MMBT4401M3T5G ON Semiconductor Transistor BJT NPN (Other) In Stock
MMBT4401M3T5G is an NPN bipolar junction transistor (BJT) from ON Semiconductor in a compact SOT-723 3-pin package. It features a 40 V collector-emitter voltage, 600 mA collector current, and a minimum DC current gain (hFE) of 100. Suitable for switching and amplification in space-constrained consumer electronics and signal processing circuits.
- Manufacturer
- ON Semiconductor
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- MMBT4401M3T5G Datasheet PDF
- Category
- Transistor BJT NPN
- Price
- From $0.0441(MOQ 50)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of MMBT4401M3T5G?
- 40 V collector-emitter breakdown voltage (VCEO) enabling reliable switching in medium-voltage circuits
- 600 mA maximum collector current (IC) supporting moderate-power load switching applications
- Minimum DC current gain (hFE) of 100 for high-efficiency small-signal amplification
- Ultra-compact SOT-723 3-pin package ideal for high-density PCB designs in portable and consumer electronics
What is MMBT4401M3T5G used for?
The MMBT4401M3T5G is widely used in small-signal switching, general-purpose amplification, and low-side load switching circuits where a 40 V, 600 mA NPN transistor is required. Its compact SOT-723 footprint makes it ideal for mobile devices, portable instruments, and consumer electronics PCBs where board space is limited. It is also suitable for level-shifting and signal inversion circuits leveraging its hFE of 100 minimum and low collector-base capacitance of 6.5 pF.
What are the specifications of MMBT4401M3T5G?
| Pbfree Code | Yes |
| Manufacturer Package Code | 631AA |
| YTEOL | 0 |
| Collector Current-Max (IC) | 0.6A |
| Collector-Base Capacitance-Max | 6.5pF |
| Collector-Emitter Voltage-Max | 40V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 100 |
| JESD-30 Code | R-PDSO-F3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 0.64W |
| Power Dissipation-Max (Abs) | 0.64W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 250MHz |
| Turn-off Time-Max (toff) | 255ns |
| Turn-on Time-Max (ton) | 35ns |
| VCEsat-Max | 0.75V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.21.00.75 |
| Country of Origin | Mainland China |
Where can I find the MMBT4401M3T5G datasheet?
MMBT4401M3T5G Datasheet DownloadOfficial datasheet from ON Semiconductor
What are equivalent replacements for MMBT4401M3T5G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the MMBT4401M3T5G for selecting it in a switching circuit?
The MMBT4401M3T5G is rated for 40 V collector-emitter voltage (VCEO), 600 mA maximum collector current (IC), and has a minimum DC current gain (hFE) of 100. Its collector-base capacitance is 6.5 pF, making it suitable for fast switching and small-signal amplification in low-power circuits up to 40 V.
How does the SOT-723 package of the MMBT4401M3T5G compare to other transistor packages for high-density PCB layouts?
The SOT-723 is one of the smallest 3-pin transistor packages available, enabling very high component density on PCBs. At a fraction of the footprint of SOT-23, the MMBT4401M3T5G in SOT-723 is ideal for portable devices, wearables, and compact consumer electronics requiring a 40 V NPN BJT with 600 mA current handling within minimum board area.
Which applications are best matched to the MMBT4401M3T5G given its 600 mA and 40 V ratings?
The MMBT4401M3T5G suits LED driver circuits, relay switching, signal inversion, and low-side load switching up to 600 mA and 40 V. Its hFE of 100 minimum allows low base-drive current, making it efficient in microcontroller I/O-driven switch circuits, battery-powered consumer electronics, and portable sensor signal conditioning stages.
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Why Buy from FindMyChip
About ON Semiconductor
ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 50+ | $0.1625 | $8.13 |
| 100+ | $0.1080 | $10.80 |
| 250+ | $0.0458 | $11.45 |
| 100000+ | $0.0441 | $4410.00 |
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