BFR 181W H6327 Infineon Transistor BJT NPN (SOT23 (3-Pin)) In Stock
Infineon BFR 181W H6327 is an NPN RF bipolar transistor rated at 20 mA collector current and 12 V collector-emitter voltage in a compact 3-pin SOT-323 package optimized for low-noise, high-frequency amplifier applications. High transition frequency enables gain stages in VHF and UHF bands. Available worldwide from authorized distributors with competitive pricing.
- Manufacturer
- Infineon
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- BFR 181W H6327 Datasheet PDF
- Category
- Transistor BJT NPN
- Price
- From $0.1240(MOQ 3000)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BFR 181W H6327?
- 20 mA collector current and 12 V VCEO rating in a 3-pin SOT-323 (SC-70) package occupying less than 1.5 mm x 2.0 mm of PCB area for space-critical RF front-end designs
- NPN RF bipolar transistor architecture optimized for low-noise amplification in VHF and UHF frequency bands from 100 MHz to beyond 2 GHz, targeting receiver front-end and oscillator circuits
- Infineon H6327 gain binning selection ensuring consistent hFE grouping for matched-pair amplifier stages and balanced RF circuit topologies requiring reproducible small-signal gain
What is BFR 181W H6327 used for?
The BFR 181W H6327 is designed for low-noise amplifier (LNA) stages, oscillator buffers, and mixer circuits in wireless communication modules, FM/VHF receivers, and portable RF instruments where compact SOT-323 footprint and reliable 20 mA operation are essential. Its high transition frequency and NPN topology make it a versatile gain element in UHF band television tuners, two-way radio transceivers, and satellite receiver front ends operating from 3 V to 12 V supply rails.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Where can I find the BFR 181W H6327 datasheet?
BFR 181W H6327 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for BFR 181W H6327?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical limits of BFR 181W H6327, and how do they define its safe operating area in RF amplifier designs?
BFR 181W H6327 is rated for a maximum collector current (IC) of 20 mA and a collector-emitter voltage (VCEO) of 12 V. These limits define a safe operating area suitable for small-signal RF amplifier stages biased at 5 mA to 10 mA quiescent current on 3.3 V to 9 V supply rails, covering the gain requirements of VHF and UHF front-end amplifiers without risking thermal or voltage breakdown.
How compact is the SOT-323 package of BFR 181W H6327 compared to SOT-23, and what PCB layout benefit does this offer?
The SOT-323 (SC-70) package of BFR 181W H6327 measures approximately 2.0 mm x 1.25 mm with a 0.65 mm pitch, roughly 40% smaller by footprint area than the standard SOT-23 (2.9 mm x 1.6 mm) package. This size reduction allows RF designers to place matching networks, bias resistors, and the transistor within a 5 mm x 5 mm board zone, critical for Bluetooth module, WLAN front-end, and portable instrument PCBs where component density exceeds 50 parts per cm2.
For a 433 MHz ISM band LNA design, what transistor characteristics of BFR 181W H6327 should be optimized in the bias network?
At 433 MHz a designer should set the quiescent collector current of BFR 181W H6327 between 5 mA and 10 mA to achieve the best noise figure, typically below 2 dB for NPN RF bipolars in this class. The base bias resistors should establish VCEQ around 3 V on a 5 V supply, keeping the transistor in the linear region with at least 6 dB of voltage headroom below the 12 V VCEO limit to prevent saturation during signal peaks.
What does the H6327 suffix on BFR 181W H6327 indicate, and why does hFE grouping matter for production RF circuit builds?
The H6327 suffix on BFR 181W H6327 identifies a specific hFE (DC current gain) bin selected by Infineon to ensure parts within this code share a tightly matched gain range, typically spanning a 2:1 ratio such as 100 to 200 hFE at 10 mA collector current. In production RF builds, using a defined gain bin reduces bias point variation between units to less than 1 dB of gain spread, avoiding costly individual trimming of output power or noise figure in volume manufacturing.
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Why Buy from FindMyChip
About Infineon
Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3000+ | $0.1290 | $387.00 |
| 6000+ | $0.1250 | $750.00 |
| 9000+ | $0.1240 | $1116.00 |
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