STD5N65M6 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STD5N65M6 is an N-channel 650V superjunction MDmesh M6 Power MOSFET rated at 4A with a 1.15Ω typical on-resistance in a compact DPAK (TO-252) package. From $0.80 in stock, worldwide shipping available.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE UNCONFIRMED
- Datasheet
- STD5N65M6 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650V drain-source breakdown voltage with superjunction MDmesh M6 technology for high-efficiency switching
- Low 1.15Ω typical RDS(on) at 4A drain current reduces conduction losses in power conversion stages
- DPAK (TO-252) package with built-in diode enables compact PCB layouts for AC-DC and DC-DC converters
Applications
The STD5N65M6 is designed for high-voltage switching applications including offline flyback converters, LLC resonant converters, and PFC boost stages in power adapters and industrial SMPS. Its 650V rating and superjunction MDmesh M6 technology deliver low switching losses and high efficiency at frequencies up to several hundred kilohertz. The DPAK package simplifies thermal management on compact PCBs without requiring a separate heatsink in moderate power designs.
Specifications
| Additional Feature | BULK:2500 |
| Avalanche Energy Rating (Eas) | 90mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 1.3Ω |
| FET Technology | SUPERJUNCTION MOSFET |
| Feedback Cap-Max (Crss) | 1pF |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 45W |
| Pulsed Drain Current-Max (IDM) | 16A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the STD5N65M6's RDS(on) affect efficiency in a flyback converter operating at 650V?
The STD5N65M6 has a typical RDS(on) of 1.15Ω and a maximum of 1.3Ω at 25°C, which determines conduction losses when 4A flows through the channel. In a 650V offline flyback converter, lower RDS(on) directly reduces power dissipation as I²×R heat, improving overall converter efficiency above 90% at moderate loads compared to older planar MOSFET technologies.
What avalanche energy capability does the STD5N65M6 offer for unclamped inductive switching protection?
The STD5N65M6 is rated for a single-pulse avalanche energy (Eas) of 90 mJ, providing robust protection against voltage spikes during unclamped inductive switching events. This rating ensures the device can safely absorb energy from stray inductance transients in motor drives, PFC stages, and DC-DC converters without breakdown failure.
When is STD5N65M6 a suitable alternative to a TO-220 packaged 650V MOSFET for space-limited designs?
The STD5N65M6 in DPAK (TO-252) occupies roughly 35% less board area than a standard TO-220 package while supporting the same 650V and 4A ratings. It is a direct functional substitute when PCB height is restricted below 10mm, such as in slim power adapters, enclosed industrial controls, or LED driver modules, where the TO-220 tab would violate the enclosure clearance.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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