PDTC123ET Nexperia Transistor BJT NPN (SOT23 (3-Pin)) In Stock
Nexperia PDTC123ET is a digital NPN transistor in SOT-23 (TO-236AB) with built-in 2.2 kΩ base bias resistors (R1:R2 ratio of 1) rated at 100 mA collector current and 50 V VCEo. Minimum hFE of 30 suits direct MCU GPIO switching without external resistors. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Nexperia
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- PDTC123ET Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- -65.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Built-in 2.2 kΩ base bias resistors with 1:1 R1:R2 ratio eliminating external base-emitter resistors and simplifying PCB layout
- 100 mA maximum collector current and 50 V VCE rating covering a wide range of LED, relay, and small-load switching applications
- SOT-23 (TO-236AB) 3-pin package enabling very compact digital switching circuits with minimum hFE of 30 for reliable saturation from 3.3 V and 5 V logic
Applications
The PDTC123ET is designed for direct microcontroller GPIO-driven switching of small loads such as LEDs, optocouplers, relay coils, and logic-level signal conditioning. Its built-in 2.2 kΩ resistors make it a drop-in solution for replacing discrete NPN transistor plus resistor combinations in consumer electronics, IoT devices, and automotive auxiliary control circuits.
Specifications
| Date Of Intro | 1997-12-15 |
| YTEOL | 7 |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Collector Current-Max (IC) | 0.1A |
| Collector-Emitter Voltage-Max | 50V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| DC Current Gain-Min (hFE) | 30 |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Surface Mount | YES |
| Terminal Finish | TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China, Malaysia |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What built-in resistor values does the PDTC123ET include, and how do they simplify driving it from a 3.3 V MCU GPIO?
The PDTC123ET integrates a 2.2 kΩ base resistor and a 2.2 kΩ base-emitter resistor (R1:R2 ratio of 1). When driven from a 3.3 V GPIO, the base current is approximately (3.3 V - 0.7 V) / 2.2 kΩ = 1.18 mA, with sufficient hFE of 30 to saturate the transistor at collector currents up to approximately 35 mA, covering most LED and optocoupler switching needs without any additional discrete components.
For a small relay coil switching application at 50 mA, how does PDTC123ET's 100 mA rating provide headroom?
With a 100 mA maximum collector current rating and 50 V VCEo, the PDTC123ET provides a 2x current safety margin over a 50 mA relay coil load. The 50 V breakdown voltage also safely handles coil flyback spikes when used with an external flyback diode, making it a reliable choice for 5 V and 12 V relay switching applications in industrial and consumer equipment.
How does the SOT-23 package of the PDTC123ET compare to using a discrete NPN transistor plus two resistors on a PCB?
Replacing a discrete NPN in SOT-23 plus two 0402 resistors with the PDTC123ET consolidates 3 components into 1 SOT-23 package. This reduces BOM line items by 2, saves approximately 2 mm² of PCB area per switching stage, and eliminates the risk of incorrect resistor value selection. For designs with dozens of GPIO-driven switches, the PDTC123ET significantly reduces assembly complexity and placement time.
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