mW Through Hole TO-18 (TO-206AA)

Bipolar Transistors - BJT 15V 200mA 680mW NPN Small-Signal BJT THT

PNP TRANSISTOR

Bipolar Transistors - BJT Power BJT

Bipolar (BJT) Transistor NPN 80 V 1 A - 800 mW Through Hole TO-39 (TO-205AD)

Trans GP BJT NPN 50V 0.8A 500mW 4-Pin UA Waffle

Bipolar (BJT) Transistor NPN 50 V 800 mA - 800 mW Through Hole TO-39

Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Bag

Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle

NPN-SWITCHING SILICON TRANSISTOR IE=10mAdc, V(BR)CEO=50Vdc, -55to+200°C.

The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively.

Hi-Rel NPN bipolar transistor 60 V, 50 mA

High voltage NPN power transistor for standard definition CRT display

High voltage NPN Power transistor for standard definition CRT display

STMicroelectronics BUV28 is a single NPN bipolar junction transistor rated at 10 A collector current and 200 V collector-emitter voltage in a TO-220AB through-hole package. Designed for high-power switching and linear applications with plastic epoxy body construction. Available from stock worldwide with competitive pricing.

HIGH VOLTAGE NPN SILICON TRANSISTOR

Bipolar Transistors - BJT NPN Power Switching

PLASTIC PACKAGE-3

ST1803DHI is an STMicroelectronics NPN bipolar power transistor with a built-in diode and resistor, rated for a 600V maximum collector-emitter voltage and 10A maximum collector current. It is housed in a 3-pin ISOWATT218 isolated package, suitable for high-voltage switching and driver applications.

The SSM2210PZ is a dual low-noise NPN bipolar transistor by Analog Devices in an 8-pin PDIP package. Key specs: 20 mA collector current, 40 V collector-emitter voltage, minimum hFE of 300 with built-in diode. Available in stock with worldwide shipping.

TO-220, 3 PIN

STMicroelectronics BD441 NPN Bipolar Transistor, 4 A, 80 V, 3-Pin SOT-32

High voltage fast-switching NPN power transistor

High voltage capability ■ Very high switching speed ■ Tight hfe control ■ Large R.B.S.O.A. ■ Fully insulated Package U.L. compliant for easy mounting

TRANS NPN 400V 15A TO-3

ROHS COMPLIANT, DPAK-3

High voltage fast-switching NPN power transistor

Bipolar (BJT) Transistor NPN 700 V 12 A - 58 W Through Hole ISOWATT-218FX

STMICROELECTRONICS - STN2580 - Bipolar (BJT) Single Transistor, NPN, 400 V, 1.6 W, 1 A, 60 hFE

Low voltage NPN power transistor

ROHS COMPLIANT PACKAGE-4

High voltage fast-switching NPN power transistor

High voltage fast-switching NPN power transistor

TO-220, 3 PIN

TO-220, 3 PIN