Transistor BJT NPN

Minimum Gain - hFE = 63 @ IC = 150 mA; BD135, BD137, BD139 are complementary with BD136, BD138, BD140; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Use the download button to access the TIP141G schematic symbol, PCB footprint, and 3D model.

Monolithic Construction with Built-In Base-Emitter Shunt Resistor; High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V; Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) TIP142, TIP147; Pb-Free Packages are Available

Use the download button to access the BSR14 schematic symbol, PCB footprint, and 3D model.

SOT-23, 3 PIN

DMC264010R, Dual Digital Transistor, NPN 100 MA 50 V 10 kΩ, Ratio Of 1, 6-Pin Mini6 G4 B

1 A Rated Collector Current; 250 V to 400 V (Min) VCEO(sus); Popular TO-220 Plastic Package; This Device is Pb-Free and are RoHS Compliant

Compact TO-220 AB Package; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A =80 Vdc (min) - TIP31B, TIP32B =100 Vdc (min) - TIP31C, TIP32C; Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (min) @ IC = 500 mAdc; Pb-Free Packages are Available

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 mAdc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; TO-220 AB Compact Package; Collector-Emitter Sustaining Voltage--@ 30 mAdc VCEO(sus) = 60 Vdc (Min)-TIP100, TIP105 VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106 VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc VCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 Adc; Pb-Free Packages are Available

TO-3, 2 PIN

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

DC Current Gain Specified to 10 Amperes; High Current Gain - Bandwidth Product - fT = 2.0 MHz (Min) @ IC fT = 500 mAdc; Pb-Free Packages are Available

Collector-Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033; High Current Gain Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available*

For Low Distortion Complementary Designs; High Safe Operating Area (100% Tested) - 5.0 A @ 50 V; High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc

High Safe Operating Area (100% Tested) - 2 A @ 80 V; High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc

DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

Fall time = 0.3 ms (typ) at IC = 1.0 A; VCES(sus) 1000 V; VCEO(sus) 450 V; VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A; Pb-Free Package is Available

Obsolete - 15 A, 80 V PNP Darlington Bipolar Power Transistor

BD135, BD137, BD139 are complementary with BD136, BD138, BD140; Minimum DC Current Gain - hFE = 40 @ IC = 0.15 A; These are Pb-Free Devices

CASE 340D-02, 3 PIN

Last Shipments - PNP Epitaxial Silicon Transistor

TO-92, 3 PIN

Use the download button to access the BC547CG schematic symbol, PCB footprint, and 3D model.

LEAD FREE, CASE 29-11, TO-226, 3 PIN

TO-92, 3 PIN

BC546BRL1G is a 3PIN 0.1A capacitor by ON Semiconductor. Key specs: 3PIN, 0.1A, 4.5pF. From quote-based pricing, in stock with worldwide shipping for production sourcing.

PMMT491A, NPN Bipolar Transistor, 1 A 40 V HFE:200 150 MHz Small Signal, 3-Pin TO-236AB

PMBT4403, NPN Bipolar Transistor, 0.6 A 40 V HFE:20 200 MHz Small Signal, 3-Pin TO-236AB

PMBT2369, NPN Bipolar Transistor, 0.2 A 15 V HFE:20 500 MHz Small Signal, 3-Pin TO-236AB

PMBT4401, NPN Bipolar Transistor, 0.6 A 40 V HFE:20 250 MHz Small Signal, 3-Pin TO-236AB

Use the download button to access the PMBTA42 schematic symbol, PCB footprint, and 3D model.

Nexperia PDTC123ET is a digital NPN transistor in SOT-23 (TO-236AB) with built-in 2.2 kΩ base bias resistors (R1:R2 ratio of 1) rated at 100 mA collector current and 50 V VCEo. Minimum hFE of 30 suits direct MCU GPIO switching without external resistors. Available from authorized distributors with worldwide shipping.

NE851M03-A is a ROHM Semiconductor transistor bjt npn for industrial electronics. It offers 2 pins, supporting reliable assembly in compact electronic equipment. From quote-based pricing, request stock for worldwide shipping.

BC550C NPN Bipolar Transistor, 100 mA, 45 V, 3-Pin SPT

Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 6.0Vebo 200mA 600Pd

Adoption of FBIT, MBIT processes; High breakdown voltage and large current capacity; High-speed switching; Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs

Bipolar Transistors - BJT NPN VHF Osc

ROHM US6X7TR is a dual NPN transistor array in a compact SOT-363 package, featuring two separate elements with a collector-emitter voltage of 12 V and a collector current of 1.5 A. With a minimum DC current gain (hFE) of 270, it is well-suited for driver and switching applications in portable and consumer electronics.

Use the download button to access the BC847A-G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the BC848BHZGT116 schematic symbol, PCB footprint, and 3D model.

These are PbFree Devices

ROHS COMPLIANT, SOT-343, 4 PIN

The MMBT3904LP-7 is a high-reliability NPN bipolar junction transistor from Diodes Inc. rated at 40 V collector-emitter voltage and 200 mA maximum collector current for general-purpose switching and amplification. It features a minimum DC current gain (hFE) of 30 and a 4 pF collector-base capacitance in a small surface-mount package. Available in stock with worldwide shipping for prototype and volume production.

Bipolar Transistors - BJT Transistor for Low Freq. Amplification

Use the download button to access the BFR380FH6327XTSA1 schematic symbol, PCB footprint, and 3D model.

MMBT4401M3T5G is an NPN bipolar junction transistor (BJT) from ON Semiconductor in a compact SOT-723 3-pin package. It features a 40 V collector-emitter voltage, 600 mA collector current, and a minimum DC current gain (hFE) of 100. Suitable for switching and amplification in space-constrained consumer electronics and signal processing circuits.

ROHM Semiconductor FMG9AT148 is a dual NPN bipolar transistor with built-in bias resistors in a compact SOT23-5 package. It features a 50 V collector-emitter voltage, 100 mA maximum collector current, and a minimum DC current gain of 30. Available from stock worldwide with fast shipping.

ROHM FMG3AT148 is a dual NPN digital transistor array in a compact 5-pin SC-74A (SOT-363) package, each element featuring a built-in base resistor network with 47 kΩ input and 47 kΩ base-emitter resistors, rated at 50 V collector-emitter voltage and 100 mA collector current. It simplifies transistor switch circuit design by eliminating external resistors in logic-level switching applications. Available in stock with global distribution.

NPN, SOT-323, 32V 0.5A, Driver Transistor

The BC847BV,115 is a Nexperia dual NPN bipolar transistor in a 6-pin SSMini (SOT666) package with 45 V collector-emitter voltage and 0.1 A maximum collector current. It features two separate transistor elements with a minimum DC current gain of 200 for signal amplification and switching. Available worldwide for compact consumer electronics and portable device designs.