MMBT4401M3T5G ON Semiconductor Transistor BJT NPN (Other) In Stock
MMBT4401M3T5G is an NPN bipolar junction transistor (BJT) from ON Semiconductor in a compact SOT-723 3-pin package. It features a 40 V collector-emitter voltage, 600 mA collector current, and a minimum DC current gain (hFE) of 100. Suitable for switching and amplification in space-constrained consumer electronics and signal processing circuits.
- Manufacturer
- ON Semiconductor
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- MMBT4401M3T5G Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 40 V collector-emitter breakdown voltage (VCEO) enabling reliable switching in medium-voltage circuits
- 600 mA maximum collector current (IC) supporting moderate-power load switching applications
- Minimum DC current gain (hFE) of 100 for high-efficiency small-signal amplification
- Ultra-compact SOT-723 3-pin package ideal for high-density PCB designs in portable and consumer electronics
Applications
The MMBT4401M3T5G is widely used in small-signal switching, general-purpose amplification, and low-side load switching circuits where a 40 V, 600 mA NPN transistor is required. Its compact SOT-723 footprint makes it ideal for mobile devices, portable instruments, and consumer electronics PCBs where board space is limited. It is also suitable for level-shifting and signal inversion circuits leveraging its hFE of 100 minimum and low collector-base capacitance of 6.5 pF.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | 631AA |
| YTEOL | 0 |
| Collector Current-Max (IC) | 0.6A |
| Collector-Base Capacitance-Max | 6.5pF |
| Collector-Emitter Voltage-Max | 40V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 100 |
| JESD-30 Code | R-PDSO-F3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 0.64W |
| Power Dissipation-Max (Abs) | 0.64W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 250MHz |
| Turn-off Time-Max (toff) | 255ns |
| Turn-on Time-Max (ton) | 35ns |
| VCEsat-Max | 0.75V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.21.00.75 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the MMBT4401M3T5G for selecting it in a switching circuit?
The MMBT4401M3T5G is rated for 40 V collector-emitter voltage (VCEO), 600 mA maximum collector current (IC), and has a minimum DC current gain (hFE) of 100. Its collector-base capacitance is 6.5 pF, making it suitable for fast switching and small-signal amplification in low-power circuits up to 40 V.
How does the SOT-723 package of the MMBT4401M3T5G compare to other transistor packages for high-density PCB layouts?
The SOT-723 is one of the smallest 3-pin transistor packages available, enabling very high component density on PCBs. At a fraction of the footprint of SOT-23, the MMBT4401M3T5G in SOT-723 is ideal for portable devices, wearables, and compact consumer electronics requiring a 40 V NPN BJT with 600 mA current handling within minimum board area.
Which applications are best matched to the MMBT4401M3T5G given its 600 mA and 40 V ratings?
The MMBT4401M3T5G suits LED driver circuits, relay switching, signal inversion, and low-side load switching up to 600 mA and 40 V. Its hFE of 100 minimum allows low base-drive current, making it efficient in microcontroller I/O-driven switch circuits, battery-powered consumer electronics, and portable sensor signal conditioning stages.
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