2N5154RESYHRG STMicroelectronics Transistor BJT NPN (Other) In Stock
The 2N5154RESYHRG is a radiation-hardened NPN bipolar transistor from STMicroelectronics, rated at 80 V collector-emitter voltage and 5 A collector current. Designed for high-reliability space and military applications, it features a single-transistor configuration in a TO-257 hermetic package with DC current gain (hFE) of 40 minimum.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- 2N5154RESYHRG Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- -65.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of 2N5154RESYHRG?
- Radiation-hardened NPN BJT for space and military applications
- 80 V collector-emitter voltage (VCEO) maximum rating
- 5 A continuous collector current (IC) maximum
- DC current gain (hFE) minimum 40 for reliable switching
- Single-transistor TO-257 hermetic package for high-reliability use
- 250 pF collector-base capacitance for high-frequency performance
What is 2N5154RESYHRG used for?
The 2N5154RESYHRG is designed for high-reliability switching and amplification in radiation-hardened space electronics, satellite power systems, and military-grade equipment. It is commonly used in DC-DC converters, power switching circuits, and linear regulators within harsh radiation environments. Its hermetic TO-257 package and tested rad-hard characteristics make it suitable for low-Earth orbit and geosynchronous satellite applications.
What are the specifications of 2N5154RESYHRG?
| YTEOL | 4 |
| Additional Feature | HIGH RELIABILITY |
| Collector Current-Max (IC) | 5A |
| Collector-Base Capacitance-Max | 250pF |
| Collector-Emitter Voltage-Max | 80V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 40 |
| JEDEC-95 Code | TO-257 |
| JESD-30 Code | R-XSFM-P3 |
| Number of Elements | 1 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 3.3W |
| Power Dissipation-Max (Abs) | 35W |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 100K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 1300ns |
| Turn-on Time-Max (ton) | 500ns |
| VCEsat-Max | 1.5V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | France |
Where can I find the 2N5154RESYHRG datasheet?
2N5154RESYHRG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for 2N5154RESYHRG?
Compatible alternatives and drop-in replacements for 2N5154RESYHRG:
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, 3 Pin
Frequently Asked Questions
What is the maximum collector-emitter voltage rating of the 2N5154RESYHRG and how does it affect circuit design?
The 2N5154RESYHRG is rated at 80 V collector-emitter voltage (VCEO) maximum, making it suitable for medium-voltage power switching circuits. Designers must ensure supply rails and transients stay below this 80 V limit to prevent breakdown and maintain device reliability in space-grade applications.
How does the 2N5154RESYHRG perform in satellite power switching applications compared to standard commercial NPN transistors?
This radiation-hardened NPN transistor handles 5 A collector current and operates across a wide temperature range typical of space environments (-55°C to +150°C). Unlike commercial-grade BJTs, it is specifically tested and qualified for total ionizing dose (TID) environments, making it essential for satellite power management circuits where standard transistors would degrade.
Which procurement considerations apply when sourcing the 2N5154RESYHRG for a space or mil-grade program?
The 2N5154RESYHRG requires sourcing through authorized high-reliability distributors certified for space and military components. Lead times can extend to 26 weeks or more due to radiation testing and lot qualification requirements. Minimum order quantities (MOQ) and screening levels (such as JAN or JANS) should be confirmed with STMicroelectronics to meet specific mission lifetime requirements.
What is the TO-257 package configuration and why is it preferred for radiation-hardened transistors?
The TO-257 is a hermetically sealed 3-pin package (R-XSFM-P3 JEDEC code) housing a single NPN transistor element. Hermetic sealing prevents moisture ingress and outgassing in vacuum environments, while the robust package construction helps maintain electrical integrity under mechanical vibration and thermal cycling experienced by satellite and aerospace hardware.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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