QS5W2TR ROHM Semiconductor Transistor BJT NPN (Other) In Stock
ROHM QS5W2TR is a dual NPN bipolar junction transistor in a compact TSMT5 5-pin package, rated at 50 V collector-emitter voltage and 3 A collector current with a minimum hFE of 180. Ideal for low-side switching and driver applications. Available in stock with worldwide shipping.
- Manufacturer
- ROHM Semiconductor
- Package
- Other
- Pin Count
- 5
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- QS5W2TR Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual NPN common-emitter configuration with 2 elements in a single TSMT5 package, halving BOM count versus discrete transistors
- 50 V VCEO and 3 A IC ratings with minimum hFE of 180 for high-gain, medium-power switching applications
- RoHS-compliant TSMT5 surface-mount package enabling automated reflow assembly in space-constrained designs
Applications
The QS5W2TR is used in compact motor-drive circuits, LED matrix drivers, and relay switching stages where two independent NPN switches are needed in a single footprint. Its 50 V / 3 A ratings cover typical 24 V industrial load switching with adequate voltage margin, while the high hFE of 180 minimum allows direct drive from low-current microcontroller GPIO outputs without additional buffer stages. The TSMT5 package suits dense SMT boards in consumer electronics, white-goods appliances, and battery-management modules.
Specifications
| Pbfree Code | Yes |
| YTEOL | 3 |
| Collector Current-Max (IC) | 3A |
| Collector-Emitter Voltage-Max | 50V |
| Configuration | COMMON EMITTER, 2 ELEMENTS |
| DC Current Gain-Min (hFE) | 180 |
| JESD-30 Code | R-PDSO-G5 |
| JESD-609 Code | e1 |
| Number of Elements | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 1.25W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 320MHz |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for QS5W2TR:
Frequently Asked Questions
What collector current and voltage ratings does QS5W2TR support for relay-coil drive circuits?
The QS5W2TR is rated for a maximum collector current of 3 A and a collector-emitter voltage of 50 V per element. Most 24 V relay coils draw between 50 mA and 150 mA, placing the transistor well within its safe operating area, while the 50 V VCEO rating provides ample headroom above the coil supply to absorb inductive kick transients even without a flyback diode.
Can the dual NPN elements of QS5W2TR be used to drive two independent load channels simultaneously from a single microcontroller port?
Yes. Each of the 2 NPN elements shares only the package body; bases, collectors, and emitters are fully independent. With a minimum hFE of 180, a 5 V GPIO output driving a 10 kΩ base resistor yields approximately 0.5 mA base current and can switch up to 90 mA of collector current per channel, sufficient for driving small DC motors, solenoids, or LED strings independently from a single MCU port expander.
How does the TSMT5 package compare with a standard SOT-23 dual transistor when routing two switching channels on a compact PCB?
The TSMT5 package houses 2 transistors in approximately the same board area as a single SOT-23-6 dual package, typically measuring 2.8 mm x 2.9 mm. Compared with placing two discrete SOT-23 single transistors, the TSMT5 reduces the total footprint by roughly 40%, eliminates one BOM line item, and improves thermal matching between the two switching channels because both junctions share the same thermal environment within one molded body.
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