SCTWA10N120 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics SCTWA10N120 is a 1200 V, 10 A N-channel silicon carbide (SiC) MOSFET in a through-hole TO-247 vertical package, optimized for high-efficiency power conversion. Ultra-low switching losses and high-temperature operation up to 175°C make it ideal for industrial inverters and EV charging systems. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- SCTWA10N120 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $5.9105(MOQ 1)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SCTWA10N120?
- 1200 V drain-source voltage rating with 10 A continuous drain current enables direct replacement of IGBTs in high-voltage power conversion stages
- Silicon carbide (SiC) technology reduces switching losses at high frequencies, improving efficiency in 3-phase inverters operating above 20 kHz
- TO-247 through-hole vertical package rated for junction temperatures up to 175°C supports high-power-density designs without derating at elevated ambient temperatures
What is SCTWA10N120 used for?
The SCTWA10N120 is used in solar inverters, EV on-board chargers, industrial motor drives, and UPS systems where 1200 V SiC MOSFETs replace silicon IGBTs to reduce switching losses and increase switching frequency above 20 kHz. Its 10 A continuous drain current and 1200 V blocking voltage cover the main power switch positions in single-phase and 3-phase converter topologies operating from 400 V to 800 V DC buses. The TO-247 package eases thermal management with direct heatsink mounting in high-power conversion equipment.
What are the specifications of SCTWA10N120?
| YTEOL | 3 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the SCTWA10N120 datasheet?
SCTWA10N120 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for SCTWA10N120?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage and current ratings define the SCTWA10N120 SiC MOSFET's power handling capability?
The SCTWA10N120 is rated for a 1200 V drain-source breakdown voltage and a 10 A continuous drain current, making it suitable for high-voltage power stages operating from 400 V to 800 V DC buses with sufficient derating margin. These ratings allow it to replace 1200 V silicon IGBTs in solar inverters, EV chargers, and industrial motor drives while benefiting from SiC's lower switching losses.
How does the SiC technology in the SCTWA10N120 improve converter efficiency compared to a silicon MOSFET or IGBT?
Silicon carbide technology enables the SCTWA10N120 to switch at frequencies above 20 kHz with significantly lower switching losses than equivalent silicon MOSFETs or IGBTs rated at 1200 V. The wider bandgap of SiC also allows junction temperature operation up to 175°C, reducing heatsink size and enabling higher power density. These properties translate to smaller passive components and higher overall system efficiency in PWM converters.
Why is the TO-247 through-hole vertical package advantageous for high-power inverter designs using the SCTWA10N120?
The TO-247 vertical package allows direct bolting to a heatsink or cold plate, providing a low thermal resistance path from the 175°C-rated junction to the ambient environment. This simplifies thermal management in 3-phase inverters and EV charging modules where each switch dissipates tens of watts continuously. The through-hole leads also provide robust mechanical attachment, resisting vibration in automotive and industrial environments.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.6800 | $9.68 |
| 10+ | $6.9800 | $69.80 |
| 100+ | $6.3800 | $638.00 |
| 120+ | $6.0515 | $726.18 |
| 270+ | $5.9712 | $1612.22 |
| 1200+ | $5.9105 | $7092.60 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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