Transistor BJT NPN

TO-92, 3 PIN

BC546BRL1G is a 3PIN 0.1A capacitor by ON Semiconductor. Key specs: 3PIN, 0.1A, 4.5pF. From quote-based pricing, in stock with worldwide shipping for production sourcing.

PMMT491A, NPN Bipolar Transistor, 1 A 40 V HFE:200 150 MHz Small Signal, 3-Pin TO-236AB

PMBT4403, NPN Bipolar Transistor, 0.6 A 40 V HFE:20 200 MHz Small Signal, 3-Pin TO-236AB

PMBT2369, NPN Bipolar Transistor, 0.2 A 15 V HFE:20 500 MHz Small Signal, 3-Pin TO-236AB

PMBT4401, NPN Bipolar Transistor, 0.6 A 40 V HFE:20 250 MHz Small Signal, 3-Pin TO-236AB

Use the download button to access the PMBTA42 schematic symbol, PCB footprint, and 3D model.

Nexperia PDTC123ET is a digital NPN transistor in SOT-23 (TO-236AB) with built-in 2.2 kΩ base bias resistors (R1:R2 ratio of 1) rated at 100 mA collector current and 50 V VCEo. Minimum hFE of 30 suits direct MCU GPIO switching without external resistors. Available from authorized distributors with worldwide shipping.

NE851M03-A is a ROHM Semiconductor transistor bjt npn for industrial electronics. It offers 2 pins, supporting reliable assembly in compact electronic equipment. From quote-based pricing, request stock for worldwide shipping.

BC550C NPN Bipolar Transistor, 100 mA, 45 V, 3-Pin SPT

Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 6.0Vebo 200mA 600Pd

Adoption of FBIT, MBIT processes; High breakdown voltage and large current capacity; High-speed switching; Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs

Bipolar Transistors - BJT NPN VHF Osc

ROHM US6X7TR is a dual NPN transistor array in a compact SOT-363 package, featuring two separate elements with a collector-emitter voltage of 12 V and a collector current of 1.5 A. With a minimum DC current gain (hFE) of 270, it is well-suited for driver and switching applications in portable and consumer electronics.

Use the download button to access the BC847A-G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the BC848BHZGT116 schematic symbol, PCB footprint, and 3D model.

These are PbFree Devices

ROHS COMPLIANT, SOT-343, 4 PIN

The MMBT3904LP-7 is a high-reliability NPN bipolar junction transistor from Diodes Inc. rated at 40 V collector-emitter voltage and 200 mA maximum collector current for general-purpose switching and amplification. It features a minimum DC current gain (hFE) of 30 and a 4 pF collector-base capacitance in a small surface-mount package. Available in stock with worldwide shipping for prototype and volume production.

Bipolar Transistors - BJT Transistor for Low Freq. Amplification

Use the download button to access the BFR380FH6327XTSA1 schematic symbol, PCB footprint, and 3D model.

MMBT4401M3T5G is an NPN bipolar junction transistor (BJT) from ON Semiconductor in a compact SOT-723 3-pin package. It features a 40 V collector-emitter voltage, 600 mA collector current, and a minimum DC current gain (hFE) of 100. Suitable for switching and amplification in space-constrained consumer electronics and signal processing circuits.

ROHM Semiconductor FMG9AT148 is a dual NPN bipolar transistor with built-in bias resistors in a compact SOT23-5 package. It features a 50 V collector-emitter voltage, 100 mA maximum collector current, and a minimum DC current gain of 30. Available from stock worldwide with fast shipping.

ROHM FMG3AT148 is a dual NPN digital transistor array in a compact 5-pin SC-74A (SOT-363) package, each element featuring a built-in base resistor network with 47 kΩ input and 47 kΩ base-emitter resistors, rated at 50 V collector-emitter voltage and 100 mA collector current. It simplifies transistor switch circuit design by eliminating external resistors in logic-level switching applications. Available in stock with global distribution.

NPN, SOT-323, 32V 0.5A, Driver Transistor

The BC847BV,115 is a Nexperia dual NPN bipolar transistor in a 6-pin SSMini (SOT666) package with 45 V collector-emitter voltage and 0.1 A maximum collector current. It features two separate transistor elements with a minimum DC current gain of 200 for signal amplification and switching. Available worldwide for compact consumer electronics and portable device designs.

ROHM QS5W2TR is a dual NPN bipolar junction transistor in a compact TSMT5 5-pin package, rated at 50 V collector-emitter voltage and 3 A collector current with a minimum hFE of 180. Ideal for low-side switching and driver applications. Available in stock with worldwide shipping.

Diodes Inc. FCX491ATA is a single NPN bipolar junction transistor rated at 1 A collector current and 40 V collector-emitter voltage in a compact 4-pin SOT-89 package. With a minimum DC current gain (hFE) of 35, it delivers efficient switching and amplification in power management circuits. Available from authorized distributors with worldwide shipping.

Infineon BFR 181W H6327 is an NPN RF bipolar transistor rated at 20 mA collector current and 12 V collector-emitter voltage in a compact 3-pin SOT-323 package optimized for low-noise, high-frequency amplifier applications. High transition frequency enables gain stages in VHF and UHF bands. Available worldwide from authorized distributors with competitive pricing.

Diodes Inc. FMMTA42TA is a Transistor BJT NPN for switching, amplification, level-shifting, and driver circuits. It offers 3 pins, 3 PIN in SOT23 (3-Pin). From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

BC548C A1 from Taiwan Semiconductor is a transistor for switching, amplification, and driver stages. Key specs include 3 pins, standard transistor package, and Bipolar Transistors - BJT NPN Transistor. From quote pricing, in-stock sourcing support.

Collector Dissipation : PC = 625mW Amplifier Transistor; Collector-Emitter Voltage : VCEO= KSP43: 200V; Collector-Emitter Voltage : VCEO= KSP42: 300V

The 2N5154RESYHRT is a radiation-hardened NPN bipolar transistor rated to 80 V collector-emitter voltage and 5 A collector current in a TO-257 package. It offers a minimum DC current gain (hFE) of 40 and maximum collector-base capacitance of 250 pF for high-reliability space applications. Designed for harsh radiation environments where device longevity and electrical integrity are paramount.

STMicroelectronics 2N5154ESYHRT is a radiation-hardened NPN bipolar transistor rated at 80 V collector-emitter voltage and 5 A collector current, designed for high-reliability space and aerospace switching and amplification applications.

2N5154ESY1 is a radiation-hardened NPN bipolar transistor rated for 80 V collector-emitter voltage and 5 A collector current in a hermetic TO-257 package. Designed for high-reliability space and military applications, it delivers stable DC current gain of 40 minimum under total ionizing dose environments.

The 2N5154RESYHRG is a radiation-hardened NPN bipolar transistor from STMicroelectronics, rated at 80 V collector-emitter voltage and 5 A collector current. Designed for high-reliability space and military applications, it features a single-transistor configuration in a TO-257 hermetic package with DC current gain (hFE) of 40 minimum.

High voltage fast-switching NPN power transistor

Use the download button to access the 2N3501 schematic symbol and PCB footprint.

TO-39, 3 PIN

Bipolar Transistors - BJT NPN Transistor

Bipolar (BJT) Transistor NPN 30 V 100 mA 300 mW Through Hole TO-18 (TO-206AA)

Bipolar Transistors - BJT 15V 200mA 680mW NPN Small-Signal BJT THT

PNP TRANSISTOR

Bipolar Transistors - BJT Power BJT

Bipolar (BJT) Transistor NPN 80 V 1 A - 800 mW Through Hole TO-39 (TO-205AD)

Trans GP BJT NPN 50V 0.8A 500mW 4-Pin UA Waffle

Bipolar (BJT) Transistor NPN 50 V 800 mA - 800 mW Through Hole TO-39

Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Bag

Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle

NPN-SWITCHING SILICON TRANSISTOR IE=10mAdc, V(BR)CEO=50Vdc, -55to+200°C.