STRH100N6HYG STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STRH100N6HYG is a radiation-hardened N-channel power MOSFET rated at 60 V and 40 A, featuring 24 mΩ on-resistance and 954 mJ avalanche energy rating for space and hi-rel applications. Built-in diode and fast switching make it ideal for satellite power conversion and rad-hard motor drives.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH100N6HYG Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STRH100N6HYG?
- Radiation-hardened design qualified for space and hi-rel environments
- 60 V / 40 A capability with only 24 mΩ Rds(on) for efficient power switching
- 954 mJ avalanche energy rating for robust unclamped inductive switching
- Built-in body diode for synchronous rectification without external components
- Fast switching with 470 pF Crss for high-frequency power conversion
What is STRH100N6HYG used for?
The STRH100N6HYG is designed for satellite power conditioning units, spacecraft DC-DC converters, and hi-rel motor controllers that must survive total ionizing dose radiation. Its 60 V breakdown and 40 A continuous drain current cover regulated bus switching and brushless motor drives in space platforms. Ground-based nuclear instrumentation and high-altitude avionics also benefit from its radiation-tolerant MOSFET design.
What are the specifications of STRH100N6HYG?
| YTEOL | 5.15 |
| Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) | 954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 40A |
| Drain-source On Resistance-Max | 0.024Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 470pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 176W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 50K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 280ns |
| Turn-on Time-Max (ton) | 300ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Where can I find the STRH100N6HYG datasheet?
STRH100N6HYG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STRH100N6HYG?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What avalanche energy can the STRH100N6HYG withstand during unclamped inductive switching?
The STRH100N6HYG is rated for a single-pulse avalanche energy (Eas) of 954 mJ, giving it exceptional ruggedness against inductive load transients in radiation-hardened DC-DC converters and space-grade motor drive applications operating up to 60 V.
How does STRH100N6HYG's on-resistance affect efficiency in a satellite 28 V bus converter?
With a maximum Rds(on) of 24 mΩ at 40 A, the STRH100N6HYG dissipates approximately 38 mW per amp of conduction loss on a 28 V satellite bus, enabling high conversion efficiency in space power regulation where thermal management is critical.
Which radiation environments is the STRH100N6HYG qualified for?
The STRH100N6HYG is a rad-hard MOSFET qualified for total ionizing dose environments encountered in low-earth orbit and beyond. Its TO-254AA package and 60 V / 40 A ratings make it a direct choice for ESA- and NASA-grade power management in satellite and spacecraft power buses.
Can the STRH100N6HYG replace a standard 60 V MOSFET in a motor controller for aerospace use?
Yes, the STRH100N6HYG is a plug-in radiation-tolerant alternative to commercial 60 V N-channel MOSFETs, adding hi-rel qualification while maintaining 40 A continuous drain current and 24 mΩ Rds(on). Its fast-switching characteristic and built-in diode reduce external component count in the aerospace motor drive bridge.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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