2N5154ESY1 STMicroelectronics Transistor BJT NPN (Transistor Outline, Vertical) In Stock
2N5154ESY1 is a radiation-hardened NPN bipolar transistor rated for 80 V collector-emitter voltage and 5 A collector current in a hermetic TO-257 package. Designed for high-reliability space and military applications, it delivers stable DC current gain of 40 minimum under total ionizing dose environments.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- 2N5154ESY1 Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- -65.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of 2N5154ESY1?
- Radiation-hardened NPN BJT for space and military-grade designs
- 80 V collector-emitter breakdown voltage (VCEO)
- 5 A continuous collector current with 250 pF collector-base capacitance
- DC current gain (hFE) of 40 minimum for reliable switching and amplification
- Hermetic TO-257 package for high-reliability environments
- High-reliability qualification for extended mission-critical lifetimes
What is 2N5154ESY1 used for?
2N5154ESY1 is deployed in space satellite power conditioning circuits, launch vehicle control electronics, and military avionics where radiation tolerance and long-term reliability are mandatory. It is also used in high-reliability industrial systems such as nuclear instrumentation and downhole drilling electronics that must operate in elevated radiation or harsh environments.
What are the specifications of 2N5154ESY1?
| YTEOL | 4 |
| Additional Feature | HIGH RELIABILITY |
| Collector Current-Max (IC) | 5A |
| Collector-Base Capacitance-Max | 250pF |
| Collector-Emitter Voltage-Max | 80V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 40 |
| JEDEC-95 Code | TO-257 |
| JESD-30 Code | R-XSFM-P3 |
| Number of Elements | 1 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 3.3W |
| Power Dissipation-Max (Abs) | 35W |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 1300ns |
| Turn-on Time-Max (ton) | 500ns |
| VCEsat-Max | 1.5V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | France |
Where can I find the 2N5154ESY1 datasheet?
2N5154ESY1 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for 2N5154ESY1?
Compatible alternatives and drop-in replacements for 2N5154ESY1:
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, 3 Pin
Frequently Asked Questions
What are the key voltage and current ratings of the 2N5154ESY1 for power switching designs?
The 2N5154ESY1 is rated for 80 V collector-emitter voltage and 5 A continuous collector current, making it suitable for medium-power switching stages in space and military power supplies where radiation hardness is also required.
How does the hermetic TO-257 package benefit satellite and defense circuit assemblies?
The TO-257 hermetic metal package provides a moisture and contamination barrier essential for space and avionics assemblies, where standard plastic packages fail under vacuum outgassing or radiation exposure. It houses a single NPN transistor element in a 3-pin configuration with high thermal conductivity.
What minimum DC current gain does the 2N5154ESY1 guarantee for bias-sensitive amplifier stages?
The device guarantees a minimum hFE of 40 under rated collector current conditions, ensuring stable base drive calculations for linear amplifier and low-frequency switching circuits even after significant total ionizing dose accumulation in 80 V applications.
When should a designer choose 2N5154ESY1 over a commercial-grade NPN transistor at the same voltage rating?
The 2N5154ESY1 is chosen when the application must survive total ionizing dose radiation levels typical of low-earth orbit or military environments, or when the procurement specification requires a high-reliability grade part with traceability and hermetic packaging for 80 V, 5 A class switches.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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