2N5154RESYHRT STMicroelectronics Transistor BJT NPN (Other) In Stock
The 2N5154RESYHRT is a radiation-hardened NPN bipolar transistor rated to 80 V collector-emitter voltage and 5 A collector current in a TO-257 package. It offers a minimum DC current gain (hFE) of 40 and maximum collector-base capacitance of 250 pF for high-reliability space applications. Designed for harsh radiation environments where device longevity and electrical integrity are paramount.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- 2N5154RESYHRT Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- -65.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened construction qualified for space and high-reliability military applications requiring sustained performance under ionizing radiation
- 80 V collector-emitter breakdown voltage and 5 A collector current capacity enabling high-power switching in demanding environments
- Minimum hFE of 40 with low collector-base capacitance of 250 pF for stable, predictable gain in precision control circuits
Applications
The 2N5154RESYHRT is primarily used in space satellite power management, radiation-hardened motor drivers, and avionics power conditioning circuits where standard commercial transistors would degrade under total ionizing dose. Its 80 V, 5 A rating also suits high-reliability military power supplies, actuator drivers, and signal switching in nuclear instrumentation environments.
Specifications
| YTEOL | 4 |
| Additional Feature | HIGH RELIABILITY |
| Collector Current-Max (IC) | 5A |
| Collector-Base Capacitance-Max | 250pF |
| Collector-Emitter Voltage-Max | 80V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 40 |
| JEDEC-95 Code | TO-257 |
| JESD-30 Code | R-XSFM-P3 |
| Number of Elements | 1 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 3.3W |
| Power Dissipation-Max (Abs) | 35W |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 100K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 1300ns |
| Turn-on Time-Max (ton) | 500ns |
| VCEsat-Max | 1.5V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | France |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for 2N5154RESYHRT:
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, 3 Pin
Frequently Asked Questions
What radiation tolerance does the 2N5154RESYHRT provide for space applications?
The 2N5154RESYHRT is a radiation-hardened (rad-hard) NPN transistor designed to withstand total ionizing dose environments, maintaining its 80 V collector-emitter rating and minimum hFE of 40 in satellites, launch vehicles, and deep-space probes where commercial parts would fail from cumulative radiation exposure.
How does the 5 A collector current rating affect the 2N5154RESYHRT's suitability for power switching?
The 5 A collector current (IC-Max) rating allows the 2N5154RESYHRT to directly drive medium-power actuators, relay coils, and power converters at up to 80 V without external current boosting, making it a single-device solution for power switching stages in radiation-hardened equipment.
What package does the 2N5154RESYHRT use and how does it affect board assembly in aerospace designs?
The 2N5154RESYHRT is housed in a TO-257 (JEDEC-95) hermetic package commonly required in high-reliability aerospace and military standards such as MIL-PRF-19500, providing 3 pins and hermetically sealed construction that ensures stable 80 V, 5 A performance across -55°C to +150°C temperature extremes.
When should a designer select the 2N5154RESYHRT over a standard commercial NPN transistor?
Designers should select the 2N5154RESYHRT over commercial NPN transistors when the application demands operation in radiation environments exceeding 10 krad(Si) total dose, requires guaranteed hFE of at least 40 across temperature, or must meet high-reliability screening such as MIL-PRF-19500 Grade for satellite or avionics builds.
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